2SD880L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
|
2SD880
Abstract: 2sD880 TRANSISTOR 2SD880L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
2SD880G-AB3-R
2SD880L-TA3-T
2SD880G-TA3-T
OT-89
O-220
2sD880 TRANSISTOR
2SD880L
|
2SD880L
Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
Text: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
O-220
2SD880L
QW-R203-013
2SD880L
2sd880 equivalent
utc 2SD880L
2SB834
power transistor audio amplifier 500 watts
|
2SD880L
Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
2sd880 equivalent
2sd880 datasheet
013 transistor
2SB834
transistor 2sd880
hfe-300
utc 2SD880L
|
2sd880
Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
2SD880L
utc 2SD880L
2SD880, 1.5 power dissipation
transistor 2sd880
013 transistor
|
Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD880 NPN SILICON TRANSISTOR N PN EPI T AX I AL T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD880 is designed for audio frequency power amplifier applications. ̈ FEAT U RES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A)
|
Original
|
PDF
|
2SD880
2SD880
2SB834
2SD880L-TA3-T
2SD880G-TA3-T
O-220
QW-R203-013
|