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Diodes Incorporated APR34330CMPTR-G1 MOSFET N-CH 5V 8-SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APR34330CMPTR-G1	Cut Tape	3,919		1	1 $1.08 10 $0.728 100 $1.08 1000 $0.37144 10000 $0.34344	Buy Now
	APR34330CMPTR-G1	Digi-Reel			1	1 $1.08 10 $0.728 100 $1.08 1000 $0.37144 10000 $0.34344	Buy Now
	APR34330CMPTR-G1	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.32813	Buy Now
Mouser Electronics	APR34330CMPTR-G1					1 - 10 - 100 - 1000 - 10000 $0.375	Get Quote
Bristol Electronics	APR34330CMPTR-G1		7,593			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	APR34330CMPTR-G1				1	1 $0.835 10 $0.508 100 $0.404 1000 $0.363 10000 $0.363	Get Quote
Avnet Silica	APR34330CMPTR-G1			26 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi AR0330CM1C12SHKA0-CP IMAGE SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AR0330CM1C12SHKA0-CP	Tray	2,070		1	1 $22.54 10 $22.54 100 $14.41863 1000 $12.10248 10000 $12.10248	Buy Now
Mouser Electronics	AR0330CM1C12SHKA0-CP					1 - 10 - 100 - 1000 - 10000 $12.1	Get Quote
Newark	AR0330CM1C12SHKA0-CP	Bulk			2,000	1 - 10 - 100 - 1000 $12.99 10000 $12.99	Buy Now
Avnet Silica	AR0330CM1C12SHKA0-CP			53 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	AR0330CM1C12SHKA0-CP			53 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	AR0330CM1C12SHKA0-CP		32,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi AR0330CM1C21SHKA0-CR IMAGE SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AR0330CM1C21SHKA0-CR	Tray	2,000		1	1 $15.14 10 $15.14 100 $9.80775 1000 $9.80775 10000 $9.80775	Buy Now
Mouser Electronics	AR0330CM1C21SHKA0-CR					1 - 10 - 100 - 1000 - 10000 $9.8	Get Quote
Newark	AR0330CM1C21SHKA0-CR	Bulk			2,000	1 - 10 - 100 - 1000 $10.67 10000 $10.67	Buy Now
Avnet Silica	AR0330CM1C21SHKA0-CR			53 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	AR0330CM1C21SHKA0-CR			53 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Flip Electronics	AR0330CM1C21SHKA0-CR		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi AR0330CM1C21SHKA0-CP IMAGE SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AR0330CM1C21SHKA0-CP	Tray	1,772		1	1 $15.81 10 $15.81 100 $10.29813 1000 $10.29813 10000 $10.29813	Buy Now
Mouser Electronics	AR0330CM1C21SHKA0-CP					1 - 10 - 100 - 1000 - 10000 $11.77	Get Quote
Newark	AR0330CM1C21SHKA0-CP	Bulk			2,000	1 - 10 - 100 - 1000 $11.21 10000 $11.21	Buy Now
Rochester Electronics	AR0330CM1C21SHKA0-CP		10,884		1	1 $11.44 10 $11.44 100 $10.75 1000 $9.72 10000 $9.72	Buy Now
Avnet Asia	AR0330CM1C21SHKA0-CP				2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	AR0330CM1C21SHKA0-CP			53 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	AR0330CM1C21SHKA0-CP		5,900		1	1 $28.72 10 $28.72 100 $18.34 1000 $13.9 10000 $13.9	Buy Now
onsemi AR0330CM1C12SHAA0-DR IMAGE SENSOR MONO CMOS 48-ILCC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AR0330CM1C12SHAA0-DR	Tray	1,516		1	1 $21.71 10 $21.71 100 $13.88963 1000 $11.65864 10000 $11.65864	Buy Now
	AR0330CM1C12SHAA0-DR	Tray	18		1	1 $22.12 10 $22.12 100 $22.12 1000 $22.12 10000 $22.12	Buy Now
Newark	AR0330CM1C12SHAA0-DR	Bulk			1,520	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	AR0330CM1C12SHAA0-DR		18,384		1	1 $12.71 10 $12.71 100 $11.95 1000 $10.8 10000 $10.8	Buy Now
Flip Electronics	AR0330CM1C12SHAA0-DR		1,905			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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330CM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MINI-MELF DIODE BLUE CATHODE Abstract: MELF ZENER DIODE color bands blue MELF DIODE color bands LL34 TC16V TC18V TCLLZ10V TCLLZ11V TCLLZ12V TCLLZ13V Text: TAK CHEONG SEM ICONDUCTOR 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators Absolute Maximum Ratings SURFACE MOUNT LL34 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature Value	Original	PDF	LL-34 LL-34 330cm 500mm MINI-MELF DIODE BLUE CATHODE MELF ZENER DIODE color bands blue MELF DIODE color bands LL34 TC16V TC18V TCLLZ10V TCLLZ11V TCLLZ12V TCLLZ13V
MPSA65 Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*	Original	PDF	MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor
Si4450DY Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
On semiconductor date Code sot-223 Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	BCP56 OT-223 On semiconductor date Code sot-223 BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
2502P Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	PDF	SI6926DQ 2502P CBHK741B019 F63TNR FDW2502P SI6926DQ
SI9955DY Abstract: fairchild NDS 1182 Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si9955DY fairchild NDS 1182
transistor 2N5461 Abstract: No abstract text available Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.	Original	PDF	2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461
Untitled Abstract: No abstract text available Text: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V	Original	PDF	FDS2670
Untitled Abstract: No abstract text available Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4420DY
Untitled Abstract: No abstract text available Text: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si9945DY
FDR835N Abstract: 831N Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	PDF	FDR6678A FDR835N 831N
PART NUMBER MARKING SC70-6 Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70 Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching	Original	PDF	FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Untitled Abstract: No abstract text available Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4412DY
2539a Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL Text: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate	Original	PDF	FDS5670 FDS5670 2539a IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL

