2N7002K-7
Abstract: 2N7002KQ-7 2N7002K1
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002K
380mA
310mA
AEC-Q101
DS30896
621-2N7002K-7
2N7002K-7
2N7002K-7
2N7002KQ-7
2N7002K1
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C37 diode
Abstract: ESJC37-08 C37 high voltage diode HIGH VOLTAGE DIODE 10kv 10KV ESJC37 ESJC37-05 ESJC37-10
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.
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ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
ESJC37-08
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
10KV
ESJC37-05
ESJC37-10
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C37 diode
Abstract: C37 high voltage diode HIGH VOLTAGE DIODE 10kv transistor c37 high voltage diode 100 kv 8kv DIODE ESJC37
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTEGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark
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ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 diode
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
transistor c37
high voltage diode 100 kv
8kv DIODE
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL1608T4R7M Features Item Summary 4.7 H(±20%), 240mA, 310mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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BRL1608T4R7M
240mA,
310mA,
3000pcs
240mA
310mA
150MHz
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Untitled
Abstract: No abstract text available
Text: High Power, 7/16 Din Termination 50Ω Up to 500 Watt TERM-500W-14D+ 0.7 to 7.5 GHz Maximum Ratings Features Operating Temperature -10°C to 50°C Storage Temperature -10°C to 70°C DC Supply voltage +24±2V Current for fan 310mA Permanent damage may occur if any of these limits are exceeded.
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310mA
TERM-500W-14D+
MD1561
M135192
ED-13820/1
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL1608T4R7M Features Item Summary 4.7 H(±20%), 240mA, 310mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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BRL1608T4R7M
240mA,
310mA,
3000pcs
240mA
310mA
150MHz
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Untitled
Abstract: No abstract text available
Text: DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ID TA = +25°C • Low On-Resistance • Low Input Capacitance 310mA • Fast Switching Speed 295mA • Low Input/Output Leakage • ESD Protected Description • Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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DMN62D0LFD
310mA
295mA
AEC-Q101
DS36359
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LBM2016T2R7J Features Item Summary 2.7 H(±5%), 310mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table
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LBM2016T2R7J
310mA,
2000pcs
96MHz
310mA
55MHz
30min
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAN02TA6R8J Features Item Summary 6.8 H ±5% , 310mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.6(max)x2.4(max)mm
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LAN02TA6R8J
310mA,
2000pcs
96MHz
40min
28MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S2N6C-T Features Item Summary 2.6nH(-0.2nH to +0.2nH), 310mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ0603S2N6C-T
310mA,
15000pcs
500MHz
310mA
9300MHz
13min
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N9B-T Features Item Summary 1.9nH(-0.1nH to +0.1nH), 310mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ04021N9B-T
310mA,
20000pcs
500MHz
310mA
10000MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T680K Features Item Summary 68 H(±10%), 70mA, 310mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CB2518T680K
310mA,
2000pcs
52MHz
310mA
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL1608T4R7M Features Item Summary 4.7 H(±20%), 240mA, 310mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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BRL1608T4R7M
240mA,
310mA,
3000pcs
240mA
310mA
150MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N9B-E Features Item Summary 1.9nH(-0.1nH to +0.1nH), 310mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ04021N9B-E
310mA,
40000pcs
500MHz
310mA
10000MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N9S-E Features Item Summary 1.9nH(-0.3nH to +0.3nH), 310mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ04021N9S-E
310mA,
40000pcs
500MHz
310mA
10000MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRL1608T4R7M Features Item Summary 4.7 H(±20%), 240mA, 310mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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BRL1608T4R7M
240mA,
310mA,
3000pcs
240mA
310mA
150MHz
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DMN65D8L-7
Abstract: No abstract text available
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
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DMN65D8L-7
Abstract: dmn65d8l
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
dmn65d8l
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2n7002k EQUIVALENT
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002K
380mA
310mA
AEC-Q101
DS30896
2n7002k EQUIVALENT
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TAR68K Features Item Summary 0.68 H ±10% , 310mA, 35, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm
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LAP02TAR68K
310mA,
2000pcs
35min
190MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T4R7MR Features Item Summary 4.7 H(±20%), 310mA, 1200mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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CB2518T4R7MR
310mA,
1200mA,
2000pcs
96MHz
310mA
1200mA
46MHz
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MARKING C7K
Abstract: 2N7002K-7 2n7002k EQUIVALENT
Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
2N7002K-7
2n7002k EQUIVALENT
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C37 high voltage diode
Abstract: HIGH VOLTAGE DIODE 10kv ESJC37-10 transistor C37 C37 diode ESJC37 ESJC37-05 ESJC37-08 8kv DIODE
Text: ESJC37 5kV/540mA,8kV/410mA,10kV/310mA Outline Drawings HIGH VOLTAGE DIODE (mm) Type Name, Lot No. ESJC37 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.
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Original
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PDF
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ESJC37
5kV/540mA
8kV/410mA
10kV/310mA
ESJC37
24min
24min.
ESJC37-05
ESJC37-08
ESJC37-10
C37 high voltage diode
HIGH VOLTAGE DIODE 10kv
ESJC37-10
transistor C37
C37 diode
ESJC37-05
ESJC37-08
8kv DIODE
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