2SK3582 Search Results

2SK3582 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK358/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK3582MFV	Toshiba	2SK3582MFV - Junction FETs(Single)	Original	PDF
2SK3582TK	Toshiba	Field Effect Transistor Silicon N Channel Junction Type For ECM	Original	PDF
2SK3582TV	Toshiba	Silicon N Channel Junction Type For ECM	Original	PDF

2SK3582 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	2SK3582TV 2SK3582TV	PDF
2SK3582TK Abstract: 2SK3582 Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C	Original	2SK3582TK 2SK3582TK 2SK3582	PDF
2SK3582TV Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)	Original	2SK3582TV 2SK3582TV	PDF
2SK3582TK Abstract: ecm circuit Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3582TK For ECM 0.22±0.05 Rating Unit VGDS -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range	Original	2SK3582TK 2SK3582TK ecm circuit	PDF
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 • VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV	PDF
2SK3582TK Abstract: maximum idss transistor 290A transistor transistor marking CG Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range	Original	2SK3582TK 2SK3582TK maximum idss transistor 290A transistor transistor marking CG	PDF
2SK3582CT Abstract: 2SK3582 Text: 2SK3582CT 東芝ジャンクション FET シリコンNチャネル接合形 2SK3582CT エレクトレットコンデンサマイクロフォン用・1.0x0.6×0.38 mmt の CSP パッケージのため小型マイクロフォンに最適・減電圧特性に優れる	Original	2SK3582CT 100Hz, 100mV 2SK3582CT 2SK3582	PDF
2SK3582MFV Abstract: 2SK3582 Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV 2SK3582MFV 2SK3582	PDF
2SK3582TK Abstract: No abstract text available Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature	Original	2SK3582TK 2SK3582TK	PDF
Untitled Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV	PDF
2SK3582 Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj	Original	2SK3582TV 2SK3582	PDF
2SK3582MFV Abstract: No abstract text available Text: 2SK3582MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582MFV For ECM Unit: mm Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C	Original	2SK3582MFV 100mV 2SK3582MFV	PDF
Untitled Abstract: No abstract text available Text: 2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit: mm VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range 0.4 0.4 2 0.3±0.05 3 Unit Gate Current	Original	2SK3582TV	PDF
CG transistor Abstract: No abstract text available Text: 2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature	Original	2SK3582TK 100mV CG transistor	PDF

lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2SK3376TT Abstract: H5401 TC58010FT TMPR4925XB fet 1412 BGA256 TPS850 TX49 JFET ecm FET H2 Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年1月号 1 多値技術を採用し大容量化を実現 1ギガビットNAND型フラッシュメモリ TC58010FTTH58020FT NANDシステム・カード担当 045-890-2702 NAND型フラッシュメモリは、大容量・安価という	Original	TC58010FT TH58020FT NAND22 7-3405FAX. 48TSOP TC55YD1873YB TC55YD1837YB SRAM045-890-2701 2SK3376TT H5401 TC58010FT TMPR4925XB fet 1412 BGA256 TPS850 TX49 JFET ecm FET H2	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
RJN1167 Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E Text: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )	Original	O-92M KTK698TV KTK697TV KTK599TV KTK598TV KTK597 KTK596 2SK1578 KTK596S RJN1167 KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Text: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA8030 lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF

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2SK3582 Search Results

2SK3582 Datasheets (4)

2SK3582 Datasheets Context Search

2SK3582TV

2SK3582TK

2SK3582TV

2SK3582TK

Untitled

2SK3582TK

2SK3582CT

2SK3582MFV

2SK3582TK

Untitled

2SK3582

2SK3582MFV

Untitled

CG transistor

lm2804

GT30F131

IGBT GT30F124

2SK3376TT

TOSHIBA MG150N2YS40

GT30F124

transistor bc 245

RJN1167

TPCA*8030

GT45F122