SPP80P06PIN-ND
Abstract: BSS84P-L6327 BSS138N-L6327 IPD06N03LAG BSC042N03LSG IPD060N03LG BSS138N L6327 BSS123L6327 BSS138N SPP15P10PIN-ND
Text: Mosfets Cont. OptiMOS 2 Package Type ® Vds (V) TO-220AB N-CH 25 30 TO-220 N-CH 100 600 TO-220-3 N-CH 100 TO-251 N-CH 25 TO-262AB N-CH 25 D2-PAK N-CH 25 25 TO-252 N-CH 30 D-PAK N-CH 25 Bent up Leads DSO-8 N-CH 30 SUPERSO8 N-CH 30 25 TDSON-8 N-CH 30 25
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O-220AB
O-220
O-220-3
O-251
O-262AB
O-252
O-263
SPB80P06P
SPB10N10L
SPB80N10L
SPP80P06PIN-ND
BSS84P-L6327
BSS138N-L6327
IPD06N03LAG
BSC042N03LSG
IPD060N03LG
BSS138N L6327
BSS123L6327
BSS138N
SPP15P10PIN-ND
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BUK2114
Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
Text: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A
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OT223)
BUK6213-30A
BUK9213-30A
BUK7604-40A
BUK9604-40A
OT404)
OT428)
BUK7605-30A
BUK9605-30A
OT226
BUK2114
IRF540 n-channel MOSFET BATTERY CHARGER
SMPS CIRCUIT DIAGRAM tea1506p
tea1507
TEA1620
BUK2914-50SYTS
BUK2114-50SYTS
BU4508DX equivalent
BU4522AX
BUK2914
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2SA1663
Abstract: 2sa166 2SA1663U
Text: ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current
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2SA1663U
OT-89
2SA1663
2sa166
2SA1663U
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SC6210
Abstract: MRC325 PBSS4330X MRC323 MRC326 MRC322 MRC327
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 28 2004 Dec 06 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor
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M3D109
PBSS4330X
SC-62)
SCA76
R75/03/pp12
SC6210
MRC325
PBSS4330X
MRC323
MRC326
MRC322
MRC327
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equivalent transistor c 243
Abstract: PBSS4330X PBSS5330X PBSS5350X MDB907
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 15 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5330X
SC-62)
SCA75
R75/02/pp11
equivalent transistor c 243
PBSS4330X
PBSS5330X
PBSS5350X
MDB907
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MRC327
Abstract: MRC325 MRC323 MRC324 PBSS4350x PBSS4330X PBSS5330X MRC322
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jul 14 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor
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M3D109
PBSS4330X
SC-62)
SCA75
R75/02/pp11
MRC327
MRC325
MRC323
MRC324
PBSS4350x
PBSS4330X
PBSS5330X
MRC322
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SC6210
Abstract: PBSS5330X MLE372 FIG11
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 28 2004 Nov 03 Philips Semiconductors Product specification 30 V, 3 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5330X
SC-62)
SCA76
R75/03/pp12
SC6210
PBSS5330X
MLE372
FIG11
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X
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M3D109
PBSS4330X
SC-62)
R75/03/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Nov 03 NXP Semiconductors Product data sheet 30 V, 3 A PNP low VCEsat (BISS) transistor PBSS5330X
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M3D109
PBSS5330X
SC-62)
R75/03/pp12
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STX112
Abstract: 2STN1360 2STF1360 STF724 STN724 STN749 STN790A STN826 STN851 STN888
Text: SOT-223/SOT23-6L/SOT-89 Device type NPN VCEO [V] PNP STF724 STN724* STN851* 2STN1360 * 2STF1360 STN1802 * STF715 STN715* STFN42 STN749 * STT818B* STF826 STN826* STN790A* STN888* STF817A STN817A* * SOT-223 package VCBO VCES VCEV [V] IC [A] 25 35 3 30 30 3
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OT-223/SOT23-6L/SOT-89
STF724
STN724*
STN851*
2STN1360
2STF1360
STN1802
STF715
STN715*
STFN42
STX112
2STN1360
2STF1360
STF724
STN724
STN749
STN790A
STN826
STN851
STN888
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Untitled
Abstract: No abstract text available
