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    2SC607 Search Results

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    2SC607 Price and Stock

    Toshiba America Electronic Components 2SC6076(TE16L1,NV)

    TRANS NPN 80V 3A PW-MOLD
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    DigiKey 2SC6076(TE16L1,NV) Digi-Reel 2,490 1
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    2SC6076(TE16L1,NV) Cut Tape 2,490 1
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    2SC6076(TE16L1,NV) Reel 2,000 2,000
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    Mouser Electronics 2SC6076(TE16L1,NV) 3,415
    • 1 $0.68
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    Quest Components 2SC6076(TE16L1,NV) 1,600
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    Chip1Stop 2SC6076(TE16L1,NV) Cut Tape 11
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    2SC607 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC607 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC607 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC607 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC607 Unknown Cross Reference Datasheet Scan PDF
    2SC607 Unknown (2SC960 / 2SC959 / 2SC606 / 2SC607) PNP/NPN SILICON EPITAXIAL TRANSISTOR Scan PDF
    2SC607 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC607 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC607 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC6071 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Original PDF
    2SC6075 Toshiba Silicon NPN Epitaxial Type Original PDF
    2SC6076 Toshiba Silicon NPN Epitaxial Type (PCT Process) Original PDF
    2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 80V 3A PW MOLD Original PDF
    2SC6077 Toshiba Silicon NPN Epitaxial Type (PCT Process) Original PDF
    2SC6078 Toshiba Silicon NPN Epitaxial Type (PCT Process) Original PDF
    2SC6079 Toshiba Silicon NPN Epitaxial Type Original PDF

    2SC607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6079 2-7D101A

    Untitled

    Abstract: No abstract text available
    Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6075

    Untitled

    Abstract: No abstract text available
    Text: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)


    Original     		PDF 2SC6077 2-10T1A

    2SC6077

    Abstract: No abstract text available
    Text: 2SC6077 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6077 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC= 1 A) •


    Original     		PDF 2SC6077 2-10T1A 20070701-JA 2SC6077

    2SC6076

    Abstract: No abstract text available
    Text: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original     		PDF 2SC6076 2SC6076

    2SC6072

    Abstract: C6072
    Text: 2SC6072 東芝複合デバイス シリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm :fT=200MHz 標準 トランジション周波数が高い。 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC6072 200MHz( SC-67 2-10U1A 2SC6072 C6072

    Untitled

    Abstract: No abstract text available
    Text: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 s (typ.)


    Original     		PDF 2SC6076

    2SC6072

    Abstract: C6072
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic


    Original     		PDF 2SC6072 2SC6072 C6072

    2SC6076

    Abstract: IC602
    Text: 2SC6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。


    Original     		PDF 2SC6076 20070701-JA 2SC6076 IC602

    Untitled

    Abstract: No abstract text available
    Text: 2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6076 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 µs (typ)


    Original     		PDF 2SC6076

    C6078

    Abstract: No abstract text available
    Text: 2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6078 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 µs (typ)


    Original     		PDF 2SC6078 2-10T1A C6078

    Untitled

    Abstract: No abstract text available
    Text: 2SC6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。


    Original     		PDF 2SC6076

    2SC6075

    Abstract: No abstract text available
    Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6075 2SC6075

    2SC6072

    Abstract: C6072
    Text: 2SC6072 東芝複合デバイス シリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm :fT=200MHz 標準 トランジション周波数が高い。 絶対最大定格 (Tc = 25°C)


    Original     		PDF 2SC6072 200MHz( SC-67 2-10U1A 20070701-JA 2SC6072 C6072

    Untitled

    Abstract: No abstract text available
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic


    Original     		PDF 2SC6072 SC-67 2-10U1A

    2SC6072

    Abstract: No abstract text available
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic


    Original     		PDF 2SC6072 SC-67 2-10U1A 2SC6072

    C6076

    Abstract: 2SC6076 wd-c160
    Text: 2SC6076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6076 電力増幅用 電力スイッチング用 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) スイッチング時間が速い。


    Original     		PDF 2SC6076 C6076 2SC6076 wd-c160

    2SC6079

    Abstract: 2-7D101A
    Text: 2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE sat = 0.5 V (max)（IC = 1A） High-speed switching: tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6079 2SC6079 2-7D101A

    2SC6075

    Abstract: No abstract text available
    Text: 2SC6075 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6075 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC= 1 A) •


    Original     		PDF 2SC6075 20070701-JA 2SC6075

    C6078

    Abstract: 2SC6078
    Text: 2SC6078 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6078 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC= 1 A) •


    Original     		PDF 2SC6078 2-10T1A 20070701-JA C6078 2SC6078

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC6076 Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SC6076

    2SC6072

    Abstract: C6072
    Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC6072 SC-67 2-10U1A 2SC6072 C6072

    2SC6077

    Abstract: No abstract text available
    Text: 2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6077 ○ Power Amplifier Applications ○ Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 s (typ)


    Original     		PDF 2SC6077 2SC6077

    22406E

    Abstract: No abstract text available
    Text: 2SC6071 Ordering number : ENA0271 2SC6071 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance.


    Original     		PDF ENA0271 2SC6071 PW100 A0271-4/4 IT10663 IT10664 22406E