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    30V ZENER DIODE Search Results

    30V ZENER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    30V ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMAJ6485 thru SMAJ6491 SMAJ4460 thru SMAJ4476 Transient Voltage Suppressor Breakdown Voltage 3.3V to 30V Features CASE: SMA DO214AC       Zener Voltages selection from 3.3V to 30V 1.5 Watt Zener Diodes Ideal for high-density and low-profile mounting


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    PDF SMAJ6485 SMAJ6491 SMAJ4460 SMAJ4476 DO214AC) 200mA SMAJ6491,

    Untitled

    Abstract: No abstract text available
    Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


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    PDF TZS4678 TZS4713 1-Jan-2006

    Untitled

    Abstract: No abstract text available
    Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


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    PDF TZS4678 TZS4713 1-Jun-2004

    DO213

    Abstract: No abstract text available
    Text: TZS4678~TZS4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value


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    PDF TZS4678 TZS4713 Tamb75 1-Nov-2006 DO-213 DO213

    Untitled

    Abstract: No abstract text available
    Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit


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    PDF 1N4678 1N4713 1-Jan-2006

    Untitled

    Abstract: No abstract text available
    Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit


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    PDF 1N4678 1N4713 1-Nov-2006 DO-35

    GT 1083

    Abstract: DS-16CSANYO "Zener Diodes" sanyo 10W ZENER DIODES 9015c DS-16C SANYO 27C zener DZB30 10c zener sanyo
    Text: Ordering number :EN653F DZB6.2 to DZB30 Silicon Diffused Junction Type 1.0W Zener Diodes Features Package Dimensions • Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V unit:mm 1083 [DZB6.2 to DZB30]


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    PDF EN653F DZB30 DZB30] GT 1083 DS-16CSANYO "Zener Diodes" sanyo 10W ZENER DIODES 9015c DS-16C SANYO 27C zener DZB30 10c zener sanyo

    Untitled

    Abstract: No abstract text available
    Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit


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    PDF 1N4678 1N4713 1-Jun-2004

    GT 1083

    Abstract: 27C zener DS-16C SANYO 10c zener sanyo DZB30 "Zener Diodes" sanyo DS-16CSANYO
    Text: Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features Package Dimensions • Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V unit:mm 1083 [DZB6.2 to DZB30]


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    PDF EN653F DZB30 DZB30] GT 1083 27C zener DS-16C SANYO 10c zener sanyo DZB30 "Zener Diodes" sanyo DS-16CSANYO

    ZENER 18 2

    Abstract: diode zener 1N4701 zener diode 18V 1,3 W 1N4684 zener 30V ZENER DIODE 1.8V 1N4678 1N4680 1N4681 1N4682
    Text: 1N4678~1N4713 Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 1.8V to 30V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV


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    PDF 1N4678 1N4713 Tamb75 100mA ZENER 18 2 diode zener 1N4701 zener diode 18V 1,3 W 1N4684 zener 30V ZENER DIODE 1.8V 1N4680 1N4681 1N4682

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0532J 09/05 IR220ZN03G, IR220ZP03G ZENER DIODES 50A, 30V Major Ratings and Characteristics Parameters Limits Unit Conditions 24 - 32 V Ir = 100mA VBR-Zener Maximum Breakdown Voltage ∆V R Delta Breakdown Voltage 2.5 V Ir = 10µA - 100mA IRR Leakage Current


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    PDF I0532J IR220ZN03G, IR220ZP03G 100mA IR220ZN03G

    IR220ZN03G

    Abstract: IR220ZP03G
    Text: Bulletin I0532J rev. A 02/07 IR220ZN03G, IR220ZP03G ZENER DIODES 50A, 30V Major Ratings and Characteristics Parameters Limits Unit Conditions 24 - 32 V Ir = 100mA V BR-Zener Maximum Breakdown Voltage ΔV R Delta Breakdown Voltage 2.5 V Ir = 10 A - 100mA I RR


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    PDF I0532J IR220ZN03G, IR220ZP03G 100mA IR220ZN03G 05ate IR220ZN03G IR220ZP03G

    IN4731

    Abstract: No abstract text available
    Text: 1N4678 C (D) THRU 1N4713(C)(D) ZENER DIODES DO-35 High reliabiility Very sharp reverse characteristic 0.080(2.00) max. Zener voltage 1.8V to 30V 1.00(25.4) MIN Vz-tolerance 5% Suffix C for 2% and D for 1% 0.166(4.20) max. Cathode identification Case: DO-35 Molded Glass