Text: ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V IC 1.5 A Total Power Dissipation
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2SC4375U
OT-89
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SC6210
Abstract: MRC327 PBSS4330X
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors Product data sheet 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X
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M3D109
PBSS4330X
SC-62)
R75/03/pp12
SC6210
MRC327
PBSS4330X
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PBSS5330X
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Nov 03 NXP Semiconductors Product data sheet 30 V, 3 A PNP low VCEsat (BISS) transistor PBSS5330X
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M3D109
PBSS5330X
SC-62)
R75/03/pp12
PBSS5330X
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CM2830SIM89
Abstract: CM2830VIM89 CM2830 CM2830AIM23 CM2830AIM25 CM2830AIM89 CM2830AIN92 CM2830DIM23 CM2830DIM25 CM2830DIN92
Text: CM2830/CM2830A 300mA CMOS LDO GENERAL DESCRIPTION FEATURES The CM2830/CM2830A family is a positive voltage linear ! Very Low Dropout Voltage regulator developed utilizing CMOS technology featured low ! Low Current Consumption: Typ. 30µA, Max. 35µA quiescent current 30µA typ. , low dropout voltage, and high
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CM2830/CM2830A
300mA
CM2830/CM2830A
OT-23-3,
OT-23-5,
OT-89
OT-23
OT-25
OT-89
CM2830SIM89
CM2830VIM89
CM2830
CM2830AIM23
CM2830AIM25
CM2830AIM89
CM2830AIN92
CM2830DIM23
CM2830DIM25
CM2830DIN92
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Untitled
Abstract: No abstract text available
Text: CM2862 600mA CMOS LDO GENERAL DESCRIPTION FEATURES The CM2862 family is a positive voltage linear regulator ! Very Low Dropout Voltage developed utilizing CMOS technology featured low quiescent ! Low Current Consumption: Typ. 30µA, Max. 35µA current 30µA typ. , low dropout voltage, and high output
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CM2862
600mA
CM2862
OT-89
OT-89
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CM2862
Abstract: CM2862KIM89 CM2862SIM89 LDO SOT89 vin 30v
Text: CM2862 600mA CMOS LDO GENERAL DESCRIPTION FEATURES The CM2862 family is a positive voltage linear regulator ! Very Low Dropout Voltage developed utilizing CMOS technology featured low quiescent ! Low Current Consumption: Typ. 30µA, Max. 35µA current 30µA typ. , low dropout voltage, and high output
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CM2862
600mA
CM2862
OT-89
OT-89
CM2862KIM89
CM2862SIM89
LDO SOT89 vin 30v
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5. VOUT 3. GND 4. VIN SOT-23-5 LDO
Abstract: LDO 3.3V 300MA SOT-89 CM2830VIM89 CM2830 CM2830AIM23 CM2830AIM25 CM2830AIM89 CM2830AIN92 CM2830DIM23 CM2830DIM25
Text: CM2830/CM2830A 300mA CMOS LDO GENERAL DESCRIPTION FEATURES The CM2830/CM2830A family is a positive voltage linear ! Very Low Dropout Voltage regulator developed utilizing CMOS technology featured low ! Low Current Consumption: Typ. 30µA, Max. 35µA quiescent current 30µA typ. , low dropout voltage, and high
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CM2830/CM2830A
300mA
CM2830/CM2830A
OT-23-3,
OT-23-5,
OT-89
5. VOUT 3. GND 4. VIN SOT-23-5 LDO
LDO 3.3V 300MA SOT-89
CM2830VIM89
CM2830
CM2830AIM23
CM2830AIM25
CM2830AIM89
CM2830AIN92
CM2830DIM23
CM2830DIM25
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4011 philips
Abstract: PNP DARLINGTON SOT-23 PXTA14 BF840 pinout of IC 4011 PMBTA64 df SOT-223 BST50 PMBTA14 BSP50
Text: N AM E R PHILIPS/DISCRETE ESE 3> • bbS3T31 OGlbEBT 5 ■ "P-2 7 - 0 I Surface M ount Devices DARLINGTON TRANSISTORS ft* 1 PINOUT SEE SECTION VI PMBTA13 PZTA13 PMBTA14 PXTA14 PZTA14 SOT-23 SOT-223 SOT-23 SOT-89 SOT-223 20 20 30 30 30 30 30 30 30 30 300 300
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OCR Scan
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PDF
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PMBTA13
OT-23
PZTA13
OT-223
PMBTA14
PXTA14
OT-89
PZTA14
