Untitled
Abstract: No abstract text available
Text: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 0.85±0.1 Symbol Rating Unit Drain-Source breakdown voltage VDSS 250 V Gate-Source voltage
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2SK2474
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Untitled
Abstract: No abstract text available
Text: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 0.8max. 0.85±0.1 Gate-Source voltage Drain current Max drain current Allowable power dissipation
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2SK2474
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2SK2474
Abstract: 2SK24
Text: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on M Di ain sc te on na tin nc ue e/ d 0.85±0.1 Rating Unit VDSS 250 V Gate-Source voltage
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2SK2474
2SK2474
2SK24
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK2474
Abstract: No abstract text available
Text: Panasonic P ow er F-M O S FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 5.3+0.1 • Features • Low ON-resistance RDS on • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings Param eter Drain-Source breakdown voltage
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2SK2474
SC-63
100il
2SK2474
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2SK2474
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2474 Silicon N-Channel MOS For high-speed switching Unit : mm • Features • Low ON-resistance R d s oii • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings (Tc = 25°C) Parameter
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2SK2474
SC-63
2SK2474
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8893 single chip tv processor
Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Text: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7
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MN171608/9
LN66A
MN12510
AN3813/14/15
AN3840N
PNA4601M
MN187*
MN6750*
AN3126/29
AN5179/82N
8893 single chip tv processor
transistor tt 2170 em
AN7156N
an8294nsb
Color TV circuit 8893
AN8782SB
mn150832
mip160
mn662741
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2SK2276
Abstract: 2sk227
Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40
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2SK601
2SK614
2SK615
2SK620
2SK2276
2SK2277
2SK2342
2SK2474
2SK2495
A2SK2660
2SK2276
2sk227
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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