Untitled
Abstract: No abstract text available
Text: May 1999 PBL 386 30/2 Subscriber Line Interface Circuit Description The PBL 386 30/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment. The PBL 386 30/2 has been optimized for low total line interface cost and a high
|
Original
|
PDF
|
2x900
2x30k.
1522-PBL
SE-164
|
IBEK 24 IPS 3-05
Abstract: IBEK 24 IPS 3-1515-T smd diode Coloured band marking code ticomel inductor IBEK 24 IPS 6-05 494LYF IBEK 24 IPS 10-05-T fuse smd code ud IBEK 48 ips 3-05 t ibek 5 ICR
Text: DC-DC Converters <40 W DC-DC Converters <40 W 6.1 1 Rugged Environment Output [W] 2 3 10 20 30 6.2 1 Output [W] 3 10 20 30 2 Product Family Case Page 1 Watt DIL 24 6-2 3 Watt DIL 24 6 - 10 IMX 7 IMX 6 - 17 10 Watt 2"x 2" 6 - 30 3 5 Output [V DC] 12 15 24 36 48
|
Original
|
PDF
|
|
diode hp 2900
Abstract: PBL 386 15/1 SHT 1N4448
Text: March 2000 PBL 386 30/2 Subscriber Line Interface Circuit Description Key Features The PBL 386 30/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.
|
Original
|
PDF
|
2x900
2x30k.
30/2SOS
30/2SOT
30/2QNS
30/2QNT
diode hp 2900
PBL 386 15/1 SHT
1N4448
|
wb7 ZENERdiode
Abstract: No abstract text available
Text: ISOFACE ISO1I813T Isolated 8 Channel Digital Input with IEC61131-2 Type 1/2/3 Characteristics Preliminary Data Sheet Revision 1.0, 2011-03-30 Industrial & Multimarket Edition 2011-03-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG
|
Original
|
PDF
|
ISO1I813T
IEC61131-2
ISO1I811T
TSSOP-48
wb7 ZENERdiode
|
ISO1I813T
Abstract: No abstract text available
Text: ISOFACE ISO1I813T Isolated 8 Channel Digital Input with IEC61131-2 Type 1/2/3 Characteristics Data Sheet V 2.0, 2013-04-30 Industrial & Multimarket Edition 2013-04-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG
|
Original
|
PDF
|
ISO1I813T
IEC61131-2
TSSOP-48
ISO1I813T
|
Untitled
Abstract: No abstract text available
Text: ISOFACE ISO1I813T Isolated 8 Channel Digital Input with IEC61131-2 Type 1/2/3 Characteristics Preliminary Data Sheet Revision 1.0, 2011-03-30 Industrial & Multimarket Edition 2011-03-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG
|
Original
|
PDF
|
ISO1I813T
IEC61131-2
ISO1I811T
TSSOP-48
|
RB050M-30
Abstract: RB050M Schottky Barrier Diodes "Schottky Barrier Diodes" Discrete Semiconductors Rohm Schottky Barrier Diodes 26X1 26X16 diodes list ROHM fast recovery diodes
Text: RB050M-30 | Schottky Barrier Diodes | Diodes | Discrete Semiconductors | ROHM CO., . Page 1 of 2 RB050M Site Search HOME, Products > Discrete Semiconductors > Diodes > Schottky Barrier Diodes > RB050M-30 ICs Discrete Semiconductors Schottky Barrier Diodes
|
Original
|
PDF
|
RB050M-30
RB050M
RB050M-30
barrier/rb050m-30/
RB050M-30TR
PMDU/SOD-123
RB050M
Schottky Barrier Diodes
"Schottky Barrier Diodes"
Discrete Semiconductors
Rohm Schottky Barrier Diodes
26X1
26X16
diodes list
ROHM fast recovery diodes
|
Untitled
Abstract: No abstract text available
