Untitled
Abstract: No abstract text available
Text: VPN = Voltage Transducer CV 3-1500 1000 V For the electronic measurement of voltages : DC, AC, pulsed., with a galvanic isolation between the primary circuit high voltage and the secondary circuit (electronic circuit). 0630 Electrical data VPN VP VS KN
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Partial Discharge Measurements
Abstract: LEM Components EN 50155
Text: Voltage Transducer CV 3-1500 VPN = 1000 V For the electronic measurement of voltages : DC, AC, pulsed., with a galvanic isolation between the primary circuit high voltage and the secondary circuit (electronic circuit). 0630 Electrical data VPN VP VS KN
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SK25GD063
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A – 40 . + 150 – 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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Eoff25
25GD063
ETIN\FRAMEDAT\datbl\B17-Semitop\SK25GD063
SK25GD063
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6ES7307-1EA00-0AA0
Abstract: 6ES7307-1BA00-0AA0 siemens 6ES7307-1EA00-0AA0 6EP1334-3BA00 6ES7307-1KA01-0AA0 6EP1333-3BA00 6ES7307-1BA00-0AA0 siemens 6EP1336-3BA00 siemens 6ep1334-3ba00 SIEMENS, SITOP Power 40, 6EP1437-2BA10
Text: SITOP power supply Technical data SITOP Power Supply Answers for industry. E80001-A2490-P310-V2-7600_BL.indd 1 08.05.2009 13:14:13 Uhr Selection table SITOP power supplies Input voltage Output current modular smart LOGO!Power “Special design, special use“
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E80001-A2490-P310-V2-7600
6EP1331-2BA10
331-1SH02
6ES7307-1BA00-0AA0
6EP1332-2BA10
332-1SH42
6EP1232-1AA00
6EP1332-1SH51
6EP1333-3BA00
6EP1333-2AA01
6ES7307-1EA00-0AA0
6ES7307-1BA00-0AA0
siemens 6ES7307-1EA00-0AA0
6EP1334-3BA00
6ES7307-1KA01-0AA0
6EP1333-3BA00
6ES7307-1BA00-0AA0 siemens
6EP1336-3BA00
siemens 6ep1334-3ba00
SIEMENS, SITOP Power 40, 6EP1437-2BA10
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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25GH063
etin\FRAMEDAT\datbl\B17-Semitop\sk25gh063
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Semikron Semitop 3
Abstract: Semikron sk 1
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A Tj, Tstg) Tsol Visol
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MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
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Untitled
Abstract: No abstract text available
Text: Series 72 Annular Tubing 121-190 Annular Polymer-Core Convoluted Tubing with External Braid Tubing plus a single EMI/RFI braided shield How To Order Product Series Dash No. Table I 121 - 190 - 16 B Basic No. Table I - Dash Number/Diameter A Inside Dia B Outside Dia
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Untitled
Abstract: No abstract text available
Text: Series 72 Annular Tubing 121-192 Annular Polymer-Core Convoluted Tubing with Double External Braid Tubing plus a double layer of high dB EMI/RFI shielding How To Order Product Series B Dash No. Table I 121 - 192 - 16 Basic No. Dash No 06 09 12 14 16 20 24
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SK25GB063
Abstract: SEMITOP 063 SK 200 GAR 125 33 ups 063
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A – 40 . + 150 – 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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25GB063
ETIN\FRAMEDAT\datbl\B17-Semitop\SK25GB063
SK25GB063
SEMITOP 063
SK 200 GAR 125
33 ups 063
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BiMOSFET
Abstract: 40N160
Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C G C E E Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N140
40N160
O-268
40N160
O-268
IXBH40N160
BiMOSFET
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121-192
Abstract: No abstract text available
Text: Series 72 Annular Tubing 121-192 Annular Polymer-Core Convoluted Tubing with Double External Braid Tubing plus a double layer of high dB EMI/RFI shielding How To Order Product Series B Dash No. Table I 121 - 192 - 16 Basic No. Dash No 06 09 12 14 16 20 24
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121-190
Abstract: No abstract text available
Text: Series 72 Annular Tubing 121-190 Annular Polymer-Core Convoluted Tubing with External Braid Tubing plus a single EMI/RFI braided shield How To Order Product Series Dash No. Table I 121 - 190 - 16 B Basic No. Table I - Dash Number/Diameter A Inside Dia B Outside Dia
