Untitled
Abstract: No abstract text available
Text: SMAJ6485 thru SMAJ6491 SMAJ4460 thru SMAJ4476 Transient Voltage Suppressor Breakdown Voltage 3.3V to 30V Features CASE: SMA DO214AC Zener Voltages selection from 3.3V to 30V 1.5 Watt Zener Diodes Ideal for high-density and low-profile mounting
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SMAJ6485
SMAJ6491
SMAJ4460
SMAJ4476
DO214AC)
200mA
SMAJ6491,
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Untitled
Abstract: No abstract text available
Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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TZS4678
TZS4713
1-Jan-2006
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Untitled
Abstract: No abstract text available
Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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TZS4678
TZS4713
1-Jun-2004
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DO213
Abstract: No abstract text available
Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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TZS4678
TZS4713
Tamb75
1-Nov-2006
DO-213
DO213
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Untitled
Abstract: No abstract text available
Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
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1N4678
1N4713
1-Jan-2006
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Untitled
Abstract: No abstract text available
Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
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1N4678
1N4713
1-Nov-2006
DO-35
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GT 1083
Abstract: DS-16CSANYO "Zener Diodes" sanyo 10W ZENER DIODES 9015c DS-16C SANYO 27C zener DZB30 10c zener sanyo
Text: Ordering number :EN653F DZB6.2 to DZB30 Silicon Diffused Junction Type 1.0W Zener Diodes Features Package Dimensions • Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V unit:mm 1083 [DZB6.2 to DZB30]
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EN653F
DZB30
DZB30]
GT 1083
DS-16CSANYO
"Zener Diodes" sanyo
10W ZENER DIODES
9015c
DS-16C SANYO
27C zener
DZB30
10c zener sanyo
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Untitled
Abstract: No abstract text available
Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
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1N4678
1N4713
1-Jun-2004
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GT 1083
Abstract: 27C zener DS-16C SANYO 10c zener sanyo DZB30 "Zener Diodes" sanyo DS-16CSANYO
Text: Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features Package Dimensions • Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V unit:mm 1083 [DZB6.2 to DZB30]
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EN653F
DZB30
DZB30]
GT 1083
27C zener
DS-16C SANYO
10c zener sanyo
DZB30
"Zener Diodes" sanyo
DS-16CSANYO
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ZENER 18 2
Abstract: diode zener 1N4701 zener diode 18V 1,3 W 1N4684 zener 30V ZENER DIODE 1.8V 1N4678 1N4680 1N4681 1N4682
Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV
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1N4678
1N4713
Tamb75
100mA
ZENER 18 2
diode zener 1N4701
zener diode 18V 1,3 W
1N4684
zener 30V
ZENER DIODE 1.8V
1N4680
1N4681
1N4682
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Untitled
Abstract: No abstract text available
Text: Bulletin I0532J 09/05 IR220ZN03G, IR220ZP03G ZENER DIODES 50A, 30V Major Ratings and Characteristics Parameters Limits Unit Conditions 24 - 32 V Ir = 100mA VBR-Zener Maximum Breakdown Voltage ∆V R Delta Breakdown Voltage 2.5 V Ir = 10µA - 100mA IRR Leakage Current
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I0532J
IR220ZN03G,
IR220ZP03G
100mA
IR220ZN03G
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IR220ZN03G
Abstract: IR220ZP03G
Text: Bulletin I0532J rev. A 02/07 IR220ZN03G, IR220ZP03G ZENER DIODES 50A, 30V Major Ratings and Characteristics Parameters Limits Unit Conditions 24 - 32 V Ir = 100mA V BR-Zener Maximum Breakdown Voltage ΔV R Delta Breakdown Voltage 2.5 V Ir = 10 A - 100mA I RR
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I0532J
IR220ZN03G,
IR220ZP03G
100mA
IR220ZN03G
05ate
IR220ZN03G
IR220ZP03G
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IN4731
Abstract: No abstract text available
Text: 1N4678 C (D) THRU 1N4713(C)(D) ZENER DIODES DO-35 High reliabiility Very sharp reverse characteristic 0.080(2.00) max. Zener voltage 1.8V to 30V 1.00(25.4) MIN Vz-tolerance 5% Suffix C for 2% and D for 1% 0.166(4.20) max. Cathode identification Case: DO-35 Molded Glass
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1N4678
