R6020FNJ
Abstract: No abstract text available
Text: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).
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R6020FNJ
R6020FNJ
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30V 20A 10KHz power MOSFET
Abstract: 20A igbt 1030RG 1200v 20a IGBT Pchannel 1200v 25a IGBT
Text: APS0602 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features • • • • • • • • General Description Feature 1High Noise Immunity Characterized by 35kV/µs Minimum Common Mode Rejection The APS0602 is a 2.5A Output Current Gate Drive
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APS0602
200V/20A
APS0602
JESD-22,
MIL-STD-883-3015
30V 20A 10KHz power MOSFET
20A igbt
1030RG
1200v 20a IGBT
Pchannel 1200v 25a IGBT
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Untitled
Abstract: No abstract text available
Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
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R6020-ANX
Abstract: No abstract text available
Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6020ANX
O-220FM
R1120A
R6020-ANX
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FOD3120SD
Abstract: 3120 v IGBT DRIVER FOD3120 a 3120 pin diagram optocoupler FOD3120TV 20A igbt fod3120v fod3120 applications FOD3150 control motor dc 6v
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
00V/20A
FOD3120SD
3120 v IGBT DRIVER
a 3120 pin diagram optocoupler
FOD3120TV
20A igbt
fod3120v
fod3120 applications
FOD3150
control motor dc 6v
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Untitled
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
35kV/Â
FOD3120
200V/20A
200V/20A
400ns
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FOD3150
Abstract: fod3120 FOD3150 application note 5A optocoupler FOD3120SDV IGBT/MOSFET Gate Drive FOD3120S FOD3120SD FOD3120SV FOD3120V
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
FOD3150
FOD3150 application note
5A optocoupler
FOD3120SDV
IGBT/MOSFET Gate Drive
FOD3120S
FOD3120SD
FOD3120SV
FOD3120V
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fod3120
Abstract: 1200v 20a IGBT fod3120 applications 20A igbt FOD3120TV FOD3120SD FOD3150 FOD3120SDV FOD3120V Gate Drive Optocoupler
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
FOD3120
200V/20A
200V/20A
400ns
100nsthout
1200v 20a IGBT
fod3120 applications
20A igbt
FOD3120TV
FOD3120SD
FOD3150
FOD3120SDV
FOD3120V
Gate Drive Optocoupler
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FOD3150
Abstract: No abstract text available
Text: FOD3120 High Noise Immunity, 2.5A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 35kV/µs The FOD3120 is a 2.5A Output Current Gate Drive Optocoupler, capable of driving most 1200V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3120
200V/20A
FOD3150
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Untitled
Abstract: No abstract text available
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
20kV/Â
FOD3150
00V/20A
500ns
300ns
10C/sec
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FOD3150
Abstract: FOD3120 FOD3150SD IEC60747-5-2 Gate Drive Optocoupler
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
FOD3150
00V/20A
500ns
300ns
10C/sec
FOD3120
FOD3150SD
IEC60747-5-2
Gate Drive Optocoupler
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IXDD504D2
Abstract: No abstract text available
Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps
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IXDD504/
IXDE504
1800pF
IXDD504
IXDE504
Edisonstrasse15
D-68623;
IXDD504D2
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A 3150 igbt driver
Abstract: FOD3120 30V 20A 10KHz power MOSFET FOD3150 IGBT/MOSFET Gate Drive 3150 optocoupler A 3150 opto IGBT Gate Drive Optocoupler induction heating circuits FOD3150SD
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
FOD3150
00V/20A
500ns
300ns
A 3150 igbt driver
FOD3120
30V 20A 10KHz power MOSFET
IGBT/MOSFET Gate Drive
3150 optocoupler
A 3150 opto
IGBT Gate Drive Optocoupler
induction heating circuits
FOD3150SD
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FOD3150 application note
Abstract: No abstract text available
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
20kV/Â
FOD3150
00V/20A
500ns
300ns
FOD3150 application note
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Untitled
Abstract: No abstract text available
Text: FOD3150 High Noise Immunity, 1.0A Output Current, Gate Drive Optocoupler Features Description • High noise immunity characterized by 20kV/µs The FOD3150 is a 1.0A Output Current Gate Drive Optocoupler, capable of driving most 800V/20A IGBT/MOSFET. It is ideally suited for fast switching
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FOD3150
20kV/Â
FOD3150
00V/20A
500ns
300ns
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30V 20A 10KHz power MOSFET
Abstract: IXDD504 IXDD504D2 IXDD504PI driving mosfet/igbt with pulse transformer driver IXDD504SIA IXDE504 IXDE504PI IXDE504SIA IXDD504SI
Text: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps
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IXDD504/
IXDE504
1800pF
IXDD504
IXDE504
Edisonstrasse15
D-68623;
30V 20A 10KHz power MOSFET
IXDD504D2
IXDD504PI
driving mosfet/igbt with pulse transformer driver
IXDD504SIA
IXDE504PI
IXDE504SIA
IXDD504SI
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RT8159A
Abstract: RT8159 1000w power amplifier circuit diagram 1000w power AMPLIFIER pcb circuit Linear Technology LDO PCB Layout Guidelines 1000w 12v dc regulator MOSFET FOR 10khz DRV10V mosfet power amplifier 1000w 1000w power AMPLIFIER pcb circuit layout
Text: RT8159A 12V Synchronous Buck PWM DC/DC and Linear Regulator Controller General Description Features The RT8159A is a DC/DC regulator controller specifically designed for dual outputs application in which 12V power source is available. This part consists of a synchronous
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RT8159A
RT8159A
DS8159A-02
RT8159
1000w power amplifier circuit diagram
1000w power AMPLIFIER pcb circuit
Linear Technology LDO PCB Layout Guidelines
1000w 12v dc regulator
MOSFET FOR 10khz
DRV10V
mosfet power amplifier 1000w
1000w power AMPLIFIER pcb circuit layout
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Untitled
Abstract: No abstract text available
Text: RT9259C 12V Synchronous Buck PWM DC-DC and Linear Power Controller General Description Features The RT9259C is a dual-channel DC/DC controller specifically designed to deliver high quality power where 12V power source is available. This part consists of a
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RT9259C
RT9259C
DS9259C-00
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transistor c246
Abstract: transistor c243 C246 C243 transistor IRGBF30F
Text: International l« i Rectifier PD - 9.773 IRGBF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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10kHz)
IRGBF30F
O-220AB
TQ-220AB
C-248
transistor c246
transistor c243
C246
C243 transistor
IRGBF30F
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transistor c246
Abstract: transistor c245 c245 transistor
Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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IRGBF30F
10kHz)
O-220AB
C-247
46S5455
TQ-220AB
C-248
transistor c246
transistor c245
c245 transistor
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transistor c257
Abstract: c255 c258 13 560 IRGPF30F
Text: P D -9.1026 faitemational [ÏÔR1Rectifier IRGPF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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10kHz)
IRGPF30F
O-247AC
C-260
transistor c257
c255
c258
13 560
IRGPF30F
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transistor c257
Abstract: No abstract text available
Text: P D -9.1026 International lüRectifier IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF30F
10kHz)
O-247AC
554SE
C-260
D0500S0
transistor c257
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