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    3309 POWER TRANSISTOR Search Results

    3309 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3309 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX948

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*


    Original     		PDF ZTX948 -10mA, -100mA, 50MHz -400mA 400mA, 100ms ZTX948 DSA003779

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ISSUE 2 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA


    Original     		PDF ZTX948 100ms

    D012

    Abstract: D041 texas instruments DTL logic
    Text: TM S 3309 JC TWIN 512-BIT DYNAMIC SHIFT REGISTER/ACCUMULATOR > features z c T w o independent registers/accum ulators > a < 10 -M H z guaranteed operating frequency L o w power dissipation typical 90 /¿W/bit at 1 M H z T T L / D T L com patible Recirculate logic on the chip


    OCR Scan     		PDF 512-BIT 10-MHz D012 D041 texas instruments DTL logic

    da 3309

    Abstract: amplificateur de son 3v self choc 2n3309 2522N signaux SELF DE CHOC
    Text: 2 N 3309 NPN SILICON TRANSISTORS, Ei IT A X IA L PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X • Power amplification at 250 MHz A m p lifica tio n de puissance à 250 MHz v CBO 50V v CEO 30 V O *T Gp 300 MHz min. 2W min. 250 MHz 7 dB min.


    OCR Scan     		PDF

    2N3927

    Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
    Text: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter


    OCR Scan     		PDF Q02flGSfl 2N3924 2N3926 2N3927 T-33-0? 2N3924 2N3926 2N3927 T0-60 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968

    BD235 PHILIPS

    Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its


    OCR Scan     		PDF BD233 BD235 BD237 711002b aSOT-32 BD234, BD236 BD238. BD233 BD235 BD235 PHILIPS bd233 T bd237 philips BD234 BD237-10 BD237 BD238

    RZB06050W

    Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
    Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design


    OCR Scan     		PDF RZB06050W FO-57C 711Dfi2fci T-33-09 RZB06050W transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    B0937

    Abstract: b 939 a ic B0937 T3309 B0941 BD933 transistor A 935 BD934 BD937 BD941
    Text: BD933; 935 BD937; 939 BD941 PHILIPS INTERNATIONAL SbE D • 711DfiEb 0043D44 MIL ■ P H I N SILICO N EPITAXIAL B A S E PO W ER T R A N S IS T O R S 7 - 3 3 - 0 * 1 N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television


    OCR Scan     		PDF 711DfiEb BD933; BD937; BD941 BD934; BD933 T-33-09 B0937 b 939 a ic B0937 T3309 B0941 transistor A 935 BD934 BD937 BD941

    TACAN

    Abstract: SD1538 TACAN transistor low power rf transistor T
    Text: O M C c T I ^ P 'ïa T E 3 7 □ □ □ O m O S G S—THOMSON_ SOLID STATE MICROWAVE 1 TD T -33-09 SD1538 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryville, PA 18936 • 215 362-8500 «TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN


    OCR Scan     		PDF SD1538 DME/50 TACAN/50 TACAN TACAN transistor low power rf transistor T

    C 3311 transistor

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -JU N E 94 _ FEATURES * * * 4.5 Am ps continuous current Up to 20 Am ps peak current Very lo w saturation voltage * * Excellent gain up to 20 Am ps Very lo w leakage * * Exceptional gain linearity dow n to 10mA


    OCR Scan     		PDF -100mA, 50MHz -400mA 400mA, ZTX948 C 3311 transistor

    rtc37

    Abstract: PV3742B4X P10T MARKING CODE N for RF transistor
    Text: N AMER P H I L I P S / D I S C R E T E MAINTENANCE TYPE Jl DfaE D ^53^31 D D lSin PV3742B4X T - 33-09 MICROWAVE POWER TRAN SISTO R N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz. , Diffused emitter ballasting resistors, interdigitated structure, multiceli geometry, localized thick oxide


    OCR Scan     		PDF PV3742B4X FO-83. rtc37 PV3742B4X P10T MARKING CODE N for RF transistor

    UMIL80

    Abstract: UMIL10 j105 transistor acrian inc
    Text: UMILIO GENERAL DESCRIPTION The UMIL10 is a general purpose UHF power common emitter transistor designed for use through 400 MHz. It features gold metallization for high reliability and diffused ballasting for superior ruggedness. It can be operated full Class A at


    OCR Scan     		PDF UMIL10 UMIL80 j105 transistor acrian inc

    Untitled

    Abstract: No abstract text available
    Text: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.


    OCR Scan     		PDF BDT91F; BDT93F BDT95F OT186 BDT92F, BDT94Fand BDT96F. OT186.

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec


    OCR Scan     		PDF BD239/A/B/C BD240/A/B/C BD239, BD239A, BD239B BD239C O-220 BD240, BD240A, BD240B

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE D E V E L O P M E N T DATA □bE D • bbS3T31 0015147 b ■ PZ2327B15U This data sheet contains advance information and specifications are subject to change without notice. T-c 3 % - Q I MICROWAVE POW ER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended for use in a common-base, class-C broad­


    OCR Scan     		PDF bbS3T31 PZ2327B15U bb53131 bfci53T31 7Z2412$ D01S1S5

    PZ2327B15U

    Abstract: No abstract text available
    Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.


    OCR Scan     		PDF PZ2327B15U 711DflSt 711dfleb t-33-09 7110fl5b PZ2327B15U

    2222C

    Abstract: BD944 945F
    Text: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.


    OCR Scan     		PDF BD943F; BD945F BD947F 711D02b BD944F, BD946Fand BD948F. BD943F QQ43QA1 T-33-09 2222C BD944 945F

    Untitled

    Abstract: No abstract text available
    Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.


    OCR Scan     		PDF PZ2327B15U 711Dfl2b T-33-09 7110flEb 711065b Q04b4c

    BD233

    Abstract: FT501
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs


    OCR Scan     		PDF BD233 BD235 BD237 711002b 711062b FT501

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current


    OCR Scan     		PDF ZTX948 0Q1Q354 001G35S

    BB5M3

    Abstract: BUT21A BUT21 BUT21BF BUT21CF IEC134 but21c
    Text: N AMER PHILIPS/DISCRETE 25E D II bbS.BT31 D010Ô43 a I • BUT21BF BUT21CF X T - 3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control


    OCR Scan     		PDF hh53131 BUT21BF BUT21CF OT186 T-33-09 7Z94640 BUT21BF) BUT21CF) BB5M3 BUT21A BUT21 BUT21CF IEC134 but21c

    BDT29

    Abstract: BDT29B BDT30 TIP29 c4060
    Text: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.


    OCR Scan     		PDF bfa53131 BDT29; BDT29B; r-33-( BDT30 TIP29 BDT29 bS3131 00nbS7 BDT29B c4060

    BD 201F

    Abstract: No abstract text available
    Text: BD201F; BD203F; BDX77F PHILIPS INTERNATIONAL SbE D • 711002b 0042Û0Ô AMS ■ PHIN T '3 3 - O ^ SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 711002b BD204F 711005b T-33-09 BD 201F