Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3157, Rev. • •• •• •
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Technical Data Data Sheet 3157, Rev. A • •• •• •
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GPON olt block diagram
Abstract: GPON GPON block diagram GPON ONU S3157 OLT block diagram GPON AMCC S2060 S2060 gpon optical line termination GPON OLT
Text: S3157 Product Brief GPON Transceiver With CDR PB2023_v1.00_08/25/05 The low jitter LVPECL interface is compliant with the bit-error rate requirements of the ITU-T standards. The S3157 is packaged in a 196 PBGA, offering designers a small package outline. Overview
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S3157
PB2023
S3157
OC-48/24/12
OC-48/24/12
GPON olt block diagram
GPON
GPON block diagram
GPON ONU
OLT block diagram GPON
AMCC S2060
S2060
gpon optical line termination
GPON OLT
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NTC 102
Abstract: ag 20 taiyo thermistor k25 TAIYO 85
Text: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the
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detaition1000
106kPa
NTC 102
ag 20 taiyo
thermistor k25
TAIYO 85
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epia
Abstract: CN700 VIA10 processor VIA C7 RGB-01 EPIA-M VIA Eden CLE266 via CLE266 DDR266
Text: embedded in your success VIA EPIA Mainboards Embedded Platform Innovation Architecture VIA EPIA mainboards are the embodiment of VIA’s feature rich, power efficient platform technologies, combining one of the low power embedded processors with a selection of VIA core logic, networking, connectivity and
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VT8237S
Abstract: VT1636 vt8237r HSBGA VT1625 VIA vt8237S vt8237 VT8237R PLUS VIA VT8237R plus VT1632A
Text: Compact Ultra small form factor, rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platformcentric design for higher performance per watt Industry-leading low power, fanless, silent and cool
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C0704
VT8237S
VT1636
vt8237r
HSBGA
VT1625
VIA vt8237S
vt8237
VT8237R PLUS
VIA VT8237R plus
VT1632A
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APT50GR120L
Abstract: No abstract text available
Text: APT50GR120B2_L APT50GR120B2 APT50GR120L 1200V, 50A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.
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APT50GR120B2
APT50GR120L
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9007
Abstract: demultiplexer truth table SOT323-6L st 9007 3157 spdt STG3157 STG3157CTR d 9007
Text: STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features • High speed: – tPD = 0.3 ns max at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C
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STG3157
OT323-6L
9007
demultiplexer truth table
SOT323-6L
st 9007
3157 spdt
STG3157
STG3157CTR
d 9007
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VT1620A
Abstract: vt1723 vt6113 VT1724 VT1730 VIA VT1620A VT1708S VT1620 VT1610 vt6210l
Text: Vol. 2009 Issue 1 Compact Ultra small form factor and rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platform-centric design for higher performance-per-watt Industry-leading low power,
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Untitled
Abstract: No abstract text available
Text: STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features • High speed: – tPD = 0.3 ns max at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C
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STG3157
OT323-6L
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74LVC1G3157GV
Abstract: 74LVC1G3157 003 SOT363 74LVC1G3157GW 74LVC1G3157GM
Text: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 01 — 7 February 2005 Product data sheet 1. General description The 74LVC1G3157 is a high-performance, low-power, low-voltage, Si-gate CMOS device that provides superior performance to most advanced CMOS compatible TTL families.
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74LVC1G3157
74LVC1G3157
EIA/JESD22-.
74LVC1G3157GV
003 SOT363
74LVC1G3157GW
74LVC1G3157GM
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VT8237R
Abstract: VT8235M ML6000EAG VT6122 processor VIA C7-D EX15000LG vt8237 VIA C7-D VB7001 EK8000EG
Text: 2007 VIA Embedded Mainboard Compact Ultra small form factor, rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platform-centric design for higher performance per watt Industry-leading low power,
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mar53842
B0707
VT8237R
VT8235M
ML6000EAG
VT6122
processor VIA C7-D
EX15000LG
vt8237
VIA C7-D
VB7001
EK8000EG
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APT50GR120JD30
Abstract: No abstract text available
Text: APT50GR120JD30 APT50GR120JD30 1200V, 50A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT E E The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.
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APT50GR120JD30
E145592
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Untitled
Abstract: No abstract text available
Text: APT50GR120JD30 APT50GR120JD30 1200V, 50A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT E E The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.