1N4713
DO-35
DO-35
IN4731
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XM116
Abstract: M116 M116 CALOGIC
Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
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-65oC
200oC
-55oC
125oC
10sec)
DS051
XM116
M116
M116 CALOGIC
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Zener diode smd marking 18
Abstract: zener smd diode 1w Zener diode smd marking zener diode catalog automotive zener diode U180 30g1 diode zener 1W short form catalog zener- diode
Text: Power zener Diode ST02-30G1 小型面実装デバイス 単体 Small Surface Mount Device Single Zener Diode •外観図 OUTLINE ST02-30G1 G1F Package ■特性図 CHARACTERISTIC DIAGRAMS 30V 200W 特長 ・1Wクラス ・小型SMD ・車載用途も対応可能
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ST02-30G1
25unless
Zener diode smd marking 18
zener smd diode 1w
Zener diode smd marking
zener diode catalog
automotive zener diode
U180
30g1
diode zener 1W
short form catalog
zener- diode
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Untitled
Abstract: No abstract text available
Text: 1N4728A thru 1N4751A Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: DO-204AL DO-41 Extensive Voltages selection from 3.3 to 30V Silicon 1.0 Watt Zener Diodes Hermetically sealed glass body construction Application
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1N4728A
1N4751A
DO-204AL
DO-41)
UL94V-O
MIL-STD-750,
1N4734A
1N4742A
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Untitled
Abstract: No abstract text available
Text: SMAJ4728A thru SMAJ4751A Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMA DO214AC Extensive Voltages selection from 3.3 to 30V Silicon 2.0 Watt Zener Diodes Ideal for high-density and low-profile mounting
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SMAJ4728A
SMAJ4751A
DO214AC)
90seconds
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Untitled
Abstract: No abstract text available
Text: 3EZ3.9D5 thru 3EZ30D5 Transient Voltage Suppressor Breakdown Voltage 3.9 to 30 Volts Features CASE: DO-204AL DO-41 Extensive Voltages selection from 3.9 to 30V Silicon 3.0 Watt Zener Diodes Hermetically sealed glass body construction Withstands surge stresses
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3EZ30D5
DO-204AL
DO-41)
UL94V-O
60cycle
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Untitled
Abstract: No abstract text available
Text: HSMBJ5913 thru HSMBJ5936 Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMB DO214AA Extensive Voltages selection from 3.3 to 30V Silicon 3.0 Watt Zener Diodes Ideal for high-density and low-profile mounting
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HSMBJ5913
HSMBJ5936
DO214AA)
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Untitled
Abstract: No abstract text available
Text: 2EZ3.6D5 thru 2EZ30D5 Transient Voltage Suppressor Breakdown Voltage 3.6 to 30 Volts Features CASE: DO-204AL DO-41 Extensive Voltages selection from 3.6 to 30V Silicon 2.0 Watt Zener Diodes Hermetically sealed glass body construction Withstands surge stresses
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2EZ30D5
DO-204AL
DO-41)
UL94V-O
60cycle
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Untitled
Abstract: No abstract text available
Text: SMAJ5913 thru SMAJ5936 Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMA DO214AC Extensive Voltages selection from 3.3 to 30V Silicon 3.0 Watt Zener Diodes Ideal for high-density and low-profile mounting
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SMAJ5913
SMAJ5936
DO214AC)
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mosfet zener diode
Abstract: No abstract text available
Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low I gss • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e .30V
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OCR Scan
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100jiA
10fiA,
mosfet zener diode
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DARLINGTON TRANSISTOR ARRAYS 2A
Abstract: PU4422 PU3122 PU4122
Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B
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PU3122,
PU4122,
PU4422
200mJ
PU3122:
PU4122:
DARLINGTON TRANSISTOR ARRAYS 2A
PU4422
PU3122
PU4122
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Untitled
Abstract: No abstract text available
Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier mm FEATURES ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low Ig s s • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e . 30V
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10jjA,
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