2SK2013
Abstract: Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)
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2SK2013
2SJ313
SC-67
2-10R1B
2SK2013
Audio Power Amplifier TOSHIBA
Toshiba Audio power amplifier
toshiba 2sj313
2SJ313
Toshiba 2SJ
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2sk2013 2SJ313
Abstract: 2SJ313 2SK2013 K2013 toshiba pb includes
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)
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2SK2013
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2sk2013 2SJ313
2SJ313
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toshiba pb includes
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k2013
Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)
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2SK2013
2SJ313
SC-67
2-10R1B
K2013
k2013
toshiba audio power amplifier
2-10r1b
Audio Power Amplifier TOSHIBA
toshiba marking code transistor
2SJ313
2SK2013
Toshiba 2SJ
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2sk2013 2SJ313
Abstract: No abstract text available
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)
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2SK2013
2SJ313
SC-67
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2sk2013 2SJ313
Abstract: Toshiba 2SJ
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)
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2SK2013
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2SK2013
Abstract: K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)
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2SK2013
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2SJ313
Abstract: 2SK2013 2sk2013 2SJ313
Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)
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2SK2013
2SJ313
SC-67
2-10R1B
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K2013
Abstract: JEITA SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 SC 0816
Text: 2SK2013 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2013 ○ 低周波電力増幅用 単位: mm : VDSS = 180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SJ313 とコンプリメンタリになります。
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2SK2013
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SC-67
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K2013
2002/95/EC)
K2013
JEITA SC-67
2-10R1B
2SJ313
2SK2013
2sk2013 2SJ313
SC 0816
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)
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2SJ313
2SK2013
SC-67
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2SJ313
Abstract: J313 2SK2013 Toshiba 2SJ
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)
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2SJ313
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Toshiba 2SJ
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toshiba marking code transistor
Abstract: 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)
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2SJ313
2SK2013
SC-67
2-10R1B
toshiba marking code transistor
2sk2013 2SJ313
2SJ313
J313
2SK2013
Toshiba 2SJ
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Audio Power Amplifier TOSHIBA
Abstract: 2SJ313 2SK2013 J313
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)
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2SJ313
2SK2013
SC-67
2-10R1B
Audio Power Amplifier TOSHIBA
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J313
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Untitled
Abstract: No abstract text available
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)
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2SJ313
2SK2013
SC-67
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2sk2013 2SJ313
Abstract: No abstract text available
Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Tc = 25°C)
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SK2013
Abstract: 2SJ313 2SK2013
Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313
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2SK2013
2SJ313
SK2013
2SK2013
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)
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2SK2013
2SJ313
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2sk2013 2SJ313
Abstract: 2SJ313 2SK2013
Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313
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2SK2013
2SJ313
2sk2013 2SJ313
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2SJ313
Abstract: 2SK2013 SC-65
Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313
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OCR Scan
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PDF
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2SK2013
2SJ313
2SK2013
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SJ313 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • 10 ì 0.3 High Breakdown Voltage : V D g g = —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013
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2SJ313
2SK2013
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2SJ313
Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013
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OCR Scan
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2SJ313
2SK2013
2SJ313
MARKING SG toshiba
transistor marking 4D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013
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2SJ313
2SK2013
--180V
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EH 14 A
Abstract: 2SJ313 2SK2013
Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013
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OCR Scan
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PDF
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2SJ313
2SK2013
EH 14 A
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transistor C1000 Toshiba
Abstract: 2SJ313 2SK2013 SV125
Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013
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OCR Scan
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PDF
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2SJ313
2SK2013
transistor C1000 Toshiba
2SJ313
2SK2013
SV125
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2sk2013
Abstract: No abstract text available
Text: TOSHIBA 2SK2013 2 S K2 0 1 3 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj}gg= 180V High Forward Transfer Admittance : |Yfg| = 0.7S Typ. Complementary to 2SJ313
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2SK2013
2SJ313
2sk2013
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