2SD313
Abstract: transistor 2sd313 2sd313 applications 2sd313l QW-R203-001
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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2SD313
2SD313
2SD313L-x-TA3-T
2SD313G-x-TA3-T
2SD313L-x-TF3-T
2SD313G-x-TF3-T
O-220
O-220F
QW-R203-001
transistor 2sd313
2sd313 applications
2sd313l
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2sd313
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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2SD313
2SD313
2SD313L-x-TA3-T
2SD313G-x-TA3-T
2SD313L-x-TF3-T
2SD313G-x-TF3-T
O-220
O-220F
QW-R203-001
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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2SD313
2SD313
2SD313L-x-TA3-T
2SD313G-x-TA3-T
2SD313L-x-TF3-T
2SD313G-x-TF3-T
O-220
O-220F
QW-R203-001
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2sd313 equivalent
Abstract: 2SB507 2SD313 transistor 2sd313
Text: 2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)
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2SD313
O-220
2SB507
2sd313 equivalent
2SB507
2SD313
transistor 2sd313
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2SB507
Abstract: 2SD313 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
416W
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2SD313
Abstract: 2sd313 equivalent 2SB507 416W
Text: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SD313
O-220C
2SB507
2SD313
2sd313 equivalent
2SB507
416W
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2SB507
Abstract: 2SD313 to25W 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
to25W
416W
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TO220C
Abstract: 2SB507 2SD313
Text: JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING
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2SB507
O-220C
2SD313
O-220)
TO220C
2SB507
2SD313
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2sd313 equivalent
Abstract: 2SD313
Text: DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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2SD313
O-220AB
2sd313 equivalent
2SD313
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2SB507
Abstract: 2SD313
Text: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507
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O-220
2SD313
O-220
2SB507
200mA
500mA
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TRANSISTOR 2SB507
Abstract: 2SB507 2SD313
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313
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O-220
2SB507
O-220
2SD313
-200mA
-500mA
TRANSISTOR 2SB507
2SB507
2SD313
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Untitled
Abstract: No abstract text available
Text: 2SD313 Plastic-Encapsulate Transistors NPN TO-220 Features Power dissipation PCM: 1.75 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER
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2SD313
O-220
200mA
500mA
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2SB507
Abstract: 2sd313 equivalent 2SD313 TRANSISTOR 2SB507
Text: PNP 2SB507 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c)
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2SB507
O-220
2SD313
2SB507
2sd313 equivalent
2SD313
TRANSISTOR 2SB507
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507
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O-220
2SD313
O-220
2SB507
200mA
500mA
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2sd313 equivalent
Abstract: 2SD313
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 1.75 W (Tamb=25℃) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60
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O-220
2SD313
O-220
200mA
500mA
2sd313 equivalent
2SD313
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2SD330
Abstract: 2SB514 2SD313
Text: Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions • Especially suited for use in output stage of 10W AF Power amplifier. · Complementary pair with the 2SB514 and 2SD313.
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2SB514/2SD330
2SB514
2SD313.
2010C
2SB514/2SD330]
O-220AB
SC-46
2SB514
2SD330
2SD313
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2sd313 equivalent
Abstract: 2SD313 2sd313 applications 2SB507
Text: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SD313
O-220C
2SB507
2sd313 equivalent
2SD313
2sd313 applications
2SB507
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2SD313
Abstract: 2SB507 2sd313 equivalent 2SD313 E
Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE
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2SD313
2SB507
O-220
06-Feb-07
O-220
2SD313
2SB507
2sd313 equivalent
2SD313 E
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2SD811 TOSHIBA
Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Text: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213
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2SD228
2SD234
2SD235
2SC236
2SD237
2SD238
2SD241
2SD242
2SD243
2SD244
2SD811 TOSHIBA
2SC510
2SD2061
2SD877
RY 228
2SD2023
2SD1270
2SD880
2SC2120
2SD867
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2SD 388 A
Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
Text: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -
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2SD365A
2SD366
2SD366A
2SD367
2SD368
2SD369
2SD370
2SD371
2SD372
2SD373
2SD 388 A
2Sd427
2SD313
2SC2320
2SD650
2SC2073
2SD867
2SC2204
2sd1138
2SD2061
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2sj514
Abstract: 2SD330 2SB514 2SD313 J514 10WAF
Text: ["O rdering num ber: EN397E _ 2SB514/2SD330 PNP/NPN Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amp _ Applications Features •Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313
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EN397E
2SB514/2SD330
2SB514
2SD313
2sj514
2SD330
2SD313
J514
10WAF
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TRANSISTOR B507
Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Text: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.
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T-33-^
2SB507,
2SB507
2SB508
2SD313
2SD314
2SB508,
2SD314,
TRANSISTOR B507
TRANSISTOR d313
D313 amplifier
SD313
Sanyo D313
D313 VOLTAGE REGULATOR
D313 power amplifier
D313 for amplifier
power supply with regulator D313
2SC1175 transistor
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2SD330
Abstract: 2SB514 2SD313 EN397E sanyo D330 2SD 330
Text: Ordering num ber: EN397E 2SB514/2SD330 N 0.397E PNP/NPN Triple Diffused Planar Silicon Transistors SA\YO 50V/2A Low-Frequency Power Amp _ Applications Features • Especially suited for use in output stage of 10W AF Power amp • Complementary pair with the 2SB514 and 2SD313
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EN397E
2SB514/2SD330
2SB514
2SD313
2SB514
2SB514/2SD330
2SD330
7tn707b
2SD313
EN397E
sanyo D330
2SD 330
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