F1S60P03
Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
Text: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using
|
Original
|
PDF
|
RFG60
RFP60P
RF1S60
P03SM)
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
80e-2
F1S60P03
f1s60
RF1S60P03
RF1S60P03SM
RFG60P03
RFP60P03
TB334
|
RFP60P03
Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
RFP60P03
RF1S60P03SM
RF1S60P03SM9A
RFG60P03
TB334
|
RFP60P03
Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
Original
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
RFP60P03
RF1S60P03SM
RF1S60P03SM9A
RFG60P03
TB334
IS421
|
F1S60P03
Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380
Text: RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model
|
Original
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
O-247
175oC
RF1S60P03
RF1S60P03SM
F1S60P03
RF1S60P03
RFG60P03
RFP60P03
RS-380
|
24v 60a mosfet
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60P03 Power MOSFET -60A, -30V, P-CHANNEL POWER MOSFETS DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand
|
Original
|
PDF
|
UTT60P03
UTT60P03
O-252
UTT60P03L-TN3-R
QW-R502-605
24v 60a mosfet
|
Untitled
Abstract: No abstract text available
Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Low Gate Charge Fast Switching Speed ID G 9m 60A S Description G D Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP70T03GS/P
O-263
AP70T03GP)
O-220
100ms
Fig10.
|
f1s60
Abstract: No abstract text available
Text: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
Original
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
f1s60
|
AP70T03GP
Abstract: AP70T03GS
Text: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
PDF
|
AP70T03GS/P
O-263
AP70T03GP)
O-220
100ms
Fig10.
AP70T03GP
AP70T03GS
|
Untitled
Abstract: No abstract text available
Text: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
|
Original
|
PDF
|
AP70T03AS/P
O-263
AP70T03AP)
O-220
100us
100ms
Fig10.
|
D 92 M - 02 DIODE
Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Text: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor
|
Original
|
PDF
|
KF60N06P
Fig13.
Fig14.
Fig15.
D 92 M - 02 DIODE
D 92 M - 03 DIODE
KF60N06P
c 92 M - 02 DIODE
|
AN-994
Abstract: IRL2203NL IRL2203NS
Text: PD - 95219 IRL2203NSPbF IRL2203NLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ
|
Original
|
PDF
|
IRL2203NSPbF
IRL2203NLPbF
AN-994
IRL2203NL
IRL2203NS
|
RU60P60R
Abstract: ruichips
Text: RU60P60R P-Channel Advanced Power MOSFET Features Pin Description • -60V/-60A, RDS ON =22mΩ(Typ.)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature
|
Original
|
PDF
|
RU60P60R
-60V/-60A,
RU60P60R
ruichips
|
MOSFET N-CHANNEL 60v 60A
Abstract: 60n06 60n06l
Text: UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom
|
Original
|
PDF
|
60N06
60N06
115pF
QW-R502-121
MOSFET N-CHANNEL 60v 60A
60n06l
|
IRL2203N
Abstract: mosfet p 30v 60a
Text: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A S Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
IRL2203N
O-220
O-220AB
IRL2203N
mosfet p 30v 60a
|
|
|
irl2203n
Abstract: *L2203N
Text: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A S Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
IRL2203N
O-220
irl2203n
*L2203N
|
Untitled
Abstract: No abstract text available
Text: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A S Description Advanced HEXFET® Power MOSFETs from International
|
Original
|
PDF
|
IRL2203N
O-220
|
Untitled
Abstract: No abstract text available
Text: PD - 94953 IRL2203NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V l RDS on = 7.0mΩ G ID = 116A
|
Original
|
PDF
|
IRL2203NPbF
O-220
O-220AB
|
Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti
|
OCR Scan
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
0-027Q
69e-4
33e-6
05e-9
33e-8)
80e-2
|
Untitled
Abstract: No abstract text available
Text: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
|
OCR Scan
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
RF1S60P03SM
AN7254
AN7260.
|
60p03
Abstract: PLIC
Text: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model
|
OCR Scan
|
PDF
|
RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
027S2
RF1S60P03
RF1S60P03SM
1e-30
60p03
PLIC
|
Untitled
Abstract: No abstract text available
Text: STP60NE03L-12 N - CHANNEL 30V - 0.009 i l - 60A - T0-220 STripFET POWER MOSFET TYP E S T P 6 0 N E 0 3 L -1 2 • . . . . . . . V R d S o ii Id < 0.0 1 2 Q. 60 A dss 30 V TYPICAL R D S (on) = 0.009 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
PDF
|
STP60NE03L-12
T0-220
O-220
|
75332s
Abstract: No abstract text available
Text: inter«! HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs Ultras Th e se N -C hannel pow e r M O S F E Ts are m anu facture d u sing the innovative U ltraFET process. T h is a dvanced proce ss te ch n olo gy
|
OCR Scan
|
PDF
|
HUF75332G3,
HUF75332P3,
HUF75332S3S
AN7254
AN7260.
75332s
|
irl2203n
Abstract: 24v 60a mosfet
Text: PD - 9.1366C International XOR Rectifier IRL2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 30V FÌDS on = 0.0070
|
OCR Scan
|
PDF
|
1366C
IRL2203N
O-220
C-483
C-484
irl2203n
24v 60a mosfet
|
IRL2203N equivalent
Abstract: C564 c562
Text: PD - 9.1378B International IOR Rectifier IRLI2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
|
OCR Scan
|
PDF
|
1378B
IRLI2203N
O-220
C-563
C-564
IRL2203N equivalent
C564
c562
|
