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    Murata Manufacturing Co Ltd GCJ31BR72J332KXJ1L

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 3300 pF 630 VDC 10% 1206 X7R AEC-Q200
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    Mouser Electronics GCJ31BR72J332KXJ1L 2,570
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    Knowles Corporation 2220YA250332KXTB16

    Safety Capacitors 3300pF 2220 2220 X7R X1/Y2
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    Mouser Electronics 2220YA250332KXTB16 1,000
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    Murata Manufacturing Co Ltd GCJ21AR72E332KXJ1D

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 3300 pF 250 VDC 10% 0805 X7R AEC-Q200
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    Mouser Electronics GCJ21AR72E332KXJ1D 72
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    Murata Manufacturing Co Ltd GCJ31BR73A332KXJ1L

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 3300 pF 1 kVDC 10% 1206 X7R AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GCJ31BR73A332KXJ1L
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    • 10000 $0.056
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    Murata Manufacturing Co Ltd GCJ21AR72E332KXJ1J

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 3300 pF 250 VDC 10% 0805 X7R AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GCJ21AR72E332KXJ1J
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    32KX1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC145483

    Abstract: DSP56800 DSP568XX nortel codec 32Kx16
    Text: Low Speed Modem PSTN RX Nortel Proprietary Phone Line I/F 13 Bit Linear CODEC MC145483 SSI CODEC B 16-Bit DSP568XX SPI Microcontroller Microcontroller 32Kx16 SRAM PORTA Card Reader Boot ROM Application Description This document describes the implementation of a low speed modem using the DSP56800 family


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    PDF MC145483 16-Bit DSP568XX 32Kx16 DSP56800 DSP56L811 22bis 42/LAPM MC145483 DSP568XX nortel codec 32Kx16

    T2D 66

    Abstract: t2d 64 T2D 07 chips t2d t2d diode transistor t2d 82434LX FCT245 cache controller intel application note cache controller
    Text: Application Note AN-02 Using 32Kx18 Burst SRAMS with 82434 Pentium Cache Controller Burst mode SRAMs such as the PDM44528, 32Kx18 Burst Mode SRAM, simplify the design of high speed secondary cache memories. They combine the necessary elements of high speed


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    PDF AN-02 32Kx18 PDM44528, 82434LX 64-bit A31-A5 T2D 66 t2d 64 T2D 07 chips t2d t2d diode transistor t2d FCT245 cache controller intel application note cache controller

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


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    PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    UT69151

    Abstract: 32Kx16 80C86 UT22VP10 UT7156
    Text: Shared Memory Interface to UT69151 SµMMITTM VDD 80C86 MN/MX ALE ADDRESS LATCH C OE DATA AD19-AD0 OUT 32Kx16 SRAM 3 Latches required RD HLDA HOLD DT/R UT54ATCS373 ADDRESS DATA CS RD WR M/IO CLK UT7156 CLK 32Kx16 SRAM VDD ADDRESS DATA VDD Sµmmit VDD RRD RWR


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    PDF UT69151 80C86 AD19-AD0 32Kx16 UT54ATCS373 UT7156 64Kx16 D15-D0 32Kx16 80C86 UT22VP10 UT7156

    HT56R678

    Abstract: bank
    Text: HT56R678 中如何將副程式放在 Bank3 去執行 HT56R678 中如何將副程式放在 Bank3 去執行 文件編碼:HA0184T 簡介 HT56R678 之 MCU 內有 OTP Programmable Memory 32Kx16 Bits,分成 4 個 ROM Bank,分別 爲 Bank0Bank1、Bank2、Bank3,本文主要介紹如何將副程式放在 Bank3 去執行。


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    PDF HT56R678 HA0184T 32Kx16 0000H HT56R678 bank

    Untitled

    Abstract: No abstract text available
    Text: HT56R26 將 Subroutine 放在 ROM Bank3 之應用程式 HT56R26 將 Subroutine 放在 ROM Bank3 之 應用程式 文件編碼:HA0218T 簡介 HT56R26 之 MCU 內有 OTP Programmable Memory 32Kx16 Bits,分成 4 個 ROM Bank,分別爲 Bank0Bank1、Bank2、Bank3,本文主要介紹如何將副程式放在 Bank3 去執行。


