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Sanken Electric Co Ltd 2SD2016 TRANS NPN DARL 200V 3A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2016	Bulk	712		1	1 $2.3 10 $1.477 100 $2.3 1000 $0.80366 10000 $0.80366	Buy Now
Verical	2SD2016		1,000		78	1 - 10 - 100 $1.0533 1000 $0.9427 10000 $0.9427	Buy Now
	2SD2016		431		22	1 - 10 - 100 $1.005 1000 $0.9688 10000 $0.9688	Buy Now
	2SD2016		338		78	1 - 10 - 100 $1.0533 1000 $1.011 10000 $1.011	Buy Now
Quest Components	2SD2016		1,070			1 $2.368 10 $2.368 100 $2.368 1000 $0.9768 10000 $0.888	Buy Now
Chip1Stop	2SD2016	Bulk	431			1 $1.84 10 $1.18 100 $0.804 1000 $0.775 10000 $0.775	Buy Now
Sanken Electric Co Ltd 2SD2017 TRANS NPN DARL 250V 6A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2017	Bulk			1,000	1 - 10 - 100 - 1000 $0.96176 10000 $0.96176	Buy Now
Sanken Electric Co Ltd 2SD2014 TRANS NPN DARL 80V 4A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2014	Bulk			1,000	1 - 10 - 100 - 1000 $0.7269 10000 $0.7269	Buy Now
Sanken Electric Co Ltd 2SD2015 TRANS NPN DARL 120V 4A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2015	Bulk			1,000	1 - 10 - 100 - 1000 $0.73827 10000 $0.73827	Buy Now
Verical	2SD2015		780		76	1 - 10 - 100 $0.4 1000 $0.3888 10000 $0.3888	Buy Now
Quest Components	2SD2015		16			1 $1.4848 10 $1.366 100 $1.366 1000 $1.366 10000 $1.366	Buy Now
Chip1Stop	2SD2015	Bulk	780			1 - 10 $0.339 100 $0.318 1000 $0.309 10000 $0.309	Buy Now
Panasonic Electronic Components 2SD2018 TRANS NPN DARL 60V 1A TO126B-A1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2018	Bulk			1,000	1 - 10 - 100 - 1000 $0.24946 10000 $0.24946	Buy Now

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2SD201 Datasheets (80)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD201	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD201	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SD201	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD201	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD201	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SD201	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD201	Unknown	Cross Reference Datasheet	Scan	PDF
2SD201	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD201	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD201	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD201	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD201	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD201	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2010	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SD2010	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2010	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2010	ROHM	TO-92L, TO-92LS, MRT Transistors	Scan	PDF
2SD2010	ROHM	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE	Scan	PDF
2SD2011	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2011	Unknown	Transistor Substitution Data Book 1993	Scan	PDF

2SD201 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD2015 Abstract: No abstract text available Text: Product Specification www.jmnic.com 2SD2015 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・Driver for solenoid ・Relay and motor ・General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol	Original	PDF	2SD2015 O-220F O-220F) 2SD2015
2SD201 Abstract: 2SD201 0 Text: SavantIC Semiconductor Product Specification 2SD201 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING see Fig.2 PIN	Original	PDF	2SD201 2SD201 2SD201 0
2sb125 Abstract: relay 12v 3a datasheet 2SD2014 2SB1257 relay 12v 3a Solenoid Driver Darlington Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High DC Current Gain: hFE= 2000(Min)@IC= -3A ·Complement to Type 2SD2014 APPLICATIONS ·Driver for solenoid, relay and motor and general purpose	Original	PDF	2SD2014 -10mA, 2sb125 relay 12v 3a datasheet 2SD2014 2SB1257 relay 12v 3a Solenoid Driver Darlington
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	PDF	2SD2012
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	PDF	2SD2012
2SD2012 Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC)	Original	PDF	2SD2012 O-220F 2SD2012
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	PDF	2SD2012
Hitachi DSA002782 Abstract: 2sd2019 Text: 2SD2019 Silicon NPN Epitaxial ADE-208-919 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25°C) Item	Original	PDF	2SD2019 ADE-208-919 O-126 D-85622 Hitachi DSA002782 2sd2019
Untitled Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Micro Commercial Components 2SD2012 Features • • • • • • High DC Current Gain: hFE 1 =100 (Min.) Low Saturation Voltage: VCE(sat) =1.0V (Max.)	Original	PDF	2SD2012
2SD1769 Abstract: 2SA1568 2SC4064 2SC5370 Text: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)	Original	PDF	2SB1257 2SB1258 2SB1259 2SB1351 2SB1352 2SB1382 2SB1420 2SB1383 2SD1796 2SD2014 2SD1769 2SA1568 2SC4064 2SC5370
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2012 TO-220F TRANSISTOR NPN 1. BASE FEATURES z Audio Frequency Power Amplifier Applications z High DC Current Gain z Low Saturation Voltage z High Power Dissipation	Original	PDF	O-220F 2SD2012 O-220F
Untitled Abstract: No abstract text available Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	PDF	2SD2012
2SD2018 Abstract: sick nt Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features Parameter	Original	PDF	2002/95/EC) 2SD2018 2SD2018 sick nt
2sd2012 Abstract: No abstract text available Text: 2SD2012 NPN SILICON POWER TRANSISTOR • ■ ■ HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS ■ GENERAL PURPOSE SWITCHING ■ DESCRIPTION The 2SD2012 is a silicon NPN power transistor	Original	PDF	2SD2012 2SD2012 O-220F O-220F

