BP5232-25A
Abstract: BP5232-33A BP5233-33A BP5234-33A
Text: BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A Power Module DC / DC converter BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A The BP5232-25A, BP5232-33A, BP5233-33A and BP5234-33A are DC / DC converters that use PWM system and VIF system. They contain control circuits, switching devices and coils, and operate by only connecting an I/O smoothing
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BP5232-25A
BP5232-33A
BP5233-33A
BP5234-33A
BP5232-25A,
BP5232-33A,
BP5234-33A
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BP5232-25A
Abstract: BP5232-33A BP5233-33A BP5234-33A capacitor 1000uF 50V
Text: BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A Power Module DC / DC converter BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A The BP5232-25A, BP5232-33A, BP5233-33A and BP5234-33A are DC / DC converters that use PWM system and VIF system. They contain control circuits, switching devices and coils, and operate by only connecting an I/O smoothing
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BP5232-25A
BP5232-33A
BP5233-33A
BP5234-33A
BP5232-25A,
BP5232-33A,
BP5234-33A
capacitor 1000uF 50V
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Untitled
Abstract: No abstract text available
Text: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271M
ISL8271M
FN8636
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FSJ264D3
Abstract: FSJ264R 1E14 2E12 FSJ264D FSJ264D1 Rad Hard in Fairchild for MOSFET
Text: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 4D, FSJ26 4R /Subjec t (33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (33A, 250V, 0.080
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FSJ264D,
FSJ264R
FSJ26
FSJ264D3
FSJ264R
1E14
2E12
FSJ264D
FSJ264D1
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: DATASHEET Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271M
ISL8271M
FN8636
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TA9295
Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
Text: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP250
TB334
O-247
TA9295
irfp250 applications
IRFP250
TB334
transistor IRFP250
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1E14
Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264R3
Text: FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSJ264D,
FSJ264R
1E14
2E12
FSJ264D
FSJ264D1
FSJ264D3
FSJ264R
FSJ264R1
FSJ264R3
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Untitled
Abstract: No abstract text available
Text: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCX330N25
105mW
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: Application Note 1925 ISL8271MEVAL1Z Evaluation Board User Guide The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of
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ISL8271MEVAL1Z
ISL8271M
AN1925
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rcj330
Abstract: No abstract text available
Text: RCJ330N25 Nch 250V 33A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCJ330N25
105mW
SC-83)
R1102A
rcj330
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR SC-33A PACKAGE DIMENSION B A C DIM MILLIMETERS _ 0.1 3.0+ A _ 0.1 3.0 + B _ 0.12 C 1.15+ 1.50 TYP. D 0.61 TYP. E 1.78 TYP. F G 0.76 TYP. G PIN NO FUNCTION 3 4 2 5 1 6 1 E F D SC-33A 5 3 2 4 6 GROUND SIGNAL SIGNAL
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SC-33A
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017BH
Abstract: No abstract text available
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. R8C/33A Group REJ03B0228-0001 Rev.0.01 Oct 26, 2007 RENESAS MCU 1. Overview 1.1 Features The R8C/33A Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core, employing sophisticated
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R8C/33A
REJ03B0228-0001
017BH
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Untitled
Abstract: No abstract text available
Text: MCOTS-C-28E-12-HZ Single Output Half-brick a pu d bl va ic n at ce io d n MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 12V Output 33A Output 94%@16.5A/94%@33A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings
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MCOTS-C-28E-12-HZ
6-70V
6-100V
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75631P
Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
Text: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features
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HUF75631P3,
HUF75631S3S
O-220AB
O-263AB
HUF75631P3
75631P
75631P
75631S
AN9321
AN9322
HUF75631P3
HUF75631S3S
HUF75631S3ST
TB334
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76423P
Abstract: HUF76423P3 HUF76423S3S HUF76423S3ST TB334 76423S
Text: HUF76423P3, HUF76423S3S Data Sheet October 1999 File Number 4708.2 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 23P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76423P3 HUF76423S3S D rpor on, ann gic vel raF wer OSF
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HUF76423P3,
HUF76423S3S
O-220AB
HUF76423P3
76423P
76423P
HUF76423P3
HUF76423S3S
HUF76423S3ST
TB334
76423S
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ap4418
Abstract: AP4418GJ
Text: AP4418GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic 35V RDS ON 20mΩ ID G ▼ RoHS Compliant BVDSS 33A S Description
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AP4418GH/J
O-252
AP4418GJ)
O-251
ap4418
AP4418GJ
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Untitled
Abstract: No abstract text available
Text: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ264D,
FSJ264R
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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TRANSISTORS 132 GD
Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF150,
IRF151,
IRF152,
IRF153
TA17421.
RF152,
RF153
TRANSISTORS 132 GD
IRF150
kiv-8
IRF151
circuits of IRF150
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Untitled
Abstract: No abstract text available
Text: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSJ264D,
FSJ264R
MIL-S-19500
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arinc 404
Abstract: No abstract text available
Text: DPX A RIN C 404 DPX Panel Cutouts Rack and Panel Connectors DPX2 All tolerances ate + . 0 1 5 0.38| unless otherwise noted. -33 FRONT MOUNT -33 REAR MOUNT -33A & -33B FRONT MOUNT A -33A REAR MOUNT -34B FRONT MOUNT For - 2 3 float mtg. mod. 1.78 (45 .21 .
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L633
Abstract: No abstract text available
Text: SN74ALS33A, SN54ALS33A QUADRUPLE 2-INPUT POSITIVE-NOR BUFFERS WITH OPEN-COLLECTOR OUTPUTS 02661. APRIL 1982 - REVISED MAY 1986 S N 54A LS 33A J PACKAGE S N 74A LS 33A . . . 0 OR N PACKAGE Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers,
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SN74ALS33A,
SN54ALS33A
300-mil
N54ALS
ALS33A
L633
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Untitled
Abstract: No abstract text available
Text: Customer Information Sheet D RAWING N o .: SHEET M80-5S2I005ML-02-33A-04-33A 2 OF 2 1 IF IN D OUBT - ASK | c | NOT TO SCALE | THIRD ANGLE PROJECTION T ALL DIMENSIONS I N mm SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L9 4 V -0 , BLACK S I G N A L CO NTA CT: PHOSPHOR BRONZE
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M80-5S2I005ML-02-33A-04-33A
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ic 3843
Abstract: IC 3843 8 Pin 3843 PWM power supply application note ic 3843 external TL 3843 P 3843 Power Supply IC TL 3843 3833A 3843 application note
Text: ASSP For Power Supply Applications Lithiumion Battery Chargers . DC/DC Converter 1C (High Precision with Constant-current Function)_ • DESCRIPTION The FUJITSU M B3813A/33A/43is a pulse width modulation (PWM) DC/DC converter 1C with independent output
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B3813A/33A/43is
MB3813A
MB3833A
F9803
ic 3843
IC 3843 8 Pin
3843 PWM power supply application note
ic 3843 external
TL 3843 P
3843 Power Supply IC
TL 3843
3833A
3843 application note
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DX34C
Abstract: DX34
Text: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base : B DX34 BDX34A BDX34B
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BDX34/A/B/C
BDX33/33A/33B/33C
BDX34A
BDX34B
BDX34C
BDX34
DX34C
DX34
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