Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3,3 VOL 1A Search Results

    3,3 VOL 1A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TPS2113PW Texas Instruments Dual In/Single Out Autoswitching Power MUX, Auto Sw, Adj. Cur Limit, Adj. Vol Threshold, Sw Status 8-TSSOP -40 to 85 Visit Texas Instruments Buy

    3,3 VOL 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F 10 L 600

    Abstract: DIL 330 65764 z1015
    Text: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip


    Original
    PDF

    SMD-5962-38294

    Abstract: No abstract text available
    Text: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active


    Original
    PDF SMD5962 SMD-5962-38294

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: E Ericsson Internal PRODUCT SPECIFICATION Prepared also subject responsible if other EAB/FAC/P Johan Hörman Approved 1 (4) No. Checked BMR 463 series POL Regulators Input 4.5-14 V, Output up to 20 A / 66 W 1/1301-BMR 463Technical Uen Specification Date


    Original
    PDF 1/1301-BMR 463Technical

    Schmersal AZM 160

    Abstract: Schmersal IEC 947-5-1 16b2 zener diode THERMAL Fuse m20 tf 115 c IEC 60947-5-1 limit switch ex d Schmersal AZM 160 22 ISO ultrasonic sensor standards symbols zener diode catalogue relay tec 1401 EN 50041 IEC 60947-5-1 limit switch
    Text: L Protection – ATEX Explosion Protection Catalogue | Version 03 b_atep02v001.indd 1 08.12.2008 14:11:26 www.schmersal.com You will also find detailed information on our entire product progamme on our website: www.schmersal.com. Online documentation in six languages


    Original
    PDF atep02v001 D-42279 D-42232 D-35435 D-35429 Schmersal AZM 160 Schmersal IEC 947-5-1 16b2 zener diode THERMAL Fuse m20 tf 115 c IEC 60947-5-1 limit switch ex d Schmersal AZM 160 22 ISO ultrasonic sensor standards symbols zener diode catalogue relay tec 1401 EN 50041 IEC 60947-5-1 limit switch

    cyclohexene

    Abstract: 82306 1010218 urea formaldehyde resin adhesive tetrabutyl tin zinc naphthenate hydroquinone manufacturing process calcium chloride p-chlorophenol pentaerythritol
    Text: Matsushita Electric Group Chemical Substance Management Rank Guidelines Version 2 July 6, 2000 Matsushita Electric Industrial Co., Ltd. Contents 1. Purpose ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・1


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W


    Original
    PDF 1/1301-BMR 463Technical

    Untitled

    Abstract: No abstract text available
    Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W


    Original
    PDF 1/1301-BMR 463Technical

    BMR462

    Abstract: fuse 12a smd
    Text: E Ericsson Internal TABLE OF CONTENTS Prepared also subject responsible if other SEC/S Stella Song Approved 1 (1) No. Checked BMR462 series PoL Regulators Input 4.5-14 V, Output up to 12 A / 60 W 001 52-EN/LZT 146 434 Uen Specification Technical Date 2012-09-26


    Original
    PDF BMR462 52-EN/LZT fuse 12a smd

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary Specification Octal buffer/line driver with 5-volt tolerant 74LVC2244A inputs/outputs; clamping resistor; 3-state_ 74LVCH2244A FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; t, = t, < 2.5 ns • 5-Volt tolerant inputs/outputs,


    OCR Scan
    PDF 74LVC2244A 74LVCH2244A LVCH244A 74LVC 74LVCH2244A 74LVC2244A

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC157 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER S CAS292 - JANUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted CMOS Submicron Process Typical Vq lp (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical V q h v (Output V q h Undershoot)


    OCR Scan
    PDF SN74LVC157 SCAS292 SN74LVC157

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 16 Megabit CMOS SRAM DP3S512X32MXP PRELIMINARY DESCRIPTION: The DP3S512X32M XP is a 68-pin surface mount module consisting of four 5 1 2 K x 8 SRAM devices in plastic TSO P packages surface mounted on a FR-4 substrate. The module is available with "I"-Leads.