2SD2018 Abstract: No abstract text available Text: Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Collector-base voltage Emitter open VCBO Collector-emitter voltage (Base open) VCEO	Original	PDF	2SD2018 2SD2018
transistor d2012 Abstract: d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012 Text: 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE 1 = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C)	Original	PDF	2SD2012 transistor d2012 d2012 transistor br d2012 d2012 AMPLIFIER 2SD2012 D2012 D2012 toshiba toshiba d2012
Untitled Abstract: No abstract text available Text: 2SD2012 TO SHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 High DC Current Gain : hpE l = 100 (Min.) Low Saturation Voltage : v CE(sat) = 1-ov (Max.) High Power Dissipation : P q = 25W (Tc = 25°C)	OCR Scan	PDF	2SD2012
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TY P E 2SD2012 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in . High DC Current Gain : 100 Min. 1Q3IIAX . Low Saturation Voltage 0 3 .2 ± Q 2 /- W' : VcE(sat)-l-0V(Max.)(Ic-2A, Ib =0.2A) . High Power Dissipation : Pc=25W (Tc=25°C)	OCR Scan	PDF	2SD2012 O-220
transistor 2sd2012 Abstract: 2sd2012 Text: 2SD2012 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2012 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hpE 1 - 100 (Min.) Low Saturation Voltage : v CE(sat) = I-0 v (Max.) High Power Dissipation : P c = 25 W (Tc = 25°C)	OCR Scan	PDF	2SD2012 transistor 2sd2012 2sd2012
Untitled Abstract: No abstract text available Text: SANKEN ELECTRIC CO LTD S5E D • 711074]. OOOlDlfl A 7 ci ISAKJ Silicon NPN Triple Diffused Planar 2SD2014 ☆ D a rlin g to n fi«*« T«np=Ta Application Example: »Outline Drawing 4- Electrical Characteristics Symbol 2SD2014 Unit VCBO 120 V VCEO 80 V V ebo	OCR Scan	PDF	2SD2014 10max 80min 3mA02 45x01 T0220)
Untitled Abstract: No abstract text available Text: SANKEN ELECTRIC SSE T> m 7 cJcJ07m 0001020 ll 57 CO L TD I SAKJ Silicon NPN Triple Diffused Planar ☆ D arlin gto n 2SD2016 • Outline Drawing 4 . .FM20 Application Example : General Purpose Electrical Characteristics Absolute Maximum Ratings	OCR Scan	PDF	2SD2016 10max 200min 1000min 45x01 T0220)
Untitled Abstract: No abstract text available Text: SSE D SANKEN ELECTRIC CO LT» • 7T1D741 DDD1011 70S H S A K J Silicon NPN Triple Diffused Planar ☆ Darlington 2SD2015 Absolute Maximum Ratings Application Example : Electrical Characteristics Ta=25°C S ym bol 2SD2015 Unit V cbo 150 V VCEO 120 V V ebo	OCR Scan	PDF	7T1D741 DDD1011 2SD2015 10max 120mm 45x01 T0220)
Untitled Abstract: No abstract text available Text: SANKEN ELECTRIC CO LTD SSE D I • 7n0?m ISAKJ GGOIOSI 3b3 Silicon NPN Triple Diffused Planar ☆Darlington 2SD2017 A pplication Example: e Outline Driver for Solenoid, Relay and M otor, and General Purpose Drawing 4 . . F M 2 0 Electrical Characteristics	OCR Scan	PDF	2SD2017 10Omax 10max 250min T0220)
2SB1333 Abstract: B1333 2SD2011 Text: h 7 > y ^ £ /Transistors 2 S B 1 333 2SB1333 #-u> h >mm Epitaxial Planar PNP Silicon Transistor (Darlington l& jp lM lli^ J iS 'tiffl/L o w Freq. Power Am p. V > h > f£ tx7 1) 2) hpE K r tj« 0 3) 'x — X • 1 5 •> 4) 2SD2011 t = l > 7 U 7 < f c £ o	OCR Scan	PDF	2SB1333 2SD2011 2SD2011. C/51V3 2SB1333 B1333

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2SD201 Datasheets (80)

2SD201 Datasheets Context Search

2SD2015

2SD201

2sb125

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2SD2012

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Hitachi DSA002782

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2SD1769

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2SD2018

2sd2012

2SD2018

transistor d2012

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transistor 2sd2012

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2SB1333