Untitled
Abstract: No abstract text available
Text: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RQ3E130MN
E130MN
R1102A
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Untitled
Abstract: No abstract text available
Text: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).
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RQ3E150MN
RQ3E15
R1102A
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RD10UJ
Abstract: RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD39UJ
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistors equivalent
Abstract: UPC8181TB
Text: 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS UPC8181TB FEATURES DESCRIPTION • HIGH-DENSITY SURFACE MOUNTING: 6-pin super minimold package 2.0 x 1.25 x 0.9 mm The UPC8181TB is a silicon Monolithic Microwave Integrated Circuit designed as an amplifier for mobile communications.
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UPC8181TB
UPC8181TB
30x30x0
24-Hour
transistors equivalent
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RRR040P03
Abstract: 12Switch
Text: RRR040P03 Datasheet Pch -30V -4A Power MOSFET lOutline VDSS -30V RDS on (Max.) 45mW ID -4A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RRR040P03
R1120A
RRR040P03
12Switch
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Untitled
Abstract: No abstract text available
Text: TT8K2 Nch 30V 2.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 90mW ID 2.5A PD 1.25W lFeatures (8) TSST8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8).
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R1120A
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DVFN240S
Abstract: No abstract text available
Text: QS8K13 Datasheet Dual Nch 30V 6.0A Power MOSFET lOutline VDSS 30V RDS on (Max.) 28mW ID 6A PD 1.5W lFeatures TSMT8 (8) (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K13
R1120A
DVFN240S
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Untitled
Abstract: No abstract text available
Text: QS8K11 QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K11
R1120A
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Untitled
Abstract: No abstract text available
Text: RRH140P03 Pch -30V -14A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 7mW ID -14A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH140P03
R1120A
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Untitled
Abstract: No abstract text available
Text: RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 53mW ID 4A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RVQ040N05
R1120A
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Untitled
Abstract: No abstract text available
Text: RQ1E075XN Nch 30V 7.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 17mW ID 7.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.
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RQ1E075XN
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J11 Pch -12V -3.5A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 43mW ID -3.5A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT8).
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QS8J11
R1120A
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Untitled
Abstract: No abstract text available
Text: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH050P03
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8J4 Pch -30V -4A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 56mW ID -4A PD 1.5W lFeatures (8) TSMT8 (7) (6) (1) (2) (3) (5) (4) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8).
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R1102A
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Untitled
Abstract: No abstract text available
Text: TA58L05, 06, 08, 09, 10, 12, 15F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA58L05F, TA58L06F, TA58L08F, TA58L09F TA58L10F, TA58L12F, TA58L15F 250 mA Low Dropout Voltage Regulator The TA58L*F Series consists of fixed-positive-output, low-dropout
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TA58L05,
TA58L05F,
TA58L06F,
TA58L08F,
TA58L09F
TA58L10F,
TA58L12F,
TA58L15F
TA58L*
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Untitled
Abstract: No abstract text available
Text: RRQ045P03 Datasheet Pch -30V -4.5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 35mW ID -4.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RRQ045P03
R1120A
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Untitled
Abstract: No abstract text available
Text: QS8K11 Datasheet Dual Nch 30V 3.5A Power MOSFET lOutline VDSS 30V RDS on (Max.) 50mW ID 3.5A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate 2) Built-in G-S Protection Diode.
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QS8K11
R1120A
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Untitled
Abstract: No abstract text available
Text: RTQ020N05 Datasheet Nch 45V 2A Power MOSFET lOutline VDSS 45V RDS on (Max.) 190mW ID 2A PD 1.25W (6) (5) TSMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RTQ020N05
190mW
R1120A
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Untitled
Abstract: No abstract text available
Text: RSQ015N06 Datasheet Nch 60V 1.5A Power MOSFET lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RSQ015N06
290mW
R1120A
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grm36 murata
Abstract: GRM36 R04003 RR0816 TFL0510
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC8211TK
PU10426JJ04V0DS
IR260
WS260
HS350
L044-435-1573
grm36 murata
GRM36
R04003
RR0816
TFL0510
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UPC2712TB
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC3224TB
PC2712TB
PU10490JJ01V0DS
IR260
WS260
HS350
UPC2712TB
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Untitled
Abstract: No abstract text available
Text: RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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RSQ015N06
290mW
R1120A
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Untitled
Abstract: No abstract text available
Text: DC AXIAL FAN 30x30x06mm CT A x ia l F a n s SS I DC H ousing/B lade: T herm oplastic PBT, UL 94V -0 Insulation Resistance: 10M £2, 5 0 0 V D C /m in b e tw e e n b a re w ire and fram e D ie le c tric S trength: 5 m A max. 500V AC /m in b e tw e e n b a re w ire a nd fram e
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OCR Scan
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30x30x06mm
FD3006B05W
FD3006B1
2W5-71
2W7-71
2W9-71
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