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Semikron Semitop 3
Abstract: 33 ups 063 Semikron Semitop 2
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A Tj, Tstg) Tsol Visol
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Untitled
Abstract: No abstract text available
Text: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT30S20S 2 200V 30A HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics
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APT30S20S
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100V 60A Diode
Abstract: No abstract text available
Text: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT60S20S 2 200V 60A HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics
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APT60S20S
100V 60A Diode
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6ES7307-1EA01-0AA0
Abstract: 6EP1971-1BA00 6EP1331-1SH02 6EP1436-2BA10 6EP1332-1SH42 SIEMENS, SITOP Power 40, 6EP1437-2BA10 6ES7307-1BA01-0AA0 6EP1336-3BA00 ET200pro 6EP1437-3BA10
Text: SITOP power supply Technical data, April 2010 SITOP Power Supply Answers for industry. E80001-A2490-P310-V4-7600_BL.indd 1 14.04.10 09:47 SITOP – reliable 24 V DC power supply Efficient operation of a machine or plant requires a reliable, constant power
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E80001-A2490-P310-V4-7600
E80001-A2490-P310-V4-7600
6ES7307-1EA01-0AA0
6EP1971-1BA00
6EP1331-1SH02
6EP1436-2BA10
6EP1332-1SH42
SIEMENS, SITOP Power 40, 6EP1437-2BA10
6ES7307-1BA01-0AA0
6EP1336-3BA00
ET200pro
6EP1437-3BA10
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3sk45
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 45 / 30 90 / 60 57 / 38 114 / 76 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C
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ETIN\FRAMEDAT\datbl\B17-Semitop\sk45gh063
3sk45
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SKIIP 32 nab 12 t 49
Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Text: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel
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D-90253
SKIIP 32 nab 12 t 49
SKiiP 33 NEC 125 To
skiip 33 ups 063
semikron skiip 24 nab 125 t 12
thyristor firing circuit
SEMIKRON SKIIP 20 NAB 12 T 17
semikron skiip 20 nab 12 I T 38
Semikron skiip 31 nab 12
semikron skiip 81 AN 15 T
semikron skiip 32 nab 12
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30A Ultrafast Diode APT
Abstract: No abstract text available
Text: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT30D30S 2 300V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics
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APT30D30S
30A Ultrafast Diode APT
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APT60D30B
Abstract: APT60D30S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT60D30B APT60D30S 300V 300V 60A 60A 1 2 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • TO-247 or Surface Mount
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APT60D30B
APT60D30S
O-247
APT60D30B
APT60D30S
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Untitled
Abstract: No abstract text available
Text: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC gR sizes 7x - 690 VAC Main characteristics Ferraz Shawmut PSC-gRB 690 VAC fuse-links provide maximum flexibility in equipment design and ultimate protection for today’s power conversion equipment.
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J310002
Z310039
K310003
P310007
S310010
SCAC114
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30n60u
Abstract: 30N60A ixgh30n60a IXGM30N60
Text: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms
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O-247
30N60U1
30N60AU1
4bflb22b
30n60u
30N60A
ixgh30n60a
IXGM30N60
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Untitled
Abstract: No abstract text available
Text: 3 2 5 A Avg. 5 0 0 R M S Up to 8 0 0 Volts 1 0 -5 0 fjs Fast Switching SCR T 7 0 7 _ _33 Inches Symbol Millimeters M in. Max. Min. -Max. A A, B 9.76 10.18 .063 10.00 10.42 .172 247.90 258.57 1.60 254.00 264.67 4.37 0D E F 1.620 .430 1.490 1.750 .810 41.15
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