y6 zener
Abstract: 338 zener 8f zener BZX84C12LT1 zener z12 BZX84C24LT1 izt3 BZX84C18LT1 BZX84C27LT1 BZX84C36LT1
Text: ZENER DIODES - REGULATION IN SURFACE MOUNT NOMINAL ZENER 225mV BREAKDOWN VOLTAGE SOT-23 Cathode Volts Volts No Connection Plastic Case 318 To-236AB REV. : 0 2.7 BZX84C2V7LT1 MMBZ5223BLT1 3.3 BZX84C3V3LT1 MMBZ5226BLT1 5.1 BZX84C5V1LT1 MMBZ5231BLT1 6.8 BZX84C6V8LT1
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225mV
OT-23
To-236AB
MMBZ5223BLT1
BZX84C3V3LT1
MMBZ5226BLT1
BZX84C5V1LT1
MMBZ5231BLT1
BZX84C6V8LT1
MMBZ5235BLT1
y6 zener
338 zener
8f zener
BZX84C12LT1
zener z12
BZX84C24LT1
izt3
BZX84C18LT1
BZX84C27LT1
BZX84C36LT1
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BCW69LT1
Abstract: BCW70LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBCW69LT1G LBCW70LT1G 3 COLLECTOR 1 BASE 3 Featrues 2 EMITTER We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol
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LBCW69LT1G
LBCW70LT1G
236AB)
OT-23
BCW69LT1
BCW70LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon LMBT2484LT1G z Pb-Free Package is Available. Ordering Information Device Marking 3 Shipping LMBT2484LT1G 1U 3000/Tape&Reel LMBT2484LT3G 1U 10000/Tape&Reel 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS
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LMBT2484LT1G
3000/Tape
LMBT2484LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z Pb-Free Package is Available. LMBTA70LT1G Ordering Information Device Marking Shipping 3 LMBTA70LT1G M2C 3000/Tape&Reel LMBTA70LT3G M2C 10000/Tape&Reel 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6
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LMBTA70LT1G
3000/Tape
LMBTA70LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF / UFH Transistor NPN Silicon LMBT918LT1G z Pb-Free Package is Available. Ordering Information Device Marking Shipping LMBT918LT1G M3B 3000/Tape&Reel LMBT918LT3G M3B 10000/Tape&Reel 3 1 2 CASE 318–08, STYLE 6 MAXIMUM RATINGS
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LMBT918LT1G
3000/Tape
LMBT918LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching diode Pb-Free package is available LDAN202KLT1G zApplications Ultra high speed switching 3 zFeatures 1 Small mold type. 2) High reliability 1 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB) zConstruction Silicon epitaxial planar
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LDAN202KLT1G
236AB)
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09Ah
Abstract: 14-PIN
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 TO-236 CASE 318-09 ISSUE AH SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS
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OT-23
O-236)
09Ah
14-PIN
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transistor D 2395
Abstract: Motorola 2396
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit
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MMBTA13LT1
MMBTA14LT1*
236AB)
transistor D 2395
Motorola 2396
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transistor marking 3em
Abstract: MMBTH10LT1
Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit
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MMBTH10LT1/D
MMBTH10LT1
OT-23
O-236AB)
DiodesMMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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marking td sot323
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage
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MMBT6520LT1
236AB)
marking td sot323
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc
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BCW68GLT1
236AB)
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JB MARKING SOT-23
Abstract: DELTA fan bfb
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25
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MMBTH10LT1
OT-23
O-236AB)
JB MARKING SOT-23
DELTA fan bfb
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t6661
Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel
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O-236AB)
OT-23
318E-04
O-261AA)
OT-223
O-236AB
OT-23)
MMBF170LT1
BSS123LT1
2N7002LT1
t6661
ft960
marking 6Z SOT23
702 sot23
sot 23 70.2
sot-23 mosfet Marking SA s
6z sot223 marking
marking 6Z
25 marking
6z sot
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transistor D 2395
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol
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MMBTA13LT1
BTA14LT1*
OT-23
O-236AB)
b3b7255
MMBTA13LT1
MMBTA14LT1
wmb3b72SS
transistor D 2395
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ransistor PNP Silicon BCW68GLT1 COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emltter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit
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PDF
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BCW68GLT1
OT-23
O-236AB)
b3b7255
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol Value Unit VCEO -40 Vdc vebo -4.0 Vdc 'C -100 mAdc Collector Current — Continuous CASE 318-08, STYLE 6
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OT-23
O-236AB)
MMBTA70LT1
AN-569.
b3b7255
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1Ft SOT23
Abstract: SOT 23 1ft 1FT sot23-6 marking 1ft sot-23 MMBV809L MMBV809LT1 MMBV809 diode 1Ft
Text: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state reliability in replacement o f mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and Uniform Tuning Ratio
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MMBV809LT1
MMBV809LT1*
OT-23
O-236AB)
30Vdc
b3b72S5
1Ft SOT23
SOT 23 1ft
1FT sot23-6
marking 1ft sot-23
MMBV809L
MMBV809LT1
MMBV809
diode 1Ft
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Untitled
Abstract: No abstract text available
Text: MOTOROLA °rd6rNu“ *S Semiconductor Components M AX809 M AX810 SOT-23 PLASTIC PACKAGE TO-236 CASE 318 3-P in M icroprocessor Reset Monitors Features • Precision Vcc Monitor for 3.0V, 3.3V, and 5.0V Supplies • 140msec Guaranteed Minimum RESET, RESET
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AX809
AX810
OT-23
O-236)
140msec
MAX809)
OT-23
MAX809xTR
MAX810xTR
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Value Unit Collector-Emitter Voltage v CEO 40 Vdc Emitter-Base Voltage Ve b o -4 .0 Vdc 'c - 100 mAdc Symbol Rating Collector Current — Continuous MMBTA70LT1 CASE 318-07, STYLE 6 SOT-23 TO-236AA THERMAL CHARACTERISTICS Characteristic Symbol
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MMBTA70LT1
OT-23
O-236AA)
2N5086
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diode RA 225 R
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Reverse Voltage Symbol Value Unit Vr 75 35 Vdc if 100 m Adc MMBD2836LT1 MMBD2835LT1 Forward C urrent MMBD2835LT1 MMBD2836LT1 CASE 318-07, STYLE 12 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Sym bol Max Unit pd 225 mW 1.8
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MMBD2836LT1
MMBD2835LT1
MMBD2836LT1
OT-23
O-236AB)
diode RA 225 R
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor PNP Silicon MMBT5401LT1 colle3ctor Motorola Preferred Device 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -150 Vdc Collector-Base Voltage
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MMBT5401LT1
1N914
b3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11
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MMBD7000LT1/D
BD7000LT1
OT-23
O-236AB)
1-80CM41-2447
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motorola diode device data
Abstract: IV01TS
Text: SILICON EPICAP DIODE . . . designed fo r 900 MHz frequency control and tuning applications; providing solid-state re lia bility in replacem ent of mechanical tuning methods. MMBV809LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB • Controlled and U niform Tuning Ratio
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MMBV809LT1*
OT-23
O-236AB)
IV01TS)
MMBV809LT1
motorola diode device data
IV01TS
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