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    2SK2611 TRANSISTOR Search Results

    2SK2611 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SK2611 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2611

    Abstract: transistor 2sk2611 toshiba 2sk2611 SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 2SK2611 transistor 2sk2611 toshiba 2sk2611 SC-65 PDF

    K2611

    Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611 PDF

    2SK2611

    Abstract: transistor 2sk2611 2sk2611 transistor SC-65
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 15transportation 2SK2611 transistor 2sk2611 2sk2611 transistor SC-65 PDF

    K2611

    Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
    Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor PDF

    CEM-1 20Z

    Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al
    Text: V T- 11 5 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 8 8 ~ 1 3 2 VA C , 11 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST


    Original     		80mVp-p 230VAC CTc31 KBJ406G 4AL/250V TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    k2611

    Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65
    Text: 2SK2611 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. Low Drain-Source ON Resistance : Rd S (O N )-1-1^ (Typ.)


    OCR Scan     		2SK2611 k2611 toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65 PDF

    2Sk2611

    Abstract: transistor 2sk2611 TE5500 2sk2611 transistor
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2611 SILICON N CHANNEL MOS TYPE tt- M O S I I I DATA (2SK2611) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		2SK2611 2SK2611) 20kil) 2SK2611 transistor 2sk2611 TE5500 2sk2611 transistor PDF

    2sk2611 transistor

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SIII 2SK2611 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE APPLICATIONS 15.9MAX.


    OCR Scan     		2SK2611 20kil) 2sk2611 transistor PDF

    2SK2611

    Abstract: diode co35
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2SK2611 DATA SILICON N CHANNEL MOS TYPE tt- MOS I I I (2SK2611) HIGH SPEED, HIGH VO LTA G E SW ITCHIN G APPLIC A TIO N S I N D U S T R IA L A P P L IC A T I O N S U n it in mm DC-DC CONVERTER, R ELA Y DRIVE A N D M O TO R DRIVE A PPLICATIO N S


    OCR Scan     		2SK2611 2SK2611) 100/zA 2SK2611 diode co35 PDF