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    348 MOSFET Search Results

    348 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    348 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LE334

    Abstract: VEA335
    Text: T±0.5 Customer Trust Company H±0.5 W±0.5 30min. F±1.0 φ d±0.05 フィルムコンデンサ FILM CAPACITORS QMS EMS JIS Q 9001 JIS Q 14001 JSAQ 026 JSAE 348 Customer Trust Company 顧客に安心 そして信頼いただける企業実現をめざして


    Original     		PDF 30min. 0274N1505-2 LE334 VEA335

    IRFP260 equivalent

    Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
    Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200


    Original     		PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    diode 348

    Abstract: 9840 diode APT50M50L2LL 085mh
    Text: APT50M50L2LL 500V 87A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M50L2LL O-264 O-264 diode 348 9840 diode APT50M50L2LL 085mh

    BQFN REEL TEXAS

    Abstract: TPS84610
    Text: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design


    Original     		PDF TPS84610 EN55022 BQFN REEL TEXAS TPS84610

    APTM120H29FG

    Abstract: APT0502 APT0601
    Text: APTM120H29FG Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application VB US • • • • Q3 Features S3 Q2 Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 • Power MOS 7 FREDFETs


    Original     		PDF APTM120H29FG APTM120H29FG­ APTM120H29FG APT0502 APT0601

    APT0501

    Abstract: APT0502 APTM120DU29TG APT0406
    Text: APTM120DU29TG Dual Common Source MOSFET Power Module Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package


    Original     		PDF APTM120DU29TG APTM120DU29TG­ APT0501 APT0502 APTM120DU29TG APT0406

    Untitled

    Abstract: No abstract text available
    Text: APTM120DU29TG Dual Common Source MOSFET Power Module D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D2 Q1 Q2 G1 G2 S1 S2 S NTC1 NTC2 G2 S2 D1 S VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C


    Original     		PDF APTM120DU29TG APTM120DU29TGâ

    Untitled

    Abstract: No abstract text available
    Text: APTM120H29FG Full - Bridge MOSFET Power Module VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application VB US • • • • Q3 Q1 S1 OUT2 G3 OUT1 G1 S3 Q2 Features Q4 • G2 G4 S2 S4 0/VBUS • • OUT1 G1 VBUS G2 0/VBUS Welding converters


    Original     		PDF APTM120H29FG APTM120H29FGâ

    Untitled

    Abstract: No abstract text available
    Text: LMZ30606 www.ti.com SNVS995 – JULY 2013 6A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30606 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design


    Original     		PDF LMZ30606 SNVS995 LMZ30602 LMZ30604

    Untitled

    Abstract: No abstract text available
    Text: LMZ30604 www.ti.com SNVS998 – JULY 2013 4A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30604 FEATURES DESCRIPTION • The LMZ30604 SIMPLE SWITCHER® power module is an easy-to-use integrated power solution that


    Original     		PDF LMZ30604 SNVS998 LMZ30604

    TPS84610

    Abstract: No abstract text available
    Text: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows


    Original     		PDF TPS84610 EN55022 TPS84610

    Untitled

    Abstract: No abstract text available
    Text: LMZ30606 www.ti.com SNVS995 – JULY 2013 6A SIMPLE SWITCHER Power Module with 2.95V-6V Input in QFN Package Check for Samples: LMZ30606 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows Small Footprint, Low-Profile Design


    Original     		PDF LMZ30606 SNVS995 LMZ30602 LMZ30604

    Untitled

    Abstract: No abstract text available
    Text: APTM120DA29TG Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction NTC2 VBUS VBUS SENSE CR1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM120DA29TG APTM120DA29TGâ

    ELECTROLYTIC CAPACITORS 220uF 25V

    Abstract: electrolytic capacitor 2200uF SANYO
    Text: TPS84410 www.ti.com SLVSAR5A – SEPTEMBER 2011 – REVISED MARCH 2012 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter


    Original     		PDF TPS84410 EN55022 ELECTROLYTIC CAPACITORS 220uF 25V electrolytic capacitor 2200uF SANYO

    TPS84610

    Abstract: No abstract text available
    Text: TPS84610 SLVSAZ4 – OCTOBER 2011 www.ti.com 2.95-V to 6-V Input, 6-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84610 FEATURES 1 • 2 • • • • • • • • • • • • • • Complete Integrated Power Solution Allows


    Original     		PDF TPS84610 EN55022 TPS84610

    Untitled

    Abstract: No abstract text available
    Text: TPS84410 www.ti.com SLVSAR5A – SEPTEMBER 2011 – REVISED MARCH 2012 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter


    Original     		PDF TPS84410 EN55022

    Untitled

    Abstract: No abstract text available
    Text: TPS84410 SLVSAR5 – SEPTEMBER 2011 www.ti.com 2.95-V to 6-V Input, 4-A Synchronous Buck, Integrated Power Solution Check for Samples: TPS84410 FEATURES DESCRIPTION • The TPS84410RKG is an easy-to-use integrated power solution that combines a 4-A DC/DC converter


    Original     		PDF TPS84410 TPS84410RKG

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		PDF IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		PDF IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan     		PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


    OCR Scan     		PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent