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    30 PIN SIP DRAM MEMORY Search Results

    30 PIN SIP DRAM MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    30 PIN SIP DRAM MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AK584096AS

    Abstract: AK584096AG
    Text: AK584096AS / AK584096AG 4,194,304 x 8 Bit CMOS Dynamic Random Access Memory ACCUTEK DESCRIPTION MICROCIRCUIT CORPORATION Front View The Accutek AK584096 high density memory module is CMOS DRAM organized in 4 Meg x 8 bit words. The assembly consists of eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted


    Original     		PDF AK584096AS AK584096AG AK584096 30-Pin outp096ASP-80 AK584096AGN-70 AK584096AG

    30 pin SIP dram memory

    Abstract: AK581024 AK5816384 AK58256 AK584096 AK584096AG AK584096AS
    Text: DESCRIPTION Accutek Microcircuit Corporation AK584096AS / AK584096AG 4,194,304 x 8 Bit CMOS Dynamic Random Access Memory Front View The Accutek AK584096 high density memory module is CMOS DRAM organized in 4 Meg x 8 bit words. The assembly consists of eight standard 4 Meg x 1 DRAMs in plastic SOJ packages mounted


    Original     		PDF AK584096AS AK584096AG AK584096 30-Pin AK584096AGN-70 30 pin SIP dram memory AK581024 AK5816384 AK58256 AK584096AG

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh


    OCR Scan     		PDF MT2D2568 30-pin 350mW 512-cycle MT2D2568)

    MT8C

    Abstract: No abstract text available
    Text: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state


    OCR Scan     		PDF MT8C9026 30-pin 1575mW MT8C

    30-pin simm memory

    Abstract: No abstract text available
    Text: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state


    OCR Scan     		PDF MT8C8026 30-pin 1575mW 30-pin simm memory

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state


    OCR Scan     		PDF MT8C8025 30-pin 1575mW

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)


    OCR Scan     		PDF MT8D168 30-pin 200mW 096-cycle A0-A10; A0-A11 MT8DI68

    256k 30-pin SIMM

    Abstract: 30-pin simm memory MT8259 30-pin SIMM
    Text: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP


    OCR Scan     		PDF MT8259 30-pin 120mW 1200mW 256k 30-pin SIMM 30-pin simm memory MT8259 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: |U|IC=RON MT9259 DRAM MODULE 256K X 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package SIP • Low profile, double-side mount (0.45 in) • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L


    OCR Scan     		PDF MT9259 30-pin 135mW 1350mW 100ns 120ns 150ns

    MCM91000

    Abstract: motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		PDF MCM9L1000 30-lead 30-pin CM511000A MCM511000A 9L1000 MCM91000AS70 MCM91000AS00 M91000AS MCM9L1000AS70 MCM91000 motorola mcm91000s

    MCM91000-70

    Abstract: MCM91000SG motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91000 MCM9L1000 The MCM91000 and MCM9L1000 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single­ in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP) consisting of


    OCR Scan     		PDF MCM91000 MCM9L1000 30-lead 30-pin MCM511000A 9L1000 MCM91000L70 MCM91000L80 MCM9L1000L70 MCM91000-70 MCM91000SG motorola mcm91000s

    mcm91000s

    Abstract: motorola 30-pin simm memory dynamic mcm511000 MCM91000L MCM91000-80 simm 30-pin 9-bit MCM91000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 Product Preview 1 M x 9 Bit Dynam ic Random Access M em ory M odule The MCM91000L and MCM91000S are 9M , dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead singlein-line memory modules (SIMM) or 30*pin single-in-line packages (SIP) consist­


    OCR Scan     		PDF MCM91000 MCM91000L MCM91000S 30-lead MCM511000 MCM91000S MCM91000L motorola 30-pin simm memory dynamic MCM91000-80 simm 30-pin 9-bit MCM91000

    MCM81000AS10

    Abstract: motorola 30-pin simm memory dynamic mcm81000s
    Text: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		PDF MCM81000 CM8L1000 30-lead 30-pin CM5110OOA MCM511000A 8L1000 MCM81000AS70 MCM81000AS80 MCM81000AS10 motorola 30-pin simm memory dynamic mcm81000s

    MCM91000SG

    Abstract: 91000S-80 91000S-70 91000LH70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A


    OCR Scan     		PDF MCM91000 30-lead 30-pin MCM511000A 91000LH70 91000LH80 91000S70 91000S80 MCM91000SG 91000S-80 91000S-70

    Untitled

    Abstract: No abstract text available
    Text: Jü l 1 8 J98S SM49256ALP 256KByte 256K x 9 CMOS DRAM Module {Low Profile) General Description Features The SM 49256ALP is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 9 bits, in a 30-pin, SIP(single-in-line pins) package.


