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    Siemens FBB12X512

    FB 150A 12X5MMX1.2M SN PLATED CU
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    DigiKey FBB12X512 Box 3
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    Mouser Electronics FBB12X512
    • 1 $123.89
    • 10 $110.85
    • 100 $91.29
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    Walsin Technology Corporation MR12X512-JTL

    RES 5.1K OHM 5% 1206
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    DigiKey MR12X512-JTL Reel 5,000
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    Walsin Technology Corporation WR02X512-JAL

    RES 5.1K OHM 5% 1/20W 0201
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    DigiKey WR02X512-JAL Reel 15,000
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    Walsin Technology Corporation WR12X512-JTL

    RES 5.1K OHM 5% 1/4W 1206
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    DigiKey WR12X512-JTL Reel 5,000
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    3M 3M-5952-2--X-5--12

    TAPE DBL COATED/SIDED BLK 2"X5"
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    DigiKey 3M-5952-2--X-5--12 Bulk 2
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    2X512 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM29LV004T

    Abstract: EDI7F33512V
    Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.


    Original     		PDF EDI7F33512V 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29LV004T 512Kx8 EDI7F33512V

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M8-XXX 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organized as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply


    Original     		PDF 2x512Kx8 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: EDI7F33512V 512Kx32 FLASH DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.


    Original     		PDF EDI7F33512V 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29LV004T 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are


    Original     		PDF EDI7F33512C 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29F040 512Kx8

    AM290F040

    Abstract: No abstract text available
    Text: White Electronic Designs EDI7F33512C 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM290F040 Flash Device Fast Read Access Time - 80-150ns 5V Only Reprogramming Sector Erase Architecture Uniform sectors of 64 Kbytes each


    Original     		PDF 512Kx32 512Kx32, 2x512Kx32 4x512Kx32 AM290F040 80-150ns EDI7F433512C80BNC EDI7F433512C90BNC EDI7F433512C100BNC EDI7F433512C120BNC

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300


    Original     		PDF 2x512Kx8 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25


    Original     		PDF 2x512Kx8 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M8-XCX PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8 Commercial, Industrial and Military Temperature


    Original     		PDF 2x512Kx8 100ns 512Kx8 A0-18

    512k x 8 chip block diagram

    Abstract: AMD 705 AM29LV004T EDI7F33512V
    Text: White Electronic Designs EDI7F33512V 512Kx32 FLASH FEATURES 512Kx32, 2x512Kx32 and 4x512Kx32 Densities Based on AMDs - AM29LV004T Flash Device Fast Read Access Time - 80ns 3V Only Reprogramming Flexible, Sector Architecture One 16Kbyte, two 8Kbyte, one 32Kbyte and


    Original     		PDF EDI7F33512V 512Kx32 512Kx32, 2x512Kx32 4x512Kx32 AM29LV004T 16Kbyte, 32Kbyte 64Kbyte EDI7F33512, 512k x 8 chip block diagram AMD 705 EDI7F33512V

    Untitled

    Abstract: No abstract text available
    Text: FTS1MX8-XXX 1MX8 organised 2x512Kx8 SRAM FEATURES „ Access Times 17, 20, 25, 35, 45, 55ns „ Organised as two banks of 512Kx8 „ Revolutionary, Center Power/Ground Pinout „ Commercial, Industrial and Military Temperature Ranges „ Packaging: „ 5 Volt Power Supply


    Original     		PDF 2x512Kx8 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: WS1M8-XCX White Electronic Designs PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES „ Access Times 70, 85, 100ns „ Evolutionary, Corner Power/Ground Pinout „ Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 „ Organized as two banks of 512Kx8 „


    Original     		PDF 2x512Kx8 100ns 512Kx8 A0-18

    Untitled

    Abstract: No abstract text available
    Text: MI TSUBI SHI M E M O R Y C A R D D YN A MI C RAM CARDS MF12M1-L57ATXX 1x512/fx32i&/i D R A M Card MF14M1-L57ATXX 2x512/^x326/7 D R A M Card Connector Type T w o - p ie c e 8 8 -p i n y I Extend DESCRIPTION These DRAM CARDs JEIDA DRAM are developed ba s e d


    OCR Scan     		PDF 1x512/fx32i 2x512/ x326/7 MF12M1-L57ATXX MF14M1-L57ATXX iNote23)

    AM29LV004T

    Abstract: EDI7F33512V eco 9230
    Text: EDI7F33512V SEDI, 512Kx32 Flash ELECTRONIC DESIGNS, IN C I 512Kx32 Flash Block Diagrams The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29LV004T - 512Kx8 Flash Device in


