marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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IRF5505
Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT
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TEST10
TEST11
CS8406
RA300
RA302
1/16W
IRF5505
C3427
SN7002DW
LD1807
343S0284
apple AirPort Extreme
h11m
r3361
HC17051
1n914 onsemi
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SMC1602
Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3
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CS8406
RA300
RA302
1/16W
SMC1602
SN7002DW
c3231
Q2576
r2561
C3239
C3303
C2651
C5060
U4900
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1PS74SB43
Abstract: sod87 Melf 1PS75SB45 1PS59SB20 1PS76SB21 1PS59SB10 1PS76SB17 1PS59SB21 1PS79SB62 BAS70
Text: Semiconductors Date of release: February 2005 Schottky barrier diodes portfolio General purpose Schottky barrier diodes 100 25 SOD80C SOD68 SOT346 MiniMelf (DO-34) (SC-59) SOT23 Surface Leaded glass Plastic SMD Plastic SMD Plastic SMD Plastic flat lead 260
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OD80C
SC-59)
OD323
SC-88)
SC-76)
BAT760
BAT960
1PS79SB10
BAT54L
BAT754
1PS74SB43
sod87 Melf
1PS75SB45
1PS59SB20
1PS76SB21
1PS59SB10
1PS76SB17
1PS59SB21
1PS79SB62
BAS70
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Untitled
Abstract: No abstract text available
Text: FMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology
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FMM5317ZW
SC-70
OT363
FMM5317ZW
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label infineon barcode
Abstract: barcode label infineon E6327 SC-75
Text: Package Information Tape and Reel DIN IEC 286-3 34 5 Please consult your nearest Infineon sales offices (see list of addresses) if you have any queries relating to additional dimensions, dimensional tolerances or variations. 345 Data Book 1 2000-09-01 Package Information
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CPWG9321
MW-12
CPWG5900
MW-16
CPWG9093
label infineon barcode
barcode label infineon
E6327
SC-75
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AN01
Abstract: wireless switch transmit receive sc70 marking 06 rf
Text: FMM5317ZW Single Pole Double Throw Switch Wireless LAN / WiMAX Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: +34 dBm Typ Low Insertion Loss: 0.55 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology
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FMM5317ZW
SC-70
OT363
FMM5317ZW
AN01
wireless switch transmit receive
sc70 marking 06 rf
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design ideas
Abstract: sod110 land BP317 SC-89
Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210
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MGR615
MGR613
SC-89
EIA-RS481A
design ideas
sod110 land
BP317
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xg1015-SE
Abstract: XG1015-SE-0G00 XG1015-SE LNA G1015-SE XG1015-SE-0G0T XG1015 NF50 G1015S
Text: 0.1-3.5 GHz GaAs pHEMT Current Adjustable, Low Noise Amplifier G1015-SE January 2010 - Rev 06-Jan-10 Features Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure, NF < 1 dB High Linearity, OIP3 > 34 dBm @ 2 GHz
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G1015-SE
06-Jan-10
OT-363
XG1015-SE
XG1015-SE-0G00
XG1015-SE LNA
G1015-SE
XG1015-SE-0G0T
XG1015
NF50
G1015S
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/EMM5327ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology
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ES/EMM5327ZW
SC-70
OT363
ES/EMM5327ZW
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wireless on off switch
Abstract: No abstract text available
Text: Preliminary ES/EMM5317ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology
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ES/EMM5317ZW
SC-70
OT363
ES/EMM5317ZW
wireless on off switch
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wireless switch diagram
Abstract: wireless on off switch
Text: Preliminary ES/EMM5327ZW Single Pole Double Throw Switch 2.4 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • • • High Input P0.1dB: 34 dBm Typ Low Insertion Loss: 0.45 dB Typ at 2.4 GHz High Isolation: 25 dB Typ at 2.4 GHz GaAs PHEMT technology
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ES/EMM5327ZW
SC-70
OT363
ES/EMM5327ZW
wireless switch diagram
wireless on off switch
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Untitled
Abstract: No abstract text available
Text: Preliminary ES/FMM5320ZW Single-Pole Double-Throw Switch GaAs PHEMT High Power Switch DC - 2.0 GHz FEATURES • • • • • • Low Insertion Loss: 0.45 dB at 2GHz Low voltage operation: 2.5 V Low Harmonics: -70 dBc at +34 dBm High Isolation: 20 dB at 2 GHz
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ES/FMM5320ZW
SC-70
ES/FMM5320ZW
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Untitled
Abstract: No abstract text available
Text: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features • Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz
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MAAL-010704
MAAL-010704
OT-363
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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M72-DVT
03/0m72
r4363
L9141
NTC 16D-7
MXM pinout
C4253
PP2102
d7810
imac MLB
ntc 10d-7
PP1013
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
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MAAL-010704
Abstract: MAAL-010704-001SMB M513 NF50 R110 maal0107
Text: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features • Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz
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MAAL-010704
MAAL-010704
OT-363
MAAL-010704-001SMB
M513
NF50
R110
maal0107
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marking g2u
Abstract: SW sot-363
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
UPG2009TB-E3
marking g2u
SW sot-363
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SOT128
Abstract: transistor 115 BZA100 delta pinning SC-75 SC-76 SC-89 SO20 13 53 111
Text: Philips Semiconductors Small-signal Transistors and Diodes PACKAGE PRODUCTS SC-59 SOT346 Diodes and Transistors SOD68 (DO-34) 115 8 mm tape and reel, T1 180/7 125 8 mm tape and reel, T2 180/7 Diodes and Transistors 10000 135 8 mm tape and reel, T1 286/111⁄4
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SC-59
OT346)
SC-89
OT490)
OT223
OT323
SC-70)
OT363
SC-88)
OT416
SOT128
transistor 115
BZA100
delta pinning
SC-75
SC-76
SC-89
SO20
13 53 111
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
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Untitled
Abstract: No abstract text available
Text: MAAL-010704 Low Noise Amplifier 0.1-3.5 GHz Features • Single Voltage Supply 3V ~ 5V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dBm @ 2 GHz
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MAAL-010704
MAAL-010704
OT-363
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sot-363 n-channel mosfet
Abstract: GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44
Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology
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TSM1412
OT-363
TSM1412CU6
sot-363 n-channel mosfet
GD 363
A2 N-Channel
n-channel mosfet transistor
TSM1412
SOT363 44
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C6073
Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Text: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP1150
RP1151
RP2450
RP3510
RP3511
RP3512
RP3513
RP3514
RP3990
RP4800
C6073
SIL1178
c6074
C9013
NEC C3568
c4793
c5885
K769
C6090
15B1 zener diode
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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