1N5 diode
Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
1N5 diode
1N5712
1N5719
1N5767
RS-296-D
5082-XXXX
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diode 5082-3080
Abstract: 5082-3080 3080 diode
Text: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C
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Untitled
Abstract: No abstract text available
Text: 5082-3080 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-3080 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I 250 mA V 100 V PDISS 250 mW @ TC = 25 OC CHARACTERISTICS SYMBOL TC = 25 OC TEST CONDITIONS
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in5719
Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching
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1N5719,
1N5767,
5082-3xxx/
1N57xx
5968-7182E
5989-3339EN
in5719
DIODE T25
5082-XXXX
5082-3001
1N5719
diode 5082-3077
diode 5082- 3039
5082-3080
1N57xx
1Nxx
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IN5767
Abstract: 1N5767
Text: PIN Diodes Reliability Data 1N5767 5082-3080 5082-3188 Description Applications For applications requiring component reliability estimation, Hewlett-Packard provides reliability data for all families of devices. Data is initially compiled from reliability tests run prior to
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1N5767
MIL-S-19500
DOD-HDBK-1686
IN5767
IN5767
1N5767
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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Untitled
Abstract: No abstract text available
Text: 5082-3080 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.4pò Carrier Lifetime (S)1.3u @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m
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5SDD31H6000
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 6000 3080 4840 40x103 1.016 0.175 Rectifier Diode V A A A V mΩ 5SDD 31H6000 PRELIMINARY Doc. No. 5SYA1183-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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31H6000
5SYA1183-00
CH-5600
5SDD31H6000
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G4AD26
Abstract: free download led wiring guide G4-DA7 80C196 users manual nokia 1200 circuit diagram rs232 connector pin out wiegand modbus circuit M3476 Wiring Diagram RPM led module 80C196
Text: M4RTU/M4IO USER’S GUIDE Form 0676-100301—March 2010 43044 Business Park Drive • Temecula • CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services 800-TEK-OPTO (835-6786) or 951-695-3080
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0676-100301--March
800-321-OPTO
800-832-OPTO
opto22
800-TEK-OPTO
G4AD26
free download led wiring guide
G4-DA7
80C196 users manual
nokia 1200 circuit diagram
rs232 connector pin out wiegand
modbus circuit
M3476
Wiring Diagram RPM led module
80C196
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nokia 2700 classic circuit diagram
Abstract: ma6541 circuit diagram of nokia 101 Ericsson BBS g4 oac5a OAC5A OPTO22 AD3T transistor ac51 condor power supply circuit diagram nokia ac adapter
Text: PAMUX USER’S GUIDE Form 726-080118 — January, 2008 43044 Business Park Drive, Temecula, CA 92590-3614 Phone: 800-321-OPTO 6786 or 951-695-3000 Fax: 800-832-OPTO (6786) or 951-695-2712 www.opto22.com Product Support Services: 800-TEK-OPTO (835-6786) or 951-695-3080
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800-321-OPTO
800-832-OPTO
opto22
800-TEK-OPTO
nokia 2700 classic circuit diagram
ma6541
circuit diagram of nokia 101
Ericsson BBS
g4 oac5a
OAC5A OPTO22
AD3T
transistor ac51
condor power supply circuit diagram
nokia ac adapter
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Untitled
Abstract: No abstract text available
Text: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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21F1400
5SYA1023-05
21F1400
CH-5600
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CA 3080 E
Abstract: TXV-3080 3080 diode TXB-3080
Text: HEWLETT-PACKARD^ C M PN TS EGE D 444 7 5Ô 4 0 0 0 S 7 7 3 fl H IG H R E L IA B IL IT Y fT L J Ì H E W L E T T ti!K J P A C K A R D P IN A T T E N U A T O R D IO D E S Generic 5082-3080 TX-3080 TXB-3080 TXV-3080 TXVB-3080 T '0 * 7 -l£ ?. .
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MIL-S-19500
TX-3080
TXB-3080
TXV-3080
TXVB-3080
80VPk.
CA 3080 E
3080 diode
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1N SERIES DIODE
Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
1N SERIES DIODE
diode 5082-3080
2000Q
1N5957SERIES
unitrode diode
iN5957
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Untitled
Abstract: No abstract text available
Text: Whp\ HEWLETT mL'liâ PACKARD PIN Diodes Reliability Data 1N5767 5082-3080 5082-3168 5082-3188 D escription Applications For applications requiring component reliability estima tion, Hewlett-Packard provides reliability data for all families of devices. Data is initially com
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1N5767
MIL-S19500
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IN5767
Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Text: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT
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1N5719
1N5767
HPND-4165/66
HPND-4166.
IN5767
HP 5082-3081
HPND-4165
EN 4165
5082-3042
HPND-4166
IN5719
RS-296-D
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Untitled
Abstract: No abstract text available
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
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diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
diode 5082-3080
5082-3080
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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HPND-4165/66Â
1N5719)
1N5767)
curr080,
IN5719
HP 5082-3081
diode 5082-3168
HPND-4165
HP 5082-3168
vhf antenna mtbf
hp 3042
1N5767
5082-3168
diode 5082-3001
5082-3042
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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G40DC5MA
Abstract: G4-DA5 G4AD18 G4-DA7 G40AC5MA G4D16L ellipse 300 ge UPS circuit diagram G40AC5 relay 12vdc coil RS-232 to RS485 converter k2 ADE
Text: Form 532-9508015— August 1995 O P T O 2 2 43044 Business Park Drive • Temecula, CA 92590-3614 . Phone: 800/321-OPTO 6786 or 909/695-3000 Fax: 800/832-0PTO (6786) or 909/695-2712 Internet Web site: http://www.opto22.com Product Support Services: 8QO/TEK-OPTO (835-6786) or 909/695-3080
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800/321-OPTO
800/832-0PTO
opto22
G40DC5MA
G4-DA5
G4AD18
G4-DA7
G40AC5MA
G4D16L
ellipse 300 ge UPS circuit diagram
G40AC5
relay 12vdc coil
RS-232 to RS485 converter k2 ADE
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