    OCR Scan     		PDF SM49256ALP 256KByte 49256ALP 256Kbyte 30-pin, 60/70/80ns 60/70/80ns)

    Untitled

    Abstract: No abstract text available
    Text: ML IS »93 SM481000ALP 1MByte 1M x 8 CMOS Low Profile DRAM Module General Description Features The SM 481000ALP is a high performance, 1Mbyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP package. • • The module utilizes two CMOS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM481000ALP 481000ALP 30-pin, 60/70/80ns

    Untitled

    Abstract: No abstract text available
    Text: SMS481000SLP 1MByte 1M x 8 CMOS DRAM Module {Low Profile) General Description Features The SMS481000SLP is a high performance, 1-megabyte dynamic RAM memory module organized as 1M words by 8 bits, in a 30-pin, SIP(smgle-m-line pins) package. The module utilizes eight CMOS 1M x 1 dynamic RAMs


    OCR Scan     		PDF SMS481000SLP 30-pin, 70/80/100ns 100ns)

    Untitled

    Abstract: No abstract text available
    Text: »SV i f SM491000ALP 1MByte 1M x 9 CMOS Low Profile DRAM Module General Description Features The SM 491000ALP is a high performance, 1Mbyte dynamic RAM memory m odule organized as 1M words by 9 bits, in a 30-pin, SIP package. • • The module utilizes tw o CM OS 1M x 4 and one 1M x 1


    OCR Scan     		PDF SM491000ALP 491000ALP 30-pin, 60/70/80ns 777///////h1

    Untitled

    Abstract: No abstract text available
    Text: ML 1 6 »82 SM481000A 1MByte l M x 8 CMOS DRAM Module General Description Features The SM 481000A is a high performance, 1-megabyte dynam ic RAM module organized as 1M words by 8 bits, in a 30-pin SIP memory module package. • • • The module utilizes two CMOS 1M x 4 dynamic RAMs


    OCR Scan     		PDF SM481000A 81000A 30-pin 22fif 60/70/80ns 60/70/80ns) 81000A-06 81000A-07 81000A-08

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		PDF KMM491000 KMM591000 KM41C1000 20-pin R0286

    KM41C1000

    Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
    Text: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		PDF KMM491000/KMM591000 KMM491000 KMM591000 KM41C1000 20-pin 22/i/F R0286 30-pin simm memory 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12

    KM41C1000

    Abstract: KMM581000 30 pin SIP dram memory connector SAMSUNG 30 PIN samsung 30-pin KMM581000-12 connector SAMSUNG 12 PIN KMM581000-10 KM41C100
    Text: SAMSUNG SEMICONDUCTOR INC Tfl DE§ 7 ^ 4 1 4 2 0D05S27 0 HU - ¿ 3 KMM481OOO/KMM581OOO K M M481001/KMM581001 - 11 PRELIMINARY SPECIFICATION M E M O R Y MODULES 1Mx8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-blt Organization


    OCR Scan     		PDF 0D05S27 KMM481OOO/KMM581OOO M481001/KMM581001 KMM481000, KMM481001, KMM581000 KMM581001 KM41C1000/1 20-pin 22fiF KM41C1000 30 pin SIP dram memory connector SAMSUNG 30 PIN samsung 30-pin KMM581000-12 connector SAMSUNG 12 PIN KMM581000-10 KM41C100

    KM41C1000

    Abstract: KMM591000 connector SAMSUNG 30 PIN 30 pin SIP dram memory 30-pin simm memory KMM591001 simm 30-pin 9-bit
    Text: S AHSUNG SEMICONDUCTOR INC AU ñ H l . . PRELIMINARY SPECIFICATION KM M491000/KM M591000 KMM491001/KMM591001 MEMORY MODULES 1 M x 9 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • N inth device has separate D, Q and CAS or


    OCR Scan     		PDF M491000/KM M591000 KMM491001/KMM591001 KMM491000, KMM491001, KMM591000 KMMM591001 KM41C1000/1 20-pin 22/iF KM41C1000 connector SAMSUNG 30 PIN 30 pin SIP dram memory 30-pin simm memory KMM591001 simm 30-pin 9-bit

    Untitled

    Abstract: No abstract text available
    Text: 4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory MICROCIM T CORPORATION DESCRIPTION The Accutek AK594096 high density memory module is a CMOS dynamic RAM organized in 4 Meg x 9 bit words. The assembly consists of two 4 Meg x 4 DRAMS and one 4 Meg x 1 DRAM, in


    OCR Scan     		PDF AK594096 0107b47 000007S