Text: ZF Series Single and Dual Outputs 30 Watt DC/DC Converter 2:1 Wide Input Voltage Range FEATURES ● 30 Watts Output Power ● Output Current up to 6A ● High Efficiency up to 90% ● Fixed Switching Frequency ● Six-Sided Continuous Shield ● 2:1 Wide Input Voltage Range
|
Original
|
PDF
|
18VDC
36VDC
75VDC
|
Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-523 Package Weight mg 2 Product Group Type No. RB751S-40 1SS389 1SS388 BAT54X RB520S-30 RB521S-30 1SS387 1SS400 1SS422 BAS16X NSD914X BAS516 BZX584C2V0 – BZX584C51
|
Original
|
PDF
|
OD-523
RB751S-40
1SS389
1SS388
BAT54X
RB520S-30
RB521S-30
1SS387
1SS400
1SS422
|
SD210DE
Abstract: A 4042 B high speed Zener Diode SD5000 SD214DE SST210 SST214 SD214DE linear
Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5
|
Original
|
PDF
|
SD-SST210/214
SD210DE
SD214DE
SST210
SST214
1500C
1250C
SD210DE
A 4042 B
high speed Zener Diode
SD5000
SD214DE
SST210
SST214
SD214DE linear
|
N CHANNEL jfet Low Noise Audio Amplifier
Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5
|
Original
|
PDF
|
SD-SST210/214
SD210DE
SD214DE
SST210
SST214
N CHANNEL jfet Low Noise Audio Amplifier
diode ZENER A8
P-Channel Depletion Mosfets
N CHANNEL jfet ultra Low Noise Audio Amplifier
2N4351
bare die zener
ultra FAST DMOS FET Switches
sst210 sot-143
|
KA2 DIODE
Abstract: No abstract text available
Text: 200mW Surface Mount Zener Diode Data Sheet SOT-323 MBD4148W /BAS16W SWITCHING DIODE FEATURES 1. 01 REF 1. 25¡ À0. 05 Power dissipation 2. 30¡ À0. 05 mW Tamb=25℃ 1. 30¡ À0. 03 Collector current IO: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range
|
Original
|
PDF
|
200mW
OT-323
MBD4148W
/BAS16W
150mA
KA2 DIODE
|
Untitled
Abstract: No abstract text available
Text: ZF Series 30 Watt DC/DC Converter Industry Standard Package • OFFER SINGLE AND DUAL OUTPUT • 30 WATTS MAXIMUM OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • INTERNATIONAL SAFETY • SIX-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 90% • STANDARD 2” x 1.6” x 0.4” PACKAGE
|
Original
|
PDF
|
E155800
ZF48S5-6000
|
pine alpha st-100s arakawa chemical
Abstract: JIS7032 750H ST-100S smd non marking diode two terminal TOSHIBA DIODE GLASS MOLD
Text: Mounting and storage conditions Diodes Mounting and storage conditions !Recommended storage conditions 1. Temperature 5 to 40°C Recommended : 20 to 30°C 2. Humidity 30 to 80% RH (Recommended : 40 to 60% RH ) 3.Recommended period One year after manufacturing
|
Original
|
PDF
|
JIS7032
ST-100S
2529kHz,
pine alpha st-100s arakawa chemical
750H
ST-100S
smd non marking diode two terminal
TOSHIBA DIODE GLASS MOLD
|
|
|
EZJS1VB822
Abstract: EZJS2YC822 EZJS2YD472 EZJS1VC392 EZJS1VD182 EZJS2VB223 EZJS2YD
Text: Multilayer Varistors Multilayer Varistor for ESD pulse [DC voltage lines] Series : EZJS • Features ■ Handling Precautions ● Excellent ESD suppression due to advanced material technology ● Meets IEC61000-4-2, Special Level 30 kV standard ● Can replace 2 Zener Diodes and 1 Capacitor
|
Original
|
PDF
|
IEC61000-4-2,
EZJS1VB822
EZJS2YC822
EZJS2YD472
EZJS1VC392
EZJS1VD182
EZJS2VB223
EZJS2YD
|
Z2SMB33
Abstract: No abstract text available