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APT50GR120JD30
E145592
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Untitled
Abstract: No abstract text available
Text: EKOU Vishay Roederstein Miniature Aluminum Capacitors FEATURES • Standard non-polarized series • Designed for use in circuits with reversing RoHS polarity COMPLIANT • Higher voltage ratings available up to 250 V • Load life of 2000 hours at 85 °C
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08-Apr-05
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BP 4087
Abstract: marking CODE 4407 STR Z 2757 transistor smd code marking 2406 KTY82 KTY82-210 smd transistor 1589 STR 3118 TOA 2709 transistor SMD DK
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 KTY82-2 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 05 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors
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M3D088
KTY82-2
SCA52
115106/00/03/pp16
BP 4087
marking CODE 4407
STR Z 2757
transistor smd code marking 2406
KTY82
KTY82-210
smd transistor 1589
STR 3118
TOA 2709
transistor SMD DK
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kty81 application note
Abstract: STR Z 2757 KTY81-210 3571 1210 SOD70 KTY81 STR 3118 SOD70 package Marketing Information KTY81-210 in 4008 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D053 KTY81-2 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 06 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors
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M3D053
KTY81-2
SCA52
115106/00/03/pp16
kty81 application note
STR Z 2757
KTY81-210
3571 1210
SOD70
KTY81
STR 3118
SOD70 package
Marketing Information KTY81-210
in 4008 diode
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KTY81-220 w 23
Abstract: kty81 application note KTY81-210 ,kty81 application note str 1229 STR Z 2757 SOD70 KTY81 Philips application note using kty81 KTY81-220 w
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D239 KTY81-2 series Silicon temperature sensors Product specification Supersedes data of 1998 Mar 26 2000 Aug 25 Philips Semiconductors Product specification Silicon temperature sensors KTY81-2 series DESCRIPTION
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M3D239
KTY81-2
613520/04/pp16
KTY81-220 w 23
kty81 application note
KTY81-210
,kty81 application note
str 1229
STR Z 2757
SOD70
KTY81
Philips application note using kty81
KTY81-220 w
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Untitled
Abstract: No abstract text available
Text: O M F Û fô M Â T O ! * ] intel 251236 512K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range Parameters 251236-08 251236-10 Units Accès Time from RAS tRAC 80 100 ns Access Time from CAS (tcAc) 20 25 ns Read Cycle Time (tRc) 150
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36-BIT
72-Pin
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VT8237R
Abstract: EPIA-M VB6002G VT8235M EPIA800AG ML6000EAG via vn800 PX10000G VB6002 vt8237
Text: y tx . embedded in y o u r success VIA Embedded Mainboard Compact Efficient Fanless Flexible Ultra small form factor, rich integration enabling rapid development o f intelligent devices Advanced processor architecture and platform-centric design fo r higher performance per watt
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BO704
VT8237R
EPIA-M
VB6002G
VT8235M
EPIA800AG
ML6000EAG
via vn800
PX10000G
VB6002
vt8237
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Am93425
Abstract: am93425a CL020 TC0001 AM93425A/DMC
Text: A m 93 4 15 /A m 9 34 2 5 Am93415/Am93425 1024 x 1 Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS Fully decoded 1024-word x 1-bit RAMs Ultra-high speed SA version: Address Access time 20 ns High Speed (A) version: Address Access time 30 ns Standard version:
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Am93415/Am93425
1024-word
Am93425
Am93415
3415A/415
3425A/425,
MIL-STD-883,
am93425a
CL020
TC0001
AM93425A/DMC
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Am93425
Abstract: AM93415 AM93425A
Text: Am93415/Am93425 Am93415/Am93425 1024 x 1 Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS Fully decoded 1024-word x 1-bit RAMs Ultra-high speed SA version: Address Access time 20 ns High Speed (A) version: Address Access time 30 ns Standard version:
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Am93415/Am93425
1024-word
Am93425
Am93415
3415A/415
3425A/425,
MIL-STD-883,
AM93425A
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Untitled
Abstract: No abstract text available
Text: Am93415/Am93425 A m 9 3 4 1 5 /A m 9 3 4 2 5 1024 x 1 Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS Fully decoded 1024-word x 1-bit RAMs Ultra-high speed SA version: Address Access time 20 ns High Speed (A) version: Address Access time 30 ns Standard version:
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Am93415/Am93425
1024-word
Am93425
Am83415
9341SA/41S
3425A/425,
MIL-STD-883,
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cd4064
Abstract: CD4064B S-20090R
Text: Tex a s In s t r u m e n t s CD4054B, CD4055B, C D 4056B Types Data sheet acquired from Harris Sem iconductor S C H S048 CMOS Liquid-Crystal Display Drivers Features: • Operation of liquid crystal« with CMOS CD4054B — 4-Segment Display Driver CD4055B — BCD to 7-Segment Decoder/Driver with
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CD4054B,
CD4055B,
4056B
20-Volt
CD4054B
CD4055B
CD4056B
cd4064
CD4064B
S-20090R
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