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    32N50

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


    OCR Scan     		PDF 32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50