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    2SD1760 Search Results

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    2SD1760 Price and Stock

    ROHM Semiconductor 2SD1760TLQ

    TRANS NPN 50V 3A CPT3
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    Verical 2SD1760TLQ 14,866 33
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    Win Source Electronics 2SD1760TLQ 17,047
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    ROHM Semiconductor 2SD1760TLP

    TRANS NPN 50V 3A CPT3
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    ROHM Semiconductor 2SD1760TLR

    TRANS NPN 50V 3A CPT3
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    Quest Components 2SD1760TLR 79
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    ROHM Semiconductor 2SD1760

    TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
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    Quest Components 2SD1760 1,047
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    Fairchild Semiconductor Corporation 2SD1760

    TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
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    Quest Components 2SD1760 59
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    2SD1760 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1760 Kexin Medium Power Transistor Original PDF
    2SD1760 ROHM Power Transistor (50V, 3A) Original PDF
    2SD1760 ROHM Power Transistor Original PDF
    2SD1760 TY Semiconductor Medium Power Transistor - TO-252 Original PDF
    2SD1760 Various Russian Datasheets Transistor Original PDF
    2SD1760 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1760 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1760 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1760 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1760 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1760 ROHM Power Transistor (50V, 3A) Scan PDF
    2SD1760 ROHM CPT, TO-126, TO-126FP Transistors Scan PDF
    2SD1760 ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SD1760 ROHM Transistor Selection Guide Scan PDF
    2SD1760 ROHM CPT / TO-126 / TO-126FP Transistors Scan PDF
    2SD1760F5 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1760F5 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1760F5 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1760F5 ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SD1760Q ROHM Power Transistor (50V, 3A) Original PDF

    2SD1760 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1760 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 IC = 2A, IB = 0.2A . +0.28 1.50 -0.1


    Original
    PDF 2SD1760 O-252 -500mA, 30MHz

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


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    PDF 2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243

    2SD1760U

    Abstract: No abstract text available
    Text: ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current - DC


    Original
    PDF 2SD1760U OT-89 2SD1760U

    2sb1184

    Abstract: No abstract text available
    Text: 2SB1184 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF 2SB1184 O-251/TO-252-2L O-251 2SD1760 2SD1864. O-252-2L 30MHz

    2SD1760

    Abstract: 2SB1184 2SB1243 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1864 1.0±0.2 0.9 1.0 (3) 1.05 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V (1) Base (2) Collector (3) Emitter


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    PDF 2SD1760 2SD1864 100ms 100mm2 2SD1760 2SD1864) 2SB1184 2SB1243 2SD1864

    Untitled

    Abstract: No abstract text available
    Text: 2SD1760 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value


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    PDF O-251/TO-252-2L 2SD1760 O-251 2SB1184. O-252-2L 500mA 200mA 30MHz

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


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    PDF 2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn

    2SD1760

    Abstract: No abstract text available
    Text: Transistors SMD Type Medium Power Transistor 2SD1760 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 IC = 2A, IB = 0.2A . +0.28


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    PDF 2SD1760 O-252 Juncti25 -500mA, 30MHz 2SD1760

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1760 TRANSISTOR NPN TO-252 FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


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    PDF O-252-2 2SD1760 O-252 2SB1184. 500mA 200mA 500mA 30MHz

    2SD1760U

    Abstract: No abstract text available
    Text: ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current - DC


    Original
    PDF 2SD1760U OT-89 2SD1760U

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 !External dimensions (Units : mm) 2SD1760 2SD1864 1.0±0.2 Limits Unit VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 3 A (DC) 4.5 A (Pulse) IC 2SD1864


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    PDF 2SD1760 2SD1864 2SD1760 SC-63 65Max. 2SB1184 2SB1243 2SD1864

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Power Transistor 50V, 3A 2SD1760 / 2SD1864 Dimensions (Unit : mm) 0.9 0.65Max. 0.9 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 1.5 2.5 9.5±0.5 0.5±0.1 0.65±0.1 0.75 2.5±0.2 6.8±0.2 2.3 +0.2 −0.1 4.4±0.2 C0.5 0.9 Structure


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    PDF 2SD1760 2SD1864 65Max. 2SD1760 2SB1184 2SB1243. SC-63 R0039A 2SB1243 2SD1864

    Q2SD1760

    Abstract: 2SD1760 1.6562 21142 7704 2SD1760 spice
    Text: SPICE PARAMETER 2SD1760 by ROHM TR Div. * 2SD1760 NPN BJT model * Date: 2006/11/16 .MODEL 2SD1760 NPN + IS=1.2000E-12 + BF=91.918 + VAF=5.7704 + IKF=4.5333 + ISE=1.2000E-12 + NE=1.4873 + BR=344.81 + VAR=100 + IKR=81.827E-3 + ISC=1.4049E-9 + NC=1.6296 + RE=90.000E-3


