mosfet p-channel 2A
Abstract: 24V 1A mosfet
Text: LT2347 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2347 is the P-Channel logic enhancement mode power field ● -30V/-2.6A, RDS ON =85 mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● -30V/-2A, RDS(ON)=120 mΩ@VGS=-4.5V
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LT2347
LT2347
-30V/-2
-30V/-2A,
-30V/-1A,
mosfet p-channel 2A
24V 1A mosfet
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Untitled
Abstract: No abstract text available
Text: MA3304V10000000 N-Ch and P-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3304V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3304V10000000
MA3304V
D032610
3000pcs
15000pcs
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stp6
Abstract: No abstract text available
Text: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID 60V < 0.25Ω 2A ) s ( t c u d o ) r s Description ( P t c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c Applications
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STT2PF60L
OT-23-6L
OT23-6L
stp6
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IXTH2N170D2
Abstract: DS100418B
Text: IXTT2N170D2 IXTH2N170D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700
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IXTT2N170D2
IXTH2N170D2
O-268
O-247
O-247)
O-268
100ms
100ms
2N170D2
IXTH2N170D2
DS100418B
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Untitled
Abstract: No abstract text available
Text: Depletion Mode MOSFETs VDSX ID on IXTT2N170D2 IXTH2N170D2 RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700
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IXTT2N170D2
IXTH2N170D2
O-268
O-247
O-247)
100ms
2N170D2
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Untitled
Abstract: No abstract text available
Text: SID02N65SL 2A , 650V , RDS ON 4.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SID02N65SL
O-251
SID02N65SL
19-Dec
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MI3403
Abstract: iss 400 SOT233 iss-400 diode MI34 mi340
Text: MI3403 P -Channel 30 V D-S MOSFET Features General Description This miniature surface monut MOSFET uses V DS (V) = -30V advanced trench process , low R DS(on) assures minimal power loss and energy conversion , which makes this device ideal for use in power
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MI3403
OT-23
MI3403
O-236.
OT233-071012
iss 400
SOT233
iss-400 diode
MI34
mi340
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2N AND 2P-CHANNEL ENHANCEMENT
Abstract: No abstract text available
Text: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter
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AP9932GM
100us
100ms
186/W
2N AND 2P-CHANNEL ENHANCEMENT
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Untitled
Abstract: No abstract text available
Text: AP9932GM Pb Free Plating Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G LCD Monitor Inverter N1D/P1D
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AP9932GM
100us
100ms
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Untitled
Abstract: No abstract text available
Text: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information
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TSM600P03CS
TSM600P03CS
900ppm
1500ppm
1000ppm
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6N754
Abstract: No abstract text available
Text: Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description Max rDS on = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very
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FDFS6N754
FDFS6N754
6N754
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N-CHANNEL MOSFET 30V 2A SOT-23
Abstract: AP2304 A2 SOT-23 mosfet
Text: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S ▼ RoHS Compliant SOT-23 G Description
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AP2304AGN-HF
OT-23
OT-23
N-CHANNEL MOSFET 30V 2A SOT-23
AP2304
A2 SOT-23 mosfet
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qm3003
Abstract: No abstract text available
Text: MA3003V10000000 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3003V is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA3003V10000000
QM3003V
10ASH
D032610
3000pcs
15000pcs
qm3003
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Untitled
Abstract: No abstract text available
Text: SSD02N65 2A , 650V , RDS ON 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD02N65
O-252
SSD02N65
O-252
24-Nov-2011
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Untitled
Abstract: No abstract text available
Text: GF4412 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 28mΩ ID 7A H C N t E ET c R u d T NF ro P E G SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF4412
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Untitled
Abstract: No abstract text available
Text: GF9410 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 30mΩ ID 7A H C N t E ET c R u d T NF ro P E G SO-8 New TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches
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GF9410
Speciall15V
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Untitled
Abstract: No abstract text available
Text: TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain ID (A) 55 @ VGS = 10V 65 @ VGS = 4.5V 30 4 2 SCHOTTKY PRODUCT SUMMARY
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TSM414K34
TSM414K34CS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-370
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marking codes transistors SSs
Abstract: AP4002 4002p tr marking code l5 AP4002P PDTC* MARKING CODE 07
Text: AP4002S/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G BVDSS 600V RDS ON 5Ω ID 2A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP4002S/P
O-263
AP4002P)
O-220
O-220
4002P
marking codes transistors SSs
AP4002
4002p
tr marking code l5
AP4002P
PDTC* MARKING CODE 07
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TSM2NB60
Abstract: mosfet 600V 2A
Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced
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TSM2NB60
O-251
O-252
TSM2NB60CH
75pcs
mosfet 600V 2A
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lsp5526
Abstract: LSP5526-S8A 1A30V sop8l FZ 87 1500 6.3V NFR3 LSP5526-X
Text: LSP5526 2A 23V Synchronous Buck Converter Features z z z z z z z z z z z General Description 2A Output Current Wide 4.5V to 23V Operating Input Range Integrated Power MOSFET Switches Output Adjustable from 0.925V to 18V Up to 96% Efficiency Programmable Soft-Start
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LSP5526
340KHZ
LSP5526
27BSC
05BSC
LSP5526-S8A
1A30V
sop8l
FZ 87 1500 6.3V
NFR3
LSP5526-X
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GS 069 pwm
Abstract: No abstract text available
Text: Shindengen @ A m erica, Inc. 2.5V to 12V Output MD1322F DESCRIPTION Company Name The MD1322F is a high-efficiency step down DC-DC converter TAB2 28 Type No. power integrated circuit with main MOSFET switch and Schottky Barrier Diode. The MD1322F can deliver 20 watts maximum
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MD1322F
MD1322F
5030N
28-pin
GS 069 pwm
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Untitled
Abstract: No abstract text available
Text: Advanced IRFS710A Power MOSFET FEATURES BVDSS - 400 V 3.6 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-6 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA(M ax.) @ VDS = 400V
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IRFS710A
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Untitled
Abstract: No abstract text available
Text: IRFR/U310A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 -7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K
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IRFR/U310A
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