Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2596BX Search Results

    SF Impression Pixel

    2SK2596BX Price and Stock

    Rochester Electronics LLC 2SK2596BXTL-E

    MOSFET N-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2596BXTL-E Bulk 158
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9
    • 10000 $1.9
    		Buy Now

    Renesas Electronics Corporation 2SK2596BXTL-E

    2SK2596BXTL-E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK2596BXTL-E 6,900 175
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.95
    • 10000 $1.95
    		Buy Now
    Rochester Electronics 2SK2596BXTL-E 6,900 1
    • 1 $1.83
    • 10 $1.83
    • 100 $1.72
    • 1000 $1.56
    • 10000 $1.56
    		Buy Now

    2SK2596BX Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2596BX Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK2596BXTL-E Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF

    2SK2596BX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2596

    Abstract: 2SK2596BXTL-E
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596 2SK2596BXTL-E

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0200Z Previous ADE-208-1367(Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK2596 REJ03G0207-0200Z ADE-208-1367

    2SK2596BXTL-E

    Abstract: 2SK2596
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2596

    Abstract: 2SK2596BX REJ03G0207-0300 ADE-208-1367
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 Previous ADE-208-1367(Z Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK2596 REJ03G0207-0300 ADE-208-1367 PLZZ0004CA-A Unit2607 2SK2596 2SK2596BX REJ03G0207-0300

    2SK2596BXTL-E

    Abstract: No abstract text available
    Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596BXTL-E