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    Toshiba America Electronic Components 2SK2961TPE6

    Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod T/R - Tape and Reel (Alt: 2SK2961TPE6)
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    2SK2961 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2961 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2961 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2961 Toshiba N-Channel MOSFET Original PDF
    2SK2961 Toshiba Original PDF
    2SK2961 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2961 Toshiba Silicon N channel MOS type field effect transistor for high speed switching, relay drive, DC-DC converter and motor drive applications Scan PDF
    2SK2961 Toshiba FET - Silicon N-Channel MOS Type Scan PDF
    2SK2961(F,M) Toshiba 2SK2961 - MOSFET N-CH 60V 2A TO-92 Original PDF
    2SK2961(TE6,M) Toshiba 2SK2961 - Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod T/R Original PDF
    2SK2961TPE6 Toshiba 2SK2961TPE6 - Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod T/R Original PDF

    2SK2961 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2961

    Abstract: transistor k2961 2sK2961 equivalent 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 2sK2961 equivalent 2SK2961

    K2961

    Abstract: transistor k2961 k2961 Transistor
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor

    K2961

    Abstract: 2SK2961 DSA0017237 G1150
    Text: 2SK2961 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2961 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.2Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK2961 10VID O-92MOD K2961 2002/95/EC) K2961 2SK2961 DSA0017237 G1150

    2sK2961 equivalent

    Abstract: 2sk2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 2sK2961 equivalent 2sk2961

    k2961

    Abstract: transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 k2961 transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961

    K2961

    Abstract: transistor k2961 k2961 Transistor 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor 2SK2961

    K2961

    Abstract: 2SK2961
    Text: 2SK2961 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2961 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.2Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK2961 10VID O-92MOD K2961 2002/95/EC) K2961 2SK2961

    2SK2961

    Abstract: S 170 TRANSISTOR
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application l Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 2SK2961 S 170 TRANSISTOR

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    K2961

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 75MAX. 100/i K2961

    transistor 1127

    Abstract: transistor 2sk2961
    Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)


    OCR Scan     		PDF 2SK2961 100//A 75MAX. 20kil) 100/is^ transistor 1127 transistor 2sk2961

    K2961

    Abstract: 2SK2961
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 K2961 2SK2961

    2SK2961

    Abstract: transistor 1127
    Text: T O SH IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : R nS (ON) —0.2H (Typ.)


    OCR Scan     		PDF 2SK2961 100//A 20kfi) 2SK2961 transistor 1127

    K2961

    Abstract: 2SK2961
    Text: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 100//S* K2961

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE L2- tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS R ELA Y DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION Low Drain-Source ON Resistance : Rd S (ON) = 0 .2 0 (Typ.)


    OCR Scan     		PDF 2SK2961 150-SOURCE

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M05 TYPE L2- tt-M O$V ? <; \c i q 1 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. Low Drain-Source ON Resistance : Rüg (ON) —0.20 (Typ.)


    OCR Scan     		PDF 2SK2961 100/zA 120COMlî

    k2961

    Abstract: 2SK2961
    Text: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER 5.1 MAX. APPLICATION Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2961 k2961 2SK2961