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Rochester Electronics LLC 2SK2595AXTB-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2595AXTB-E	Bulk			33	1 - 10 - 100 $9.1 1000 $9.1 10000 $9.1	Buy Now
Renesas Electronics Corporation 2SK2595AXTB-E Trans RF MOSFET N-CH 17V 1.1A 3-Pin RP8P T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2595AXTB-E		13,000		35	1 - 10 - 100 $10.2875 1000 $9.3 10000 $9.3	Buy Now
Rochester Electronics	2SK2595AXTB-E		13,000		1	1 $8.75 10 $8.75 100 $8.23 1000 $7.44 10000 $7.44	Buy Now

2SK2595 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2595		Hitachi Semiconductor	Silicon NPN Triple Diffused		Original	PDF
2SK2595		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2595		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2595AX		Renesas Technology	FET Transistor, Silicon N-Channel MOS FET UHF Power Amplifier, Tape and Reel		Original	PDF

2SK2595 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Hitachi DSA0076 Abstract: 2SK2595 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1366 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable of surface mounting	Original	PDF	2SK2595 ADE-208-1366 Hitachi DSA0076 2SK2595
2sk2595 Abstract: 3845 FET Hitachi DSA00307 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.	Original	PDF	2SK2595 2sk2595 3845 FET Hitachi DSA00307
Untitled Abstract: No abstract text available Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0200Z Previous ADE-208-1366 (Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 37.3 dBm, ηD = 50%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0200Z ADE-208-1366
2SK2595 Abstract: 2SK2595AX marking 0836 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0300 2SK2595 2SK2595AX marking 0836
2SK2595AXTB-E Abstract: 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0401 PLSS0003ZA-A 2SK2595AXTB-E 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107
Hitachi DSA002780 Abstract: 2SK2595 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.	Original	PDF	2SK2595 Hitachi DSA002780 2SK2595
2SK2595AX Abstract: u 172 2SK2595 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0400 Rev.4.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0400 PLSS0003ZA-A Chann-900 Unit2607 2SK2595AX u 172 2SK2595
2sk 4207 Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent Text: CONTENTS Index . 5 General Information . 9	Original	PDF	D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
2SK2595 Abstract: 2SK2595AXTB-E RP8P *0821 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
7054F Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver	Original	PDF	2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
hitachi j50 Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent Text: CONTENTS Index . 5 General Information . 9	Original	PDF	D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

2sk408 Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595 Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB	OCR Scan	PDF	HA21008 HA22012 HA22022 HA22016 MSP-18 HA21001MS 16dBtyp 1SD1133 2SD1134 2SD1135 2sk408 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
2SK series Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series Text: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153	OCR Scan	PDF	2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series