Untitled Abstract: No abstract text available Text: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	PDF	FDT434P
F852 transistor Abstract: No abstract text available Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	PDF	FDT439N F852 transistor
Untitled Abstract: No abstract text available Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	PDF	FD8305N FDR8305N
Untitled Abstract: No abstract text available Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate	Original	PDF	FDC6327C
AA MARKING CODE SO8 Abstract: No abstract text available Text: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low	Original	PDF	FDS6680S FDS6680S FDS6680 AA MARKING CODE SO8
CBVK741B019 Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z Text: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.	Original	PDF	FDS2570 CBVK741B019 F011 F63TNR F852 FDS2570 FDS9953A L86Z
c3 SOT-223 Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	PDF	NDT452P c3 SOT-223 CBVK741B019 F63TNR F852 NDT452P PN2222A
SSOT-6 Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527 Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage	Original	PDF	FDC602P SSOT-6 CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
fdn5618p Abstract: No abstract text available Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V	Original	PDF	FDN5618P fdn5618p
P-Channel MOSFET code L1A S Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state	Original	PDF	FDC6324L P-Channel MOSFET code L1A S CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v

330CM Search Results

330CM Price and Stock

Diodes Incorporated APR34330CMPTR-G1

onsemi AR0330CM1C12SHKA0-CP

onsemi AR0330CM1C21SHKA0-CR

onsemi AR0330CM1C21SHKA0-CP

onsemi AR0330CM1C12SHAA0-DR

330CM Datasheets Context Search

MINI-MELF DIODE BLUE CATHODE

MPSA65

Si4450DY

On semiconductor date Code sot-223

2502P

SI9955DY

transistor 2N5461

Untitled

Untitled

Untitled

FDR835N

PART NUMBER MARKING SC70-6

Untitled

2539a

Untitled

F852 transistor

Untitled

Untitled

AA MARKING CODE SO8

CBVK741B019

c3 SOT-223

SSOT-6

fdn5618p

P-Channel MOSFET code L1A S