Untitled
Abstract: No abstract text available
Text: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and
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IS42S46400A
IS42S83200A
IS42S16160A
16-bit)
IS42S46400A
216-word
IS42S83200A
608-word
IS42S16160A
304-word
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Untitled
Abstract: No abstract text available
Text: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and
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Original
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PDF
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IS42S46400A
IS42S83200A
IS42S16160A
16-bit)
IS42S46400A
216-word
IS42S83200A
608-word
IS42S16160A
304-word
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p2v56s
Abstract: No abstract text available
Text: 256Mb Synchronous DRAM Specification P2V56S20BTP P2V56S30BTP P2V56S40BTP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 256Mb Synchronous DRAM 256Mb Synchronous DRAM
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256Mb
P2V56S20BTP
P2V56S30BTP
P2V56S40BTP
216-WORD
608-WORD
p2v56s
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Untitled
Abstract: No abstract text available
Text: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and
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Original
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PDF
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IS42S46400A
IS42S83200A
IS42S16160A
16-bit)
IS42S46400A
216-word
IS42S83200A
608-word
IS42S16160A
304-word
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Untitled
Abstract: No abstract text available
Text: IS42S46400A 4-bank x 16,777,216 - word x 4-bit IS42S83200A (4-bank x 8,388,608 - word x 8-bit) IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM AUGUST 2004 DESCRIPTION IS42S46400A is organized as 4-bank x 16,777,216-word x 4-bit Synchronous DRAM with LVTTL interface and
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Original
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PDF
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IS42S46400A
IS42S83200A
IS42S16160A
16-bit)
IS42S46400A
216-word
IS42S83200A
608-word
IS42S16160A
304-word
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Untitled
Abstract: No abstract text available
Text: TMS44100, TMS44100P 4194304-BIT DYNAMIC RANDOM-ACCESS MEMORY SMHS410F-SEPTEMBER 1989-REVISED DECEMBER 1992 Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS SD P AC K A G E t (TOP VIEW) DJ P A C K A G E t (TOP VIEW) Organization . . . 4194 304 x 1
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OCR Scan
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TMS44100,
TMS44100P
4194304-BIT
SMHS410F-SEPTEMBER
1989-REVISED
TMS44100/P-60
TMS44100/P-70
TMS44100/P-80
A0-A10
TMS44100
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.
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OCR Scan
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PDF
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PD4216400
/JPD4216400,
26-pin
PD4216400-50
bM2755S
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ic 4194 notes with IC diagram
Abstract: RAS24
Text: SMJ417400 4 194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS044-NQVEMBER 1992 Organization . . . 4 194 304 FNC PA C K A G Et 4 x TO P V IE W Single 5-V Power Supply (10% Tolerance) VCC D NC W RAS A11 Performance Ranges: READ ACCESS AC CESS ACCESS
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OCR Scan
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PDF
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SMJ417400
304-WORD
SGMS044-NQVEMBER
SMJ417400-60
SMJ417400-70
SMJ417400-80
SMJ417400-10
ic 4194 notes with IC diagram
RAS24
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TM497EU9
Abstract: TMS417400DJ simm 30-pin 9-bit 30 pin 9-bit simm memory 30-pin simm memory 30-pin SIMM 30-pin 9-bit ram module SIMM 30-pin
Text: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE f ♦ s S M M S 49 9- FEBRUARY 1994 Organization . . . 41943 04 x 9 U SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use W ith Sockets
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OCR Scan
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TM497EU9
4194304-WORD
SMMS499-
30-Pin
16-Megabit
497EU9-60
497EU9-70
497EU9-80
TM497EU9
304-WORD
TMS417400DJ
simm 30-pin 9-bit
30 pin 9-bit simm memory
30-pin simm memory
30-pin SIMM
30-pin 9-bit ram module
SIMM 30-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.
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/iPD42S16400L,
4216400L,
42S17400L,
PD42S16400L,
4217400L
uPD42S16400L
42S17400L
26-pin
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nec 4217400
Abstract: 4217400 upd4217400
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿ PD4216400, 4217400 are 4 194 304 w o rd s by 4 b its d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP (II and 26-pin plastic SOJ.
