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    Part ECAD Model Manufacturer Description Download Buy
    2SK2568-E Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation

    2SK256 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2560 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2560 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK2561-01 Unknown Scan PDF
    2SK2561-01R Fuji Electric N-channel MOS-FET Original PDF
    2SK2561-01R High Voltage Power Systems N-channel MOS-FET Original PDF
    2SK2562-01R Fuji Electric N-channel MOS-FET Original PDF
    2SK2562-01R High Voltage Power Systems N-channel MOS-FET Original PDF
    2SK2562-01R Fuji Electric N-channel MOS-FET Scan PDF
    2SK2563 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2563 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK2564 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2564 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK2568 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2568 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2568 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2568 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2568-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2569 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2569 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2569 Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2561-01R

    Abstract: No abstract text available
    Text: 2SK2561-01R N-channel MOS-FET FAP-II Series 600V > Features - 1,2Ω 9A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2561-01R 2SK2561-01R

    2SK2568

    Abstract: No abstract text available
    Text: 2SK2568 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current Suitable for switching regulator and DC–DC converter S 2 1 G 1 2 3 3 1. Gate 2. Source Flange


    Original     		PDF 2SK2568 2SK2568

    2SK2569

    Abstract: Hitachi DSA001651
    Text: 2SK2569 Silicon N-Channel MOS FET November 1996 Application Low frequency power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source


    Original     		PDF 2SK2569 100mA) 2SK2569 Hitachi DSA001651

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2569 Silicon N-Channel MOS FET ADE-208-384 Z 1st. Edition Aug. 1995 Application Low frequency power switching Features • • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline


    Original     		PDF 2SK2569 ADE-208-384 100mA) D-85622 Hitachi DSA00276

    2sk2564

    Abstract: F8F60VX2 29mJ
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2564 F8F60VX2) FTO-220 00-200V 290mJ 2sk2564 F8F60VX2 29mJ

    HITACHI DIODE

    Abstract: 2SK2568 Hitachi DSA00382
    Text: 2SK2568 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain


    Original     		PDF 2SK2568 HITACHI DIODE 2SK2568 Hitachi DSA00382

    2SK2569

    Abstract: Hitachi DSA00395
    Text: 2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power switching Features • • • • Low on-resistance. R DS on = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1


    Original     		PDF 2SK2569 ADE-208-384 100mA) 2SK2569 Hitachi DSA00395

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2568 Silicon N-Channel MOS FET ADE-208-1363A Z 2nd. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SK2568 ADE-208-1363A D-85622 Hitachi DSA00276

    F8F60VX2

    Abstract: 2sk2564
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2564 F8F60VX2) FTO-220 00-200V 290mJ F8F60VX2 2sk2564

    2SK2563

    Abstract: F4F60VX2 600V,4A DIODE
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 2SK2563 F4F60VX2 600V,4A DIODE

    2SK2569

    Abstract: 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A
    Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline


    Original     		PDF 2SK2569 REJ03G1018-0300 PLSP0003ZB-A 2SK2569 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A

    2SK2569

    Abstract: 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A
    Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0200 Previous: ADE-208-384 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).


    Original     		PDF 2SK2569 REJ03G1018-0200 ADE-208-384) PLSP0003ZB-A 2SK2569 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2560 F20F20VZ FTO-220 2-24V

    2SK2562-01R

    Abstract: 2sk2562
    Text: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2562-01R 2SK2562-01R 2sk2562

    600V,4A DIODE

    Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2563 F4F60VX2) FTO-220 600V4A 00-200V 110mJ 600V,4A DIODE 2SK2563 600V4A F4F60VX2 2a 400v mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline


    Original     		PDF 2SK2569 REJ03G1018-0300 PLSP0003ZB-A

    2SK2568

    Abstract: 2SK2568-E PRSS0004ZE-A SC-65
    Text: 2SK2568 Silicon N Channel MOS FET REJ03G1017-0300 Previous: ADE-208-1363 Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK2568 REJ03G1017-0300 ADE-208-1363) PRSS0004ZE-A 2SK2568 2SK2568-E PRSS0004ZE-A SC-65

    CONTINENTAL DC-DC CONVERTER

    Abstract: Hitachi DSA001651
    Text: 2SK2568 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2


    Original     		PDF 2SK2568 D-85622 CONTINENTAL DC-DC CONVERTER Hitachi DSA001651

    Untitled

    Abstract: No abstract text available
    Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange


    OCR Scan     		PDF 2SK2568

    Untitled

    Abstract: No abstract text available
    Text: 2SK2569 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power switching Features • Low on-resistance. • R • 2.5V gate drive device. • Small package MPAK . ds („„, = Outline 2-6 & max. (at VGS = 4 V, ID= 100mA) 2SK2569


    OCR Scan     		PDF 2SK2569 100mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • Suitable for sw itching regulator and D C-DC converter Outline TO-3P G o 1 UJ


    OCR Scan     		PDF 2SK2568

    Untitled

    Abstract: No abstract text available
    Text: F U JI 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2 ,2 Q 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK2562-01R 20Kil) 150Characteristics

    VO5-10V

    Abstract: No abstract text available
    Text: F U JI e t s i o r i M 2SK2561-01R i e N-channel MOS-FET FAP-II Series 600V > Features 1,2a 9A > Outline Drawing TO-3PF - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2561-01R VO5-10V

    Untitled

    Abstract: No abstract text available
    Text: 2SK2569 Silicon N-Channel MOS FET HITACHI Application Low frequency power switching Features • • • • Low on-resistance. RDS „nl = 2.6 Q. max. (at VGS = 4 V, ID = 100mA 2.5V gate drive device. Small package (M PAK). Outline MPAK '• 1 2 1. Source


    OCR Scan     		PDF 2SK2569 ADE-208-384 100mA)