Untitled
Abstract: No abstract text available
Text: B A N D S W I T C H I N G & VA R I - C A P D I O D E S HIGH FREQUENCY BAND SWITCHING DIODES Type Reverse Voltage max Volts SOD123 PACKAGE BA782 35 BA783 35 SOD323 PACKAGE BA782S 35 BA783S 35 Forward Forward Current Voltage at Drop Ta = 25˚C at IF = 100mA
|
Original
|
100mA
OD123
BA782
BA783
OD323
BA782S
BA783S
availab30
BB721
BB729
|
PDF
|
VN0540
Abstract: No abstract text available
Text: VN0540 E – ET L O S B O – VN0535 VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 350V 35Ω 250mA VN0535N2 VN0535N3 VN0535ND 400V 35Ω 250mA —
|
Original
|
VN0540
VN0535
VN0540
250mA
250mA
VN0535N2
VN0535N3
VN0540N3
VN0535ND
VN0540ND
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
11-Mar-11
|
PDF
|
Si7613DN-T1-GE3
Abstract: TB-17 si7613
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
18-Jul-08
TB-17
si7613
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+ 105° case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
FC04-035
|
PDF
|
MGDT35HCF
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
MGDT35HCF
|
PDF
|
MGDT35HCF
Abstract: FC045 MGDB-35-H-F MIL-STD-810D 516.3 MGDT-35-H-CE MGDB-35 MGDS-35-H-F mgdm-35 MGDS-35-H
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
MGDT35HCF
FC045
MGDB-35-H-F
MIL-STD-810D 516.3
MGDT-35-H-CE
MGDB-35
MGDS-35-H-F
MGDS-35-H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
FC04-035
|
PDF
|
rU51
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
rU51
|
PDF
|
FGDS-2A-50V
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
FGDS-2A-50V
|
PDF
|
|
|
MGDB-35-H-F
Abstract: No abstract text available
Text: Hi-Rel DC/DC CONVERTER MGDM-35 : 35W POWER Hi-RelHi-Rel GradeGrade 4:1 Wide Input Single, Bi & Triple Outputs Metallic Case - 1 500 VDC Isolation • 28Vdc input compliant with MIL-STD-740A/D/E/F • Nominal power up to 35 W • Wide temperature range : -40°C/+105°C case
|
Original
|
MGDM-35
28Vdc
MIL-STD-740A/D/E/F
MGDM-35
MGDB-35-H-F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S T S 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID 20V 6A S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max 35 @ V G S = 4.5V
|
Original
|
2300S
OT-23
OT-23
|
PDF
|
2300SA
Abstract: No abstract text available
Text: S T S 2300S S amHop Microelectronics C orp. S ep. 8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID 20V 6A R DS ON S uper high dense cell design for low R DS (ON). ( m W ) Max 35 @ V G S = 4.5V R ugged and reliable.
|
Original
|
2300S
OT-23
OT-23
2300SA
|
PDF
|
GE SCR 241
Abstract: C141C C144 2N3658 C141A 2N3649-53 C141D C144S C34B C34D
Text: INVERTER SGR’s MEDIUM CURRENT 25 TO 35 AMPERES C138 1 C 139 C144 GE TYPE C34 C140 C141 JE D E C — 2N 3649-53 2 N 3654-58 50-500 50-400 5 0-40 0 500-800 500*800 500-1000 25 35 35 35 35 35 1 KHz 25 26 26 26 26 35 5KHz . 26 26 22 22 32 18 30 — — —
|
OCR Scan
|
2N3649-53
2N3654-58
10KHz
C140F
2N3649
C141F
2N3654
C140A
2N3650
C141A
GE SCR 241
C141C
C144
2N3658
C141D
C144S
C34B
C34D
|
PDF
|
GE c35d
Abstract: GE c35s c35f C38F c35e C35M 2N682 2N683 C35U c231
Text: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS
|
OCR Scan
|
c230-2
c231-3
c228-9
2n3870-3
2n5204-7
ENT11
GE c35d
GE c35s
c35f
C38F
c35e
C35M
2N682
2N683
C35U
c231
|
PDF
|
HARRIS / HA1
Abstract: HA-5222 A5E8
Text: - 128 - HA-5222 HARRIS M S E E : 0 . 3mVtyp • A Vs=±15V 4nV /VH z tx / v - w — H A -5 2 2 2 -9 • ft Ta=25°C 35 35 V A / / V H S ilA ^ f f l 5 5 V ft ft ft -9:-40—-85, -5:0—^+75 -9:-40— 85.-5:0^75 V / / mW j J l E • t i S * f l i ^ : + 56nA
|
OCR Scan
|
-HA-5222
HA-5222â
AtlM77M.
HA7-5222
CL-50pF
40DkHz
100mV,
HARRIS / HA1
HA-5222
A5E8
|
PDF
|
CY7C182
Abstract: No abstract text available
Text: CYPRESS SE MI CON DUCTOR 4fc,E D E3 2 5 0 ^ 2 D00bS7S 3 ESCYP CY7C182 CYPRESS SEMICONDUCTOR Features Functional Description • Fast access time — Commercial: 25/35/45 us max. — Military! 35/45/55 ns (max.) • Low power consumption — Active: 770 m ff (max.)
|
OCR Scan
|
CY7C182
300-mil-widih
CY7C182
CY7C182,
CY7C182-12DC
CY7C182-12PC
CY7C182-
CY7C182-12DMB
CY7C182-12LMB
CY7C182â
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ill h a r fr is W DG411, DG412 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches November 1994 Description Features • ON-Resistance <35£l Max • Low Power Consumption P0 <35|iW • Fast Switching Action • ton <175ns ■ tgpp <145ns
|
OCR Scan
|
DG411,
DG412
175ns
145ns
175ns)
DG211
DG212.
DG211/DG212
DG411
M3DSE71
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAT18 y v SILICON PLANAR DIODE Band switching diode in a microminiature plastic envelope. Intended for thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Forward current d.c. Junction temperature Vr max. 35 V •f
|
OCR Scan
|
BAT18
OT-23.
7ZO0998
7Z08997
|
PDF
|
6 volt npn
Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
Text: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100
|
OCR Scan
|
2N2218/21
2N2218A/21A
2N2219/22
2N2219A/22A
DN2219A/22A
150mA
100KHz
100MH;
100mA
100mA
6 volt npn
DP2907A
transistor 60 volt
npn transistor 60 volt
DN2219A
geometry 450
|
PDF
|