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OCR Scan
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PDF
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uPD4216400
uPD4217400
PD4216400,
26-pin
/PD4216400-50
//PD4217400-50
/PD4216400-60
PD4217400-60
/iPD4216400-70
nec 4217400
4217400
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Untitled
Abstract: No abstract text available
Text: SMJ44100 4194 304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS040B-JANUARY 1991-REVISED JULY 1991 JD PACKAGET TOP VIEW Processed to MIL-STD-883, Class B Military Temperature Range. . . -5 5 °C to 125°C D C w C Organization . . . 4 194 304 x 1 Performance Ranges:
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OCR Scan
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PDF
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SMJ44100
304-WORD
SGMS040B-JANUARY
1991-REVISED
MIL-STD-883,
SMJ44100-80
SMJ44100-10
SMJ44100-12
PACKAG7001
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Untitled
Abstract: No abstract text available
Text: TMS46100, TMS46100P 4194 304-WORD BY 1-BIT LOW-VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES SMHS461-DECEMBER 1992 ACCESS ACCESS ACCESS TIME ‘ RAC (MAX) TMS46100/P-70 * * * * * * * * READ TIME TIME OR WRITE (tCAC) (MAX) (tAA) (MAX) CYCLE (MIN) 130 ns 70 ns 18 ns
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OCR Scan
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PDF
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TMS46100,
TMS46100P
304-WORD
SMHS461-DECEMBER
TMS46100P)
TMS46100/P-70
TMS46100/P-80
TMS46100/P-10
SMHS461-DECEMBER1992
TMS46100
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Untitled
Abstract: No abstract text available
Text: TMS417400 4194 304-WDRD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS740A-JULY 1991-REVISED DECEMBER 1992 This data sheet is applicable to all TMS417400s symbolized with Revision “A " and subsequent revisions as described on page 23. V CC : 1 DQ1 c 2 DQ2 c 3
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OCR Scan
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PDF
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TMS417400
304-WDRD
SMKS740A-JULY
1991-REVISED
TMS417400s
TMS416400-60
TMS416400-70
TMS416400-80
304-WORD
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777T7
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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/iPD4216405
//PD4216405
26-pin
cycles/64
J/PD4216405-50
/xPD42O
0161o
b427525
20too5
777T7
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The //PD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page
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PDF
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//PD42S16405L,
4216405L
/iPD42S16405L,
26-pin
/iPD42S16405L-A60,
4216405L-A60
1PD42S16405L-A70,
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42S17405
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT ju P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16 M BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /iPD42S17405, 4217405 are 4 194 304 w o rd s by 4 bits CMOS d yn a m ic R AM s w ith o p tio n a l h y p e r page
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OCR Scan
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PDF
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uPD42S17405
uPD4217405
fjPD42S17405,
26-pin
/jPD42S
fiPD42S
S26LA-300A
0081o
42S17405
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Untitled
Abstract: No abstract text available
Text: SMJ416400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SGMS042A-MARCH 1992-RE VISED NOVEMBER 1992 Organization . . . 4 194 304 x 4 FNC PACKAGEÎ TOP VIEW Single 5-V Power Supply (10% Tolerance) Performance Ranges: SMJ416400-60 SMJ416400-70 SMJ416400-80
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OCR Scan
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PDF
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SMJ416400
304-WORD
SGMS042A-MARCH
1992-RE
SMJ416400-60
SMJ416400-70
SMJ416400-80
SMJ416400-10
AO-11
SMJ416400
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4194
Abstract: 3A414 A10C tms417400
Text: TMS41610016 777 216-BIT TMS416400 4194 304-WORD BY 4-BIT TMS417400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM ACCESS MEMORIES SMKS003-DECEMBER 1992 3-State Unlatched Output This Product Preview is Applicable to All TMS416100/P, TMS416400/P, and TMS417400/P Devices Symbolized With
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OCR Scan
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PDF
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TMS41610016
216-BIT
TMS416400
304-WORD
TMS417400
SMKS003-DECEMBER
TMS416100/P,
TMS416400/P,
TMS417400/P
4194
3A414
A10C
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Untitled
Abstract: No abstract text available
Text: TMS416400 4194 304-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY REV A — SMKS640 — JANUARY 1991 DZ Package T o p V ie w < o o Single 5-V Power Supply (10% Tolerance) Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE tRAC *CAC *AA CYCLE
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OCR Scan
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PDF
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TMS416400
304-WORD
SMKS640
KS640
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TMS44100DJ
Abstract: No abstract text available
Text: TM497EAD9B 4 194 304-WQRD BY 9-BIT DYNAMIC RAM MODULE S M M S 4 7 9 -D E C E M B E R 1992 Organization. . . 4194 304 x 9 AO SINGLE-IN-LINE P AC KA G Et TOP VIEW 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets V cc CAS DQ1 A0 A1 DQ2 A2 A3
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OCR Scan
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PDF
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TM497EAD9B
304-WQRD
30-Pin
16-Megabit
TM497EAD9B-60
TM497EAD9B-70
TM497EAD9B-80
TM497EAD9B-10
497EAD9B-70
497EAD9B-80
TMS44100DJ
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ras 0910
Abstract: 30021
Text: SMJ44100 4 194 304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORY S G M S 040S — JANUARY 1991 — R E VIS ED JULY 1991 MIL-STD-883C, Class B, High-Reliability Processing JD Package Top View Military Temperature Range . . . - 55°C to 125°C D W RAS Organization . . . 4 194 304 x 1
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OCR Scan
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PDF
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SMJ44100
304-WORD
SGMS040S
MIL-STD-883C,
SMJ44100-80
SMJ44100-1
SMJ44100-12
SMJ44100
SGMS040B
ras 0910
30021
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nec 424100
Abstract: PD424100-70L
Text: NEC MOS INTEGRATED CIRCUIT juPD424100, 424100-L 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The /iPD424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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uPD424100
uPD424100-L
/iPD424100,
424100-L
26-pin
20-pin
/iPD424100-60
PD424100-70
iPD424100-80
nec 424100
PD424100-70L
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upd424100
Abstract: d424100 upd424100la nec vw rcd 300 nec 424100 UPD424100GS
Text: F L.427525 DGHlfil? 301 H N E C E AT A SHEET NEC MOS INTEGRATED CIRCUIT PD424100 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The //PD424100 ¡s a 4 194 304 w ords by 1 bit dynam ic CMOS RAM. The fast page mode capability realize high speed access and low power consum ption.
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PDF
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uPD424100
//uPD424100
26-pin
20-pin
uPD424100-60
/iuPD424100-70
uPD424100-80
iuPD424100-10
190process
d424100
upd424100la
nec vw rcd 300
nec 424100
UPD424100GS
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