Untitled
Abstract: No abstract text available
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,
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HUF76107D3,
HUF76107D3S
HUF76
107D3,
107D3
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,
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HUF76107P3
6107P
O-220AB
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
76107P
TC298
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Untitled
Abstract: No abstract text available
Text: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses
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STSJ100NHS3LL
STSJ100NHS3LL
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Untitled
Abstract: No abstract text available
Text: STSJ100NHS3LL N-CHANNEL 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET PLUS MONOLITHIC SCHOTTKY PRELIMINARY DATA General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.004Ω 20A(1) • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Reduced switching losses
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STSJ100NHS3LL
STSJ100NHS3LL
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Untitled
Abstract: No abstract text available
Text: RS1E200GN Nch 30V 20A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.6mW RDS(on) at 4.5V (Max.) 6.1mW ID 20A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 2) High Power Package (HSOP8). (1) Source (2) Source (3) Source (4) Gate
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RS1E200GN
R1102A
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JESD97
Abstract: STSJ100NHS3LL
Text: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ100NHS3LL
JESD97
STSJ100NHS3LL
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JESD97
Abstract: STS20NHS3LL
Text: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STS20NHS3LL
JESD97
STS20NHS3LL
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JESD97
Abstract: STS20NHS3LL
Text: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STS20NHS3LL
JESD97
STS20NHS3LL
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JESD97
Abstract: STSJ100NHS3LL
Text: STSJ100NHS3LL N-channel 30V - 0.0032Ω - 20A - PowerSO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STSJ100NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STSJ100NHS3LL
JESD97
STSJ100NHS3LL
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Untitled
Abstract: No abstract text available
Text: STS20NHS3LL N-channel 30V - 0.0032Ω - 20A - SO-8 STripFET™III Power MOSFET plus monolithic schottky General features Type VDSS RDS on ID STS20NHS3LL 30V 0.0042Ω 20A(1) 1. This value is rated accordingly to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STS20NHS3LL
STS20NHS3LL
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TA49235
Abstract: 99E-1 rfd20n diode 736
Text: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI
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RFD20N03,
RFD20N03SM
RFD20N03
RFD20N03SM
TA49235.
1-800-4-HARRIS
TA49235
99E-1
rfd20n
diode 736
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IRHYS593Z30CM
Abstract: IRHYS597Z30CM 20A400
Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*
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PD-96899
O-257AA)
IRHYS597Z30CM
IRHYS597Z30CM
IRHYS593Z30CM
O-257AA
5M-1994.
O-257AA
O-257AA.
20A400
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Untitled
Abstract: No abstract text available
Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*
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PD-96899
O-257AA)
IRHYS597Z30CM
IRHYS597Z30CM
IRHYS593Z30CM
O-257AA
5M-1994.
O-257AA
O-257AA.
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Untitled
Abstract: No abstract text available
Text: FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0mΩ Features General Description ̈ Max rDS on = 4.0mΩ at VGS = 10V, ID = 20A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
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FDS8812NZ
FDS8812NZ
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: 48Vdc Input, 30Vdc@20A Output Full-brick DC-DC Converter AGF600-48S30 Description The AGF600-48S30 is a single output DC-DC converter with standard full-brick outline and pin configuration. It delivers up to 20A output current with 30V output voltage. Above 94.0%
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48Vdc
30Vdc
AGF600-48S30
AGF600-48S30
SJ/T11363-2006
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Untitled
Abstract: No abstract text available
Text: STL80NF3LL N-channel 30V - 0.0045Ω - 80A - PowerFLAT 6x5 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STL80NF3LL 30V <0.0055Ω 20A (1) 1. When mounted on FR-4 board of 1in², 2oz Cu., t<10sec • Improved die-to-footprint ratio
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STL80NF3LL
STL80NF3LL
10sec
0045Ohm
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JESD97
Abstract: K800 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
JESD97
K800
STK800
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stk8001
Abstract: K800 JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
stk8001
K800
JESD97
STK800
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stk8001
Abstract: JESD97 K800 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
stk8001
JESD97
K800
STK800
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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TA49235
Abstract: 20n03
Text: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V
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RFD20N03,
RFD20N03SM
TA49235.
TA49235
20n03
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