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    PDF 2SD1760 Q2SD1760 2000E-12 827E-3 4049E-9 000E-3 065E-3 04E-12 2SD1760 1.6562 21142 7704 2SD1760 spice

    2SB1184

    Abstract: 2SD1760
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SD1760 TO-251 TO-252-2 TRANSISTOR NPN FEATURES z Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) z Complements the 2SB1184. 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF O-251/TO-252-2Plastic-Encapsulate 2SD1760 O-251 O-252-2 2SB1184. 500mA 200mA 500mA 30MHz 2SB1184 2SD1760

    transistor 2sb1184

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors 2SB1184 TO-251 TO-252-2 TRANSISTOR PNP FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 123 1. BASE


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    PDF O-251/TO-252-2Plastic-Encapsulate 2SB1184 O-251 O-252-2 2SD1760 2SD1864. 30MHz transistor 2sb1184 2SB1184 2SD1864

    TL-2000

    Abstract: No abstract text available
    Text: N "7 > y ' 7 $ / T ransistors 2 S D 1 7 6 2SD1760F5 F NPN y U 3 > h - 7 > v * 2 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. 5 • $WK>í'sÉH/D¡men8¡ons Unit : mm • 1) V c e (sat) J i3 0.5+ 0.I V C E ( s a t) = 0 .5 V ( T y p .) (IC / I b = 2 A / 0 .2 A )


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    PDF 2SD1760F5 SC-63 TL-2000

    d1760

    Abstract: 821 transistor
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    PDF 2SD1760F5 SC-63) D1760 2SB1184 2SD1760F5 821 transistor

    2SD1760F5

    Abstract: 2SB1184F5
    Text: K > i / 7. £ /Transistors 2 S D 1 7 6 2SD1760F5 F 5 Epitaxial Planar NPN Silicon Transistor féJià3Æ:fritltSfl!/L.ow Freq. Power Amp. • Ü H /D im ensions Unit : mm 1) V c e (sat) VcE(sat)= 0.5V(Typ) (lc/lB= 2A/0.2A) 2) 2SB1184F5 t □ > 7 ' J „ • Features


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    PDF 2SD1760F5 2SB1184F5 2SB1184F5. SC-63 2SD1760F5

    transistor b1184

    Abstract: b1184 transistor b1184 b1184 R 2SB1184F5
    Text: Transistor, PNP 2 S B 1 1 8 4 F 5 Features • available in CPT F5 SC-63 package • package marking: B1184*t), where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = -0.5 V for Iq/Ib = —2 A/—0.2 A • complementary pair with 2SD1760F5


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    PDF 2SB1184F5 SC-63) B1184 2SD1760F5 2SB1184F5 transistor b1184 b1184 transistor b1184 R

    2SB1243

    Abstract: 2SB1184 transistor 2SB1243 2SD1760 2SD1864 gd244
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor -60V, -3A 2SB1184/2SB1243 •Features •External dimensions (Units: mm) 1) LOW VcE(sat). VcEfsai) = -0.5V (Typ.) (Ic /Ib = -2A/-0.2A) 2) Complements the 2SD1760 /2SD1864. •Structure Epitaxial planar type


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    PDF 2SB1184 2SB1243 2SB1184/2SB1243 2SD1760 2SD1864. 2SB1184 SC-63 65Max. 2SB1184) 2SB1243 transistor 2SB1243 2SD1864 gd244

    2SD1760

    Abstract: No abstract text available
    Text: h "7 > V X $ /Transistors 2SD1760 2SD1760 X fcf$ * > T Jl^ y \s-1rffr NPN > V =l > h =7> v * $ Epitaxal Planar NPN Silicon Transistors 1ftJi}/£1t;fr*8lliffl/L o w Freq. Power Amp. • fl-fti^ fü ll/D im e n s io n s Uni» : mm 1) VcE(sat) V c E (s a t) = 0 .5 V ( T y p .)


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    PDF 2SD1760 2SD1760 2SB1184 2SB1184. 11Base -J91S 09LI-QS2

    2SD1762

    Abstract: 230S d1760 D1864
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type


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    PDF 2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864

    transistor B 1184

    Abstract: 2SD1762 b 1185
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) ^External dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic / I b = 2A/0.2A) 2) Com plem ents the 2S B 1184/2S B 1243/2S B 1185. • S tru c tu re Epitaxial planar type


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    PDF 2SD1760/2SD1864/2SD1762 1184/2S 1243/2S 96-214-D57) 2SD1760 2SD1864 2SD1762 transistor B 1184 b 1185

    transistor B502

    Abstract: 2SD1760 2SB11
    Text: Transistors Power Transistor 50V, 3A 2 S 1 7 6 0 / 2 S D D 1 8 6 4 / 2 S •F e a tu re s 1) 1 7 6 2 D •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b (Typ.) = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB 1185. 2SD1760


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    PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760