    OCR Scan     		PDF EDI7F33512V 512Kx32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29LV004T EDI7F33512V eco 9230

    WA126

    Abstract: GA-311
    Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory


    OCR Scan     		PDF EDI9F81025C 2x512Kx8 100ns EDI9F81025LP) EDI9F81025C 512Kx8 WA126 GA-311

    mz70

    Abstract: No abstract text available
    Text: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory


    OCR Scan     		PDF EDI9F81025C 2x512Kx8 EDI9F81025C 100ns EDI9F81025LP) 512Kx8 mz70

    Untitled

    Abstract: No abstract text available
    Text: WDÍ EDI9F81025C ELECTRONIC DESIGNS INC. • Surface Mount Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS Module , Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.


    OCR Scan     		PDF EDI9F81025C 2x512Kx8 EDI9F81025C 512Kx8 100ns. EDI9F81025LP, EDI9F81025LP70BPC

    Untitled

    Abstract: No abstract text available
    Text: WS1M8-XXX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES • A c c e s s T i m e s 17, 20, 25, 35, 45, 5 5 n s ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t ■ P a c k a g in g : ■ C o m m e r c i a l , In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a ng e s


    OCR Scan     		PDF 2x512Kx8

    Untitled

    Abstract: No abstract text available
    Text: WHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH SIM M WPF1M32A-90PSC5 PRELIMINARY* FEATURES • A ccess Tim e o f 90ns ■ ■ Packaging: ■ Organized as tw o banks o f 512Kx32 • 80-pin S IM M ■ C om m ercial T e m pe ratu re Range • The m odule is m a nufa cture d w ith e ig h t 512Kx8 CMOS


    OCR Scan     		PDF 2x512Kx32 WPF1M32A-90PSC5 512Kx32 80-pin 512Kx8 DDG1S40 1M32A

    Untitled

    Abstract: No abstract text available
    Text: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • 32 DIP TOP VIEW A 18E 1 ^ 31 □ A15 A12C 4 A 7C 5 29 □ WE E E A4 E A3 E A2 E A1 E AO E 28 □ A13 A6 6 27 □ A8 7 26 □ A9 GND


    OCR Scan     		PDF 2x512Kx8

    332 Ic 8 pin

    Abstract: 4X512K ic 331
    Text: ^EDI E D I7F33S 12C 512Kx32 Flash EL£CTRONC CESGN& M C I Features 512Kx32 Flash Module 2,4,8 megabyte CMOS Flash Module Family Organization: 512Kx32 2x512Kx32 4x512Kx32 Fast Read Access Time-80ns Five Volt Only Reprogramming Internal Program Control and Timer


    OCR Scan     		PDF 512Kx32 2x512Kx32 4x512Kx32 Time-80ns I7F33S 2x512Kx32 4x512Kx32 EDI7F33512CRev 332 Ic 8 pin 4X512K ic 331

    EDI9F81025C100BPC

    Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
    Text: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		PDF EDI9F81025C 2x512Kx8 EDI9F81025C 512Kx8 100ns. EDI9F81025LP, EDI9F81025C100BPC EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC

    367 al

    Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
    Text: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams


    OCR Scan     		PDF EDI7F33512C 512KX32 EDI7F33512, EDI7F233512 EDI7F433512 2x512Kx32 4x512Kx32 AM29F040 367 al CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 EDI7F33512C

    PD2743

    Abstract: WPF1M32A-90PSC5 80pin-SIMM AO523
    Text: I/VHITE M IC R O E L E C T R O N IC S 2x512Kx32 5V FLASH S IM M WPF1M32A-90PSC5 P R E L IM IN A R Y * FEATURES • Access Time of 90ns ■ 100,000 Erase/Program Cycles ■ Packaging: ■ Organized as two banks of 512Kx32 • 80-pin S IM M ■ Commercial Temperature Range


    OCR Scan     		PDF WPF1M32A-90PSC5 2x512Kx32 80-pin 512Kx8 64KBytes Am29F040-90 512Kx32 foPF1M32A-90PSC5 80-PINSIMM PD2743 WPF1M32A-90PSC5 80pin-SIMM AO523

    Q180

    Abstract: No abstract text available
    Text: MITSUBISHI MEMORY CARD D YN A M IC RAM CARDS M F14M 1-J57A TXX 2x512Kx32bit D R A M Card Connector Type T w o -p iece 88-pin DESCRIPTION These D R A M C A R D s have been developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. T hese c a rd s a re m a d e u s in g in d u s t r y s t a n d a r d 512K


    OCR Scan     		PDF 2x512Kx32bit 1-J57A 88-pin 88pin Q180