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    3102 TRANSISTOR Search Results

    3102 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3102 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2605SA1

    Abstract: impulse generator HV transformer 5kv Ultrafast MOSFET Driver trzynadlowski Mohan amcc-8 20 kV generator schematic topologies pulse transformer driver IGBT APPLICATION igbt with pulse transformer driver
    Text: HIGH VOLTAGE IMPULSE GENERATOR USING HV-IGBTs∗ M. Giesselmannξ, B. Palmer, A. Neuber Texas Tech University, Center for Pulsed Power & Power Electronics Dept. of Electrical & Computer Engineering, M.S. 3102 Lubbock, TX 79409 USA J. Donlon° Powerex, Inc., 200 E. Hillis Street


    Original     		PDF EVIC420 2605SA1 impulse generator HV transformer 5kv Ultrafast MOSFET Driver trzynadlowski Mohan amcc-8 20 kV generator schematic topologies pulse transformer driver IGBT APPLICATION igbt with pulse transformer driver

    2SC4451

    Abstract: EN3102
    Text: Ordering number:EN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .


    Original     		PDF EN3102 2SC4451 500V/15mA 2010C 2SC4451] O-220AB SC-46 2SC4451 EN3102

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .


    Original     		PDF ENN3102 2SC4451 500V/15mA 2010C 2SC4451]

    2SC4451

    Abstract: ITR06967 ITR06968 ITR06969 ITR06970 ITR06971
    Text: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .


    Original     		PDF ENN3102 2SC4451 500V/15mA 2010C 2SC4451] O-220AB 2SC4451 ITR06967 ITR06968 ITR06969 ITR06970 ITR06971

    a2231

    Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
    Text: SOT23 NPN SILICON PLANAR AVALANCHE PROVISIONAL FMMT413 TRANSISTOR DATASHEET ISSUE 2- MARCH I 1 1996 FEATURES * Avalanche * 50A Peak avalanche mode operation * Low inductance current E c packaging APPLICATIONS * Laser LED drivers * Fast edge * High speed PARTMARKING


    Original     		PDF FMMT413 VF130V, FMMT413 a2231 laser LED AVALANCHE TRANSISTOR 31AA u 413 DSA003693 CCP4 VF130

    PEDALSYNC MV-64 BBD DELAY CONTROLLER DATASHEET

    Abstract: PEDALSYNC_MV-64_BBD_DELAY_CONTROLLER_DATASHEET bucket brigade devices MN3102 Molten Voltage
    Text: PedalSync BBD Delay Clock Chip MV-64 and Module v1.1 Key Features • Offset control allows users to offset the modulation waveform against the incoming clock for syncopation • Up to 360-degrees of modulation phase shift vs. incoming clock Stores and recalls Delay Time, Delay Ratio,


    Original     		PDF MV-64 360-degrees PEDALSYNC MV-64 BBD DELAY CONTROLLER DATASHEET PEDALSYNC_MV-64_BBD_DELAY_CONTROLLER_DATASHEET bucket brigade devices MN3102 Molten Voltage

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A

    HD6483102

    Abstract: magnetic stripe integrated circuit smart card emulator C TV memory ic programme
    Text: 30.03.1998 17:49 Uhr Page 1 1,1 product directory 20-021B 2901 Hitachi Brochure a/w the smart connection for silicon solutions 2901 Hitachi Brochure a/w 30.03.1998 17:50 Uhr Page 2 (1,1) silicon solutions for europe Hitachi Europe Ltd is committed to providing its


    Original     		PDF 20-021B expE731xxPC) S6-31xx E6000 H8/3102) E631xx E631xx) S5-31xx H8/3102 H8/31xx HD6483102 magnetic stripe integrated circuit smart card emulator C TV memory ic programme

    IC CD 3102

    Abstract: 2SC4451 cd 3102
    Text: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process


    OCR Scan     		PDF EN3102 2SC4451 IC CD 3102 cd 3102

    2N6839

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX


    OCR Scan     		PDF HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, 1SalE12i MIL-S-19500, MIL-STD-750 2N6839

    Untitled

    Abstract: No abstract text available
    Text: G 1 C PLESSEY JAUNARY1997 D.S.3102 3.0 SP5026 1.0 GHz 3-WIRE BUS CONTROLLED SYNTHESISER Supersedes version in October 1996 Media 1C Handbook, HB4599-1.0 * See notes on pin compatibility on page 4 f Normal ESD handling procedures should be observed c rystal[