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    PDF HT56R26 HA0218T 32Kx16 0000H HT56R26

    NPN transistor 8050

    Abstract: 8050 NPN transistor 8050 pin connections TRANSISTOR 8050 XTAL 4M npn 8050 Taiwan Xtal SN66007 SN66010 SN66012
    Text: SN660000 WITH OTP ROM Configure and Setup OVERVIEW 27mm 33mm Figure-1 Figure 2 CHIPS EMULATED SN66000 Series: OTP Type V 1.0 Emulated Chip Voice Channel ROM Duration Number Size IO 2M SN66007 7 sec 2 25Kx12 8: 8 IO P2, P3 2M SN66010 10 sec 2 32Kx12 8: 8 IO (P2, P3)


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    PDF SN660000 SN66000 25Kx12 SN66010 32Kx12 SN66012 40Kx12 SN66016 52Kx12 SN66020 NPN transistor 8050 8050 NPN transistor 8050 pin connections TRANSISTOR 8050 XTAL 4M npn 8050 Taiwan Xtal SN66007 SN66010 SN66012

    CY7C4255V

    Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V
    Text: fax id: 5422 CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V PRELIMINARY 8K/16K/32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to


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    PDF CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 8K/16K/32K/64Kx18 CY7C4255/65/75/85V CY7C42X5V CY7C4255V CY7C4265V CY7C4275V CY7C4285V

    Untitled

    Abstract: No abstract text available
    Text: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs


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    PDF TMS320F28377D, TMS320F28376D SPRS880 TMS320F2837xD TMS320C28xâ 32-Bit

    encoder 200 43

    Abstract: TMS320x2806x
    Text: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066 TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062 SPRS698B – NOVEMBER 2010 – REVISED JULY 2011 www.ti.com Piccolo Microcontrollers Check for Samples: TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066,


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    PDF TMS320F28069, TMS320F28068, TMS320F28067, TMS320F28066 TMS320F28065, TMS320F28064, TMS320F28063, TMS320F28062 SPRS698B encoder 200 43 TMS320x2806x

    uPD765

    Abstract: DP8473 N82077 NEC765A PC01 PC87413 PC87414 PC87416 PC87417 tag 9320
    Text: November 2001 Rev 1.1 PC87413, PC87414, PC87416, PC87417 LPC ServerI/O for Servers and Workstations General Description The National Semiconductor PC8741x family of LPC ServerI/O devices “PC8741x” comprises highly integrated Advanced I/O products. The PC8741x is targeted for a wide


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    PDF PC87413, PC87414, PC87416, PC87417 PC8741x PC8741x" uPD765 DP8473 N82077 NEC765A PC01 PC87413 PC87414 PC87416 PC87417 tag 9320

    16-Bit Microprocessors

    Abstract: ELECTRONIC ARRAYS memory
    Text: m o EDI9F3420C \ ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory anrays in a single


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    PDF EDI9F3420C 128Kx16 32Kx16 EDI9F3420C EDI9F3420C, 110ns. 130ns, 150ns. 16-Bit Microprocessors ELECTRONIC ARRAYS memory

    Untitled

    Abstract: No abstract text available
    Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,


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    PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C

    32Kx16 150ns

    Abstract: No abstract text available
    Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Moduie 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory arrays in a single


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    PDF 128Kx16 32Kx16 120ns 150ns EDI9F3420C EDI9F3420C 32Kx16 150ns

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


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    PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    Untitled

    Abstract: No abstract text available
    Text: High Performance AS7C513 A S7C 3513 32KX16 CMOS SRAM A 3 2 K X 1 6 CM O S SRAM Advance information Features • Organization: 32,768 words x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 /8 /1 0 ns output enable access time • Low power consumption


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    PDF AS7C513 32KX16 44-pin R00344R AS7C3513 AS7C513-12JC AS7C513-15 AS7C3513-15JC AS7C513-20JC

    32Kx16

    Abstract: Intel EEPROM 32kx8
    Text: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4


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    PDF 32Kx8 64KX8 32KX16 128KX8 64KX16 32KX32 64KX32 512KX8 256KX16 Intel EEPROM 32kx8