    OCR Scan
    PDF DP3S512X32MXP 68-pin DP3S512X32MXP

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C 7 4 LCXQ2 F / F N / F S Low-Voltage Quad 2-Input NOR Gate with 5V Tolerant Inputs and Outputs The TC74LCX02 is a high performance CMOS 2-INPUT NOB GATE. Designed for use in 3,3 Volt systems, it achieves high speed operation while maintaning the CMOS tow power dissi­


    OCR Scan
    PDF TC74LCX02 500mA

    LVCH16245

    Abstract: SN74ALVCH16245
    Text: SN74ALVCH16245 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS S C ES015-JULY 1995 DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Wldebus Family EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process ESD Protection Exceeds 2000 V Per


    OCR Scan
    PDF SN74ALVCH16245 16-BIT SCES015-JULY1995 MIL-STD-883C, JESD-17 300-mil 16-bit Zo-50Q, LVCH16245

    Untitled

    Abstract: No abstract text available
    Text: IIMII HM 65764 DATA SHEET_ KX 8 HIGH SPEED CMOS SRAM 8 FEATURES « FAST ACCESS TIME COMMERCIAL : 15/20/25/35/45/55 ns max INDUSTRIAL/MILITARY : 20/25/35/45/55 ns (max) • LOW POWER CONSUMPTION ACTIVE: 380 mWftyp) STANDBY : 110 mW (typ) . WIDE TEMPERATURE RANGE:


    OCR Scan
    PDF 8192x8 65764/Rev

    74151 pin configuration

    Abstract: 74151 TTL 74151 MSM10S0000 LS 74151
    Text: O K I Semiconductor M S M 1 0 S 0 0 0 0 _ 0.8|im Sea of Gates Family for High-Performance, 3 and 5 Volt Applications D E SC R IPTIO N The OKI MSM10S0000 Sea of Gates family is a high-performance, high-density semicustom product using OKI's scalable, 0.8|am drawn 0.6|_im effective , two layer metal, polysilicide, dual-well process


    OCR Scan
    PDF MSM10S0000 MSM10S0000 16-Meg MSM10S. 74151 pin configuration 74151 TTL 74151 LS 74151

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve


    OCR Scan
    PDF 256KX 16-bit HY51V4260B 400mil 40pin 40/44pin 1AC26-00-MAY94 4b75Gflfl

    74AC11258

    Abstract: No abstract text available
    Text: 54AC11258, 74AC11258 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/ MULTIPLEXERS WITH 3-STATE OUTPUTS TIO115— D 3257, JAN U AR Y 1989— REVISED M AR CH 1990 54AC11258 . . . J PACKAGE 74AC11258 . . . DW OR N PACKAGE 3-State Outputs Interface Directly with System Bus


    OCR Scan
    PDF 54AC11258, 74AC11258 TIO115-- 500-mA 300-mil 54AC11258 74AC11258

    Untitled

    Abstract: No abstract text available
    Text: D E N S E -P A C m i c r o s V s r ~m s /H -D & n s u s High Density Memory Device 512 Megabit CM OS 3.3V EDO DRAM 256 Megabit CM OS 3.3V EDO DRAM 128 Megabit CM OS 3.3V EDO DRAM PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The/fi-7 e«JM series is a family of interchangeable memory


    OCR Scan
    PDF 30A196-00

    Untitled

    Abstract: No abstract text available
    Text: March 1994 DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE


    OCR Scan
    PDF 8192x8 65764/Rev

    Untitled

    Abstract: No abstract text available
    Text: PERICOM PI74ALVCH16652 16-Bit Bus Transceiver and Register with 3-State Outputs Product Description Product Features • • • • • • •


    OCR Scan
    PDF 11111111111111111111111111111111111111M11 PI74ALVCH16652 16-Bit PI74ALVCH16373 48-pin PS8135A

    upd4104

    Abstract: 4104D HPD4104 IPD4104-1 PD4104
    Text: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC N M O S RAM D E SC R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve


    OCR Scan
    PDF uPD4104 uPD4104-1 uPD4104-2 PD4104 MPD4104 PD4104-2) LM27S2S //PD42S18160, 4104D HPD4104 IPD4104-1

    Untitled

    Abstract: No abstract text available
    Text: NEC MPD4104 MPD4104-1 MPD4104-2 NEC Electronics US.A. Inc. Microcomputer Division 4096 X 1 STATIC NMOS RAM D E S C R IP T IO N The ¿¿PD4104 is a high performance 4K static RAM . Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve


    OCR Scan
    PDF MPD4104 MPD4104-1 MPD4104-2 PD4104 MPD4104 PD4104-2) LM27S2S DCH157M //PD42S18160,

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


    OCR Scan
    PDF 32K-WORD 36-BIT uPD431636L 768-word 36-bit S100GF-65-8ET