    OCR Scan     		PDF JAUNARY1997 SP5026 HB4599-1 2N390 31-25kHz)

    lr 3103

    Abstract: D012 PW02 TMS3102LC TMS3103LC
    Text: TMS 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER TMS 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER TMS 3103 LC, NC-DUAL 64-BIT STATIC SHIFT REGISTER MOS LSI features DC to 2.5-MHz operation Low power dissipation Direct interface with DTL/TTL Static operation


    OCR Scan     		PDF 100-BIT 80-BIT 64-BIT 200-bit lr 3103 D012 PW02 TMS3102LC TMS3103LC

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y ADVANCE INFORMATION D.S.3102 3.0 SP5026 1.0 GHz 3-WIRE BUS CONTROLLED SYNTHESISER Supersedes September 1992 edition The SP5026 is a programming variant of the SP5510, allowing the design of one tuner with either l2C bus or 3-wire bus format depending on which device is inserted. The


    OCR Scan     		PDF SP5026 SP5026 SP5510, SP5026, a15-bit compari5026 SP5510 TD6380;

    HXTR-3102

    Abstract: 3104j HXTR-3104 HXTR-3002 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard
    Text: HEWLETT-PACKARD i C MP N T S 50E D D 4MM75Ö4 0D0SS3S 3 Q HEW LETT ¿ rJ l P A C K A R D T - 3 1 -3 -3 T ' 3 3 -0 5 - L in ea r P o w e r T ran sistors HXTR-3002 C hip Technical D ata HXTR-3102, TX and TXV


    OCR Scan     		PDF 4MM75Ã HXTR-3002 HXTR-3102, 2N6839 HXTR-3104, HXTR-3002 Bondin15 IS21F MIL-S-19500, HXTR-3102 3104j HXTR-3104 3002 ic equivalent 3002 TRANSISTOR equivalent 2N6839 high power transistor s-parameters HXTR-3102TXV Silicon Bipolar Transistor Hewlett-Packard

    Untitled

    Abstract: No abstract text available
    Text: Pg f l t t G E C P L E S S E Y JK S E M I C O LUIiillll N D U C T O R S IlilH D.S.3102 3.0 SP5026 1.0 GHz 3-WIRE BUS CONTROLLED SYNTHESISER Supersedes Septem ber 1992 edition The SP5026 is a programming variant of the SP5510, allowing the design of one tuner with either l2C bus or 3-wire


    OCR Scan     		PDF SP5026 SP5026 SP5510, SP5026, TD6380; TD6382. 37bflS22 -25kHz)

    shift register ttl

    Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
    Text: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L


    OCR Scan     		PDF 100-BIT 80-BIT 64-BIT 200-bit sn7400 SN74I shift register ttl A 3101 8 pin td 3101 n D021 PW02 SN74I

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    Untitled

    Abstract: No abstract text available
    Text: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation


    OCR Scan     		PDF 100-BIT 80-BIT 64-BIT 200-BIT S3101

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    D 1651

    Abstract: CSD363
    Text: CSD363 CSD363 NPN PLASTIC POWER TRANSISTOR B /W TV Horizontal Deflection Output DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3,75 3 ,88 2,29 2.79 2,54 3.43 0,56 12,70 14.73 6,35 2.03 2,92 3 1.24 7 DEG Ì4 .4 2 9,63 3,56 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CSD363 CSD363 D 1651

    Untitled

    Abstract: No abstract text available
    Text: L CSD363 CSD363 NPN PLASTIC POWER TRANSISTOR B /W TV Horizontal Deflection Output ofl DIM A 8 C E F G H J K L W N MIN MAX 16.51 10.67 4.83 0.90 1.15 1.4Q 3.88 3,75 2,29 2.79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2.92 31.24 7 OEG 14.42 9.63 3,56 A B S O L U T E M A X IM U M R A T IN G S


    OCR Scan     		PDF CSD363 CSD363

    lr 3103

    Abstract: ER6V
    Text: PNP SILICON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF ZBD953 T0126 --10mA, 50MHz -200mA 200mA, 300jis. lr 3103 ER6V

    Untitled

    Abstract: No abstract text available
    Text: CSD363 CSD363 NPN PLASTIC POWER TRANSISTOR B /W TV Horizontal Deflection Output DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3,75 3,88 2,29 2.79 2,64 3.43 0,56 12,70 14,73 6,35 2.03 2,92 31.24 7 DEG 14.42 9,63 3,56 A BSO LU TE M A XIM U M RATINGS


    OCR Scan     		PDF CSD363

    A 3131

    Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
    Text: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com­ prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise


    OCR Scan     		PDF 3120/C, 3121/C 3122/C, 3123/C, 3124/C, 3125/C 3126/C 3128/C, 3129/C 3130/C A 3131 CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125