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    30N50 Search Results

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    30N50 Price and Stock

    Nisshinbo Micro Devices RP130N501D-TR-FE

    IC REG LINEAR 5V 150MA SOT23-5
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    DigiKey RP130N501D-TR-FE Digi-Reel 2,985 1
    • 1 $0.41
    • 10 $0.283
    • 100 $0.2178
    • 1000 $0.18377
    • 10000 $0.18377
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    RP130N501D-TR-FE Cut Tape 2,985 1
    • 1 $0.41
    • 10 $0.283
    • 100 $0.2178
    • 1000 $0.18377
    • 10000 $0.18377
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    Littelfuse Inc IXTH30N50L2

    MOSFET N-CH 500V 30A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH30N50L2 Tube 828 1
    • 1 $27.92
    • 10 $27.92
    • 100 $19.84067
    • 1000 $19.84067
    • 10000 $19.84067
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    Littelfuse Inc IXFH30N50P

    MOSFET N-CH 500V 30A TO247AD
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    DigiKey IXFH30N50P Tube 300 1
    • 1 $10.15
    • 10 $10.15
    • 100 $6.01
    • 1000 $10.15
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    RS IXFH30N50P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.25
    • 1000 $7.25
    • 10000 $7.25
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    Littelfuse Inc IXTT30N50L2

    MOSFET N-CH 500V 30A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT30N50L2 Tube 275 1
    • 1 $16.46
    • 10 $16.46
    • 100 $10.772
    • 1000 $16.46
    • 10000 $16.46
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    Newark IXTT30N50L2 Bulk 300
    • 1 -
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    • 100 -
    • 1000 $10.83
    • 10000 $10.83
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    Littelfuse Inc IXFH30N50Q3

    MOSFET N-CH 500V 30A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH30N50Q3 Tube 122 1
    • 1 $13
    • 10 $13
    • 100 $8.35933
    • 1000 $13
    • 10000 $13
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    RS IXFH30N50Q3 Bulk 8 Weeks 30
    • 1 -
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    • 100 $11.9
    • 1000 $11.9
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    Find more 30N50 price and stock on Findchips.com

    30N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-3P weight

    Abstract: ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 TO-3P weight ixys ixfh 30n50p QG SMD TRANS PLUS220SMD 123B16

    ixys ixfh 30n50p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power HiPerFET MOSFET VDSS ID25 IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS on trr = 500 V = 30 A Ω = 200 mΩ < 200 ns TO-3P (IXFQ)


    Original     		PDF 30N50P 30N50PS PLUS220 ixys ixfh 30n50p

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50

    IXFR32N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 30N50P VDSS ID25 RDS on Electrically Isolated Back Surface = 500 V = 17 A ≤ 225 mΩ Ω N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P ISOPLUS220TM E153432 405B2

    30n50

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator


    Original     		PDF 30N5002 30n50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    30N50

    Abstract: IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C


    Original     		PDF 30N50 32N50 125OC

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247 PLUS220

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS on trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N50P 30N50PS O-247 30N50P O-247

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5003 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 100 . 700 mm alignment / soiled lens indicator


    Original     		PDF 30N5003

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5002 Diffuse sensors with intensity difference dimension drawing 66 54 M30 x 1,5 SW 36 Pot LED general data photo type intensity difference light source pulsed infrared diode sensing distance Tw 300 . 1500 mm alignment / soiled lens indicator


    Original     		PDF 30N5002

    fast IXFX

    Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
    Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 30N50Q 32N50Q 247TM O-264 125OC 728B1 fast IXFX MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q

    30N50

    Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions


    Original     		PDF ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5001 Fiber optic sensors & cables dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 600 mm sensing distance Tw 110 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator


    Original     		PDF 30N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FZAM 30N5004 dimension drawing 66 54 M30 x 1,5 SW 36 LED Pot general data photo actual range Sb 1400 mm sensing distance Tw 230 mm light source pulsed infrared diode light indicator LED yellow alignment / soiled lens indicator LED, flashing


    Original     		PDF 30N5004

    32n50

    Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
    Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C


    Original     		PDF 30N50 32N50 125OC 32n50 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50

    32N50

    Abstract: 30n50
    Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C


    OCR Scan     		PDF 30N50 32N50 32N50 5A/25 6A/25