Text: Z2SMB6.8 . Z2SMB200 2 W Z2SMB6.8 . Z2SMB200 (2 W) Surface Mount Silicon-Zener Diodes Si-Zener-Dioden für die Oberflächenmontage Version 2012-10-30 Maximum power dissipation Maximale Verlustleistung ± 0.5 2.2± 0.2 2.1± 0.1 5.4 0.15 Type Typ Nominal Z-voltage
|
Original
|
PDF
|
Z2SMB200
UL94V-0
DO-214AA
Z2SMB33
|
ZNR VARISTORS
Abstract: znr varistor y EC-68
Text: Multilayer Varistors Multilayer Varistor for ESD pulse [DC voltage lines] Series : EZJS • Features ■ Handling Precautions ● Excellent ESD suppression due to advanced material technology ● Meets IEC61000-4-2, Special Level 30 kV standard ● Can replace 2 Zener Diodes and 1 Capacitor
|
Original
|
PDF
|
IEC61000-4-2,
ZNR VARISTORS
znr varistor y
EC-68
|
358 SMD transistor
Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
Text: APPLICATION NOTE 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz PCS AN98023 Philips Semiconductors 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS
|
Original
|
PDF
|
BLV2045
AN98023
BLV2045,
OT390
SCA57
358 SMD transistor
smd capacitor philips
philips ceramic capacitors smd
smd resistor philips 1206
capacitor SMD PHILIPS
CERAMIC CAPACITOR SMD PHILIPS
transistor SMD DK
philips smd 1206 resistor
AN98026
SMD Transistor 6f
|
ZF12S15-2000
Abstract: ZF24S5-6000 MA1488
Text: ZF Series Rev. B Single and Dual Outputs 30 Watt DC/DC Converter 2:1 Wide Input Voltage Range FEATURES APPLICATIONS ● 30 Watts Output Power ● Wireless Network ● Output Current up to 6A ● Telecom/Datacom ● High Efficiency up to 90% ● Industry Control System
|
Original
|
PDF
|
18VDC
36VDC
ZF12S15-2000
ZF24S5-6000
MA1488
|
Untitled
Abstract: No abstract text available
Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max ( ) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5 2
|
Original
|
PDF
|
SD-SST211/213/215
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
25-year-old,
|
MA1051
Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Text: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC
|
OCR Scan
|
PDF
|
MA1000
MA4000
MA321
MA334
MA344
MA360
MA339
MA363
MA372
MA2S372
MA1051
MA1056
MA1000 Series
MA1240
MA1043
MA1062
MA1150
MA1360
MA3000 Series
MA1024
|
bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
|
OCR Scan
|
PDF
|
1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
|
SMD CODE
Abstract: No abstract text available
Text: RDHfTI • R L 2 5 0 0 0 Series P= 400m W Package : LL-34 Iz Vz (V) Part No. Iz CmA) Ranking B Max. •r (Q ) Iz im Al Iz (mA) Max. ( jk A ) Vr Max. (V) 2 .2 8 — 2 .5 2 20 30 20 1 2 00 0 .2 5 100 1.0 2 .3 8 — 2 .6 3 20 30 20 1 2 50 0 .2 5 100 1.0 2 .5 7 — 2 .84
|
OCR Scan
|
PDF
|
LL-34)
2T-23)
RLZ5000
TE-12
SMD CODE
|
MA840
Abstract: MA3330 MA1000 Series MA1000
Text: Diodes I Variable Capacitance Diodes Application Type No. U HF/ VHF T u n in g Vr V CATV T u n in g UHF/ T u n in g UHF/ VHF AFC F M -A M AFC VC O ro (PF) (PF) (O ) Package No. 30 2 1 3 6 6 -1 6 6 6 25 2.10 -2 .5 6 < 0.5 Mira (2 puis) MA334 30 3 1 0 3 3 —1290
|
OCR Scan
|
PDF
|
MA1000
MA4000
MA1000/4000
500/370mW
MA4091X
001E210
MA840
MA3330
MA1000 Series MA1000
|