    M5M51001BJ20L

    Abstract: M5M51001BJ25 M5M5278DVP20L M5M51004BJ-20 M5M51001BJ-25 M5M5278DVP-20L M5M5278DJ-15L M5M51001BP-25 M5M5278DJ-15 M5M51001BJ-20
    Text: M EMORIES • H IG H SPEED STATIC RAMs CONTINUED Memory Configuration Memory capacity Max. access time (rw> Function mtxle !cc Stand by= 50 pA (Vcc= 3.0V) Low Power Version 20 32Kx8 256K 10 12 10 12 32Kx16 512K 15 15 | 20 25 !Mx1 Ice Stand by= 50 ^ A ! 20


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    PDF M5M5278DP-15L M5M5278DJ-15L M5M5278DFP-1 M5M5278DVP-15L M5M5278DP-20t_ M5M5278DJ-20L M5M5278DFP-20L M5M5278DVP-20L M5M5278EJ-10 M5M5278EVP-10 M5M51001BJ20L M5M51001BJ25 M5M5278DVP20L M5M51004BJ-20 M5M51001BJ-25 M5M51001BP-25 M5M5278DJ-15 M5M51001BJ-20

    Untitled

    Abstract: No abstract text available
    Text: WD\ EDI8F1664C-PSC m m ELECTRONIC DESIGNS, INC. 64Kx16 SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. The 32Kx8 RAMs are organized as two banksof 32Kx16 bits


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    PDF EDI8F1664C-PSC 64Kx16 EDI8F1664C-PSC 32Kx8 32Kx16 100ns

    A934

    Abstract: No abstract text available
    Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,


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    PDF EDI9F3420C 128Kx16 32Kx16 120ns 150ns EDI9F3420C A934

    05N14

    Abstract: AS7C3513 AS7C513
    Text: H ig h P e r fo r m a n c e 3 2 K x 16 32Kx16 CM O S SRAM „ AS7C513 | | A S 7 C 3 5 13 32K x 16 CMOS SRAM Advance information • T T L -com patible, th ree-state I/O • 4 4 -p in JEDEC sta n d ard package - 4 0 0 m il SOJ - 4 0 0 m il TSOP II • C enter p o w e r a n d g ro u n d pin s


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    PDF 32KX16 AS7C513 AS7C3513 44-pin AS7C3513) cJQD34H AS7C513-12JC AS7C513-1SJC 05N14 AS7C3513

    CD2025

    Abstract: AS7C3513 AS7C513 AS7CS13-15TC 07LH LA014
    Text: H ig h P erfo rm a n ce 32KX16 CMOS SRAM A S7 C 5 1 3 A S 7 C 3 5 13 A 3 2 K X 1 6 C M O S SRAM Advance information Features • Organization: 3 2 ,7 6 8 w ords x 16 bits • High speed - 1 2 / 1 5 / 2 0 ns address access time - 6 / 8 / 1 0 ns output enable access tim e


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    PDF 32KX16 AS7C513 AS7C3513 44-pin AS7C3513) T00344T AS7C3513 AS7CS13-12JC CD2025 AS7CS13-15TC 07LH LA014

    line buffer

    Abstract: No abstract text available
    Text: Application Specific Fast Static RAMs Latched/Asynchronous Address MCM56824A MCM62995A MCM67A518 MCM67A618 MCM67A618A 8Kx24 . 4-3 16Kx16 . 4-72 32Kx18 . 4-92 64Kx18 . 4-103


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    PDF MCM56824A MCM62995A MCM67A518 MCM67A618 MCM67A618A 8Kx24 16Kx16 32Kx18 64Kx18 line buffer

    CY7C4255V

    Abstract: CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17
    Text: CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V V CYPRESS 32K/64Kx18 Low Voltage Deep Sync FIFOs Features Functional Description The CY7C4255/65/75/85V are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfac­ es. All are 18 bits wide and are pin/functionally compatible to


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    PDF CY7C4255V/CY7C4265V CY7C4275V/CY7C4285V 32K/64Kx CY7C4255V) CY7C4265V) CY7C4275V) CY7C4285V) 100-MHz 10-ns CY7C4255V CY7C4265V CY7C4275V CY7C4285V CY7C42X5V CY7C42X5V-ASC QO-17