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    PDF 1N4678 1N4713 DO-35 DO-35 IN4731

    XM116

    Abstract: M116 M116 CALOGIC
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC M116 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Low IGSS • Integrated Zener Clamp for Gate Protection Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


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    PDF -65oC 200oC -55oC 125oC 10sec) DS051 XM116 M116 M116 CALOGIC

    Zener diode smd marking 18

    Abstract: zener smd diode 1w Zener diode smd marking zener diode catalog automotive zener diode U180 30g1 diode zener 1W short form catalog zener- diode
    Text: Power zener Diode ST02-30G1 小型面実装デバイス 単体 Small Surface Mount Device Single Zener Diode •外観図 OUTLINE ST02-30G1 G1F Package ■特性図 CHARACTERISTIC DIAGRAMS 30V 200W 特長 ・1Wクラス ・小型SMD ・車載用途も対応可能


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    PDF ST02-30G1 25unless Zener diode smd marking 18 zener smd diode 1w Zener diode smd marking zener diode catalog automotive zener diode U180 30g1 diode zener 1W short form catalog zener- diode

    Untitled

    Abstract: No abstract text available
    Text: 1N4728A thru 1N4751A Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: DO-204AL DO-41    Extensive Voltages selection from 3.3 to 30V Silicon 1.0 Watt Zener Diodes Hermetically sealed glass body construction Application


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    PDF 1N4728A 1N4751A DO-204AL DO-41) UL94V-O MIL-STD-750, 1N4734A 1N4742A

    Untitled

    Abstract: No abstract text available
    Text: SMAJ4728A thru SMAJ4751A Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMA DO214AC       Extensive Voltages selection from 3.3 to 30V Silicon 2.0 Watt Zener Diodes Ideal for high-density and low-profile mounting


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    PDF SMAJ4728A SMAJ4751A DO214AC) 90seconds

    Untitled

    Abstract: No abstract text available
    Text: 3EZ3.9D5 thru 3EZ30D5 Transient Voltage Suppressor Breakdown Voltage 3.9 to 30 Volts Features CASE: DO-204AL DO-41     Extensive Voltages selection from 3.9 to 30V Silicon 3.0 Watt Zener Diodes Hermetically sealed glass body construction Withstands surge stresses


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    PDF 3EZ30D5 DO-204AL DO-41) UL94V-O 60cycle

    Untitled

    Abstract: No abstract text available
    Text: HSMBJ5913 thru HSMBJ5936 Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMB DO214AA       Extensive Voltages selection from 3.3 to 30V Silicon 3.0 Watt Zener Diodes Ideal for high-density and low-profile mounting


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    PDF HSMBJ5913 HSMBJ5936 DO214AA)

    Untitled

    Abstract: No abstract text available
    Text: 2EZ3.6D5 thru 2EZ30D5 Transient Voltage Suppressor Breakdown Voltage 3.6 to 30 Volts Features CASE: DO-204AL DO-41     Extensive Voltages selection from 3.6 to 30V Silicon 2.0 Watt Zener Diodes Hermetically sealed glass body construction Withstands surge stresses


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    PDF 2EZ30D5 DO-204AL DO-41) UL94V-O 60cycle

    Untitled

    Abstract: No abstract text available
    Text: SMAJ5913 thru SMAJ5936 Transient Voltage Suppressor Breakdown Voltage 3.3 to 30 Volts Features CASE: SMA DO214AC       Extensive Voltages selection from 3.3 to 30V Silicon 3.0 Watt Zener Diodes Ideal for high-density and low-profile mounting


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    PDF SMAJ5913 SMAJ5936 DO214AC)

    mosfet zener diode

    Abstract: No abstract text available
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low I gss • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e .30V


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    PDF 100jiA 10fiA, mosfet zener diode

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PU4422 PU3122 PU4122
    Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B


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    PDF PU3122, PU4122, PU4422 200mJ PU3122: PU4122: DARLINGTON TRANSISTOR ARRAYS 2A PU4422 PU3122 PU4122

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier mm FEATURES ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Low Ig s s • Integrated Zener Clamp for Gate Protection Drain to Source V o lta g e . 30V


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    PDF 10jjA,