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Text: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B
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SD1462
400MHz
S006LF
VUU-30V
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Untitled
Abstract: No abstract text available
Text: Drawing XMK Seríes MECHANICAL SPECIFICATIONS M T IN G FORCEr 5-251Í RE1ENTIÜN STRENGTH: ^ 7 6 N D U R A B ILIT Y & 7G 0 T l t f S ELECTRICAL CURRENT KATIH G 5 L SAW S VOt-TM*; RATING: ]2SV AC INSU LATION RtSlSTAfiCKi ^ lD O O H Ü 1171 [STANDING VOLTAGE: AC L000V RMS BOta o r 60htz IMin
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5-25X
TKCHr30
CC41LKI1
XMK-5611-88-11-301-L
017WX
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Abstract: No abstract text available
Text: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W 100 W right
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L OPTIONS: N INDICATOR FAILSAFE TRANSFER Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)
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E13000
Abstract: No abstract text available
Text: B 3 RADI A L L 6GHz TECHNICAL DATA SHEET QMA FAILSAFE R577E13000 TRANSFER Page 1/ 2 SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 6 GHz : 50 Ohms 0 - 3 3 - 6 1.20 1.30 0.20 dB 0.30 dB >= 80 dB 70 dB AVER. POWER # 120 W 80 W FREQUENCY (GHz)
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R577E13000
E13000
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R570
Abstract: No abstract text available
Text: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC LATCHING R570 633000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #
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solder000
R570
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L LATCHING Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W 100 W right
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W 200 W right
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R570113005
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 700 W 500 W 400 W 250 W
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R570113035
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L FAILSAFE Page 1/ 2 S.P.D.T. SWITCH OPTIONS: /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER # 350 W 250 W 150 W 120 W
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC FAILSAFE R570 613000 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #
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uv phototransistor
Abstract: No abstract text available
Text: 6 79 8 5 8 0 OP T E K TECHNOLOGY OPTeFtECHNOLOSY 86 D 00038 INC INC ~ ab DE £/ 7 %. D IbT^ÖSfiO ' □□0DQ3S Sy ! s PH O T O T RA N SISTO R A N O PH O TO D ARLIN G TO N CHIPS ILtCTNICAl CHARACflftltTICt MC*CI leio BVew MIN IC=IOO < MAX VCE=I0V 8 PART NUMBER
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KK020X
KK02IX
KK022X
8K132
KK023X
KK024x1
KK025X
KKOI50
uv phototransistor
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L OPTIONS: N INDICATOR FAILSAFE TRANSFER Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W
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Untitled
Abstract: No abstract text available
Text: '• r n RAD I ALL OPTIONS: INDICATOR N FAILSAFE TRANSFER Page SWITCH 112 I TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L N FAILSAFE TRANSFER Page 1/ 2 SWITCH OPTIONS:/ TTL DRIVE R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 - 3 GHz : 50 Ohms 1 - 2 2 - 3 1.15 1.20 1.25 0.15 dB 0.20 dB 0.25 dB >= 85 dB 80 dB 75 dB AVER. POWER # 700 W 500 W 400 W FREQUENCY (GHz)
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Untitled
Abstract: No abstract text available
Text: B 3 RADI A L L 12.4GHz TECHNICAL DATA SHEET TNC LATCHING R570 633005 Page 1/ 2 S.P.D.T. SWITCH OPTIONS: R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE 1.15 1.20 1.25 1.35 1.50 0.15 dB 0.20 dB 0.25 dB 0.35 dB 0.50 dB >= 85 dB 80 dB 75 dB 70 dB 60 dB AVER. POWER #
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R570633005
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NE540
Abstract: SE540 NE540 equivalent 500 watts amplifier schematic diagram 236BG 5612
Text: PIN CONFIGURATION FEATURES . • • • • INTERNAL CURRENT LIMITING LOW STANDBY CURRENT HIGH OUTPUT CURRENT CAPABILITY WIDE POWER BANDWIDTH LOW DISTORTION ABSOLUTE MAXIMUM RATINGS Supply Voltage Operating Temperature Range Storage Temperature Range Output Short Circuit Duration
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SE540
NE540
SE540
5000pF
NE540 equivalent
500 watts amplifier schematic diagram
236BG
5612
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2SD210
Abstract: No abstract text available
Text: HITACHI 2SD210 7 -Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 5
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2SD210
O-220FM
2SD2107
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Untitled
Abstract: No abstract text available
Text: FU JI tìU.eieu'UtìUK 2SK2643-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Q 15A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2643-01
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S0146
Abstract: No abstract text available
Text: Hm -ft.ix -m m "140Commerce Drive m iC fO S B tU l Montgomeryviile, PA 18936-1013 I^ Œ h SÊ b s Î * Tel: 215 631-9840 - S D 1 4 6 8 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 23V POWER OUT 70W POWER GAIN
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140Commerce
400MHz
SD1460
S01468
SD1468
200-500MHi
408MHSÎ
SD1468
600SLFL
S0146
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