4011 philips
PNP DARLINGTON SOT-23
BF840
pinout of IC 4011
PMBTA64
df SOT-223
BST50
BSP50
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SMD MARKING CODE 02
Abstract: CU02 smd code marking ha SMD MARKING CODE 10 SMD marking code 60 SMD code ha smd marking code sot-89
Text: SMD Cenerai Purpose Rectifier SMB Case NEW! m v F c l0 V rrm Ifsm TYPE N a AMPS MAX (VOLTS) MAX (AMPS) MAX ( m^A) MAX Ir @ V rrm (VOLTS) MAX (VOLTS) MAX (AMPS) MARKING CODE CMR1-02 CMR1-04 CMR1-06 CMR1-10 1.0 10 10 1.0 200 400 600 1000 30 30 30 30 10 10
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OCR Scan
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PDF
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CMR1-02
CMR1-04
CMR1-06
CMR1-10
CMR1U-01
CMR1U-02
CMR1U-04
CLLSH1-20
CLLSH1-40
CLLSH1-60
SMD MARKING CODE 02
CU02
smd code marking ha
SMD MARKING CODE 10
SMD marking code 60
SMD code ha
smd marking code sot-89
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2F SMD CODE MARKING
Abstract: 2F SMD MARKING CODE 2F1010 smd code 9u
Text: SMD Leodless cenerai purpose Rectifier m e l f Case NEW ! @5 TYPE NO. *o AMPS MAX (VOLTS) MAX Msm (AMPS) MAX (p-A) MAX CLLR1-02 CLLR1-04 CLLR1-06 CLLR1-10 1.0 1.0 1.0 1.0 200 400 600 1000 30 30 30 30 10 10 10 10 V rrm Ir v nRM (VOLTS) vF (VOLTS) MAX 200
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OCR Scan
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PDF
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CLLR1-02
CLLR1-04
CLLR1-06
CLLR1-10
CLLR1F-02
CLLR1F-06
CLLR1F-10
CLLR1U-02
CLLR1U-04
CLLSH1-20
2F SMD CODE MARKING
2F SMD MARKING CODE
2F1010
smd code 9u
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Untitled
Abstract: No abstract text available
Text: ASSPs Pow er S upply ICs •High precision voltage regulator Output voltage percision:±2.5% Part number Output voltage (V-typ.) Output current (mA-typ.) SCI7810YFA 2.2 10 (Vl=3V) SCI7810YLA 2.6 30 (Vl=5V) SCI7810YRA 2.8 30 (Vi=5V) SCI7810YDA 3.0 30 (Vl=5V)
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OCR Scan
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PDF
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SCI7810YFA
SCI7810YLA
SCI7810YRA
SCI7810YDA
SCI781
SCI7810YTA
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Untitled
Abstract: No abstract text available
Text: SMD Leodless cenerai Purpose Rectifier m e l f case T Y P E NO. NEW! C LLR1-02 C LLR1-04 C LLR1-06 CLLRM O !o A M P S MAX V rrm (V O LTS) MAX Ifs m (A M P S ) MAX Ir (nA) MAX 1.0 1.0 200 400 600 1000 30 30 30 30 10 10 10 10 1.0 1.0 @0 (VOLTS) VF (VOLTS)
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OCR Scan
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PDF
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LLR1-02
LLR1-04
LLR1-06
LLR1F-02
LLR1F-06
LLR1F-10
OT-89
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mpsa42 "sot23"
Abstract: MPSA42 sot-223 siemens bfp22
Text: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN
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OCR Scan
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PDF
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BC847S
BC847PN
BC857S
OT363
OT363
OT223
mpsa42 "sot23"
MPSA42 sot-223
siemens bfp22
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e10s
Abstract: M1043 E10QS03 Schottky Diode SOT-89 E10QS04 Schottky Barrier Diode SOT-89
Text: SCHOTTKY BARRIER DIODE i.ia /30~40v eioqso 3 eioqso 4 FEATURES ° Similar to TO-243AB SOT-89 Case ° Surface Mount Device ° Low Forward Voltage Drop “ Low Power Loss, High Efficiency ° High Surge Capability “ 30 Volts through 100 Volts Types Available
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OCR Scan
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PDF
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ia/30
O-243AB
OT-89)
0631MAX
E10QS03
E10QS04
15X15mm)
e10s
M1043
E10QS03
Schottky Diode SOT-89
E10QS04
Schottky Barrier Diode SOT-89
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