EN4309
Abstract: 2SJ316
Text: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4309
2SJ316
2SJ316]
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EN4309
2SJ316
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2SK1724
Abstract: IT 7831
Text: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3819
2SK1724
2SK1724]
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2SK1724
IT 7831
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mosfet 7840
Abstract: EN3821 2SK1726
Text: Ordering number:EN3821 N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1726] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3821
2SK1726
2SK1726]
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mosfet 7840
EN3821
2SK1726
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2SJ288
Abstract: No abstract text available
Text: Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ288] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4308
2SJ288
2SJ288]
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2SJ288
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2SJ288
Abstract: marking JE
Text: Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ288] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4308
2SJ288
2SJ288]
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2SJ288
marking JE
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4309
2SJ316
2SJ316]
25max
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2SK1726
Abstract: mosfet 7840
Text: Ordering number:EN3821 N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1726] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3821
2SK1726
2SK1726]
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2SK1726
mosfet 7840
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EN3819
Abstract: 2062a 2SK1724
Text: Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1724] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3819
2SK1724
2SK1724]
25max
EN3819
2062a
2SK1724
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Untitled
Abstract: No abstract text available
Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage
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2SK1724
10//S,
250mm2X
31893TH
A8-7831
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8897
Abstract: No abstract text available
Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage
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2SJ288
10//S,
250mm2X
VQD--30V
250mA,
--500mA,
31893TH
AX-8897
8897
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2SK1724
Abstract: No abstract text available
Text: Ordering number: EN3819 _ 2SK1724 No.3819 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings atT a = 25°C Drain to Source Voltage
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EN3819
2SK1724
10//s,
250mm2
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2SJ316
Abstract: VDS101
Text: Ordering number: EN 4309 2SJ316 No.4309 P-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage
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2SJ316
10//s,
250mm2
VDS101
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TF DKL
Abstract: 2SJ288 marking JE FET g1id
Text: Ordering number : EN 430 8 2SJ288 No.4308 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b s o lu te M ax im u m R a tin g s at Ta = 25°C D rain to Source Voltage
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EN4308
2SJ288
10/iS,
250mm2X
TF DKL
marking JE FET
g1id
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Untitled
Abstract: No abstract text available
Text: 2SJ316 2062 LD L o w D rive S eries V DSs := 1 2 V P Channel Power M OSFET F e a tu re s •Low O N resistance. • Very high-speed switching. • Low-voltage drive. A b s o l u t e M a x i m u m R a t i n g s a t T a = 25°C D rain to Source Voltage V DSS
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2SJ316
--500mA
31893TH
AX-8940
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lm 7840
Abstract: ic MA 7840 A8-7840
Text: 2SK1726 4£ 2062 LD L o w D rive S eries V Dss = 6 0 V N Channel Power M OSFET '1 3 8 2 1 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage
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2SK1726
10/zs,
250mm2X
do-30V
31893TH
A8-7840
lm 7840
ic MA 7840
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