VHF-UHF Band Low Noise Amplifier
Abstract: 2SC5256F
Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2lel2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)
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2SC5256F
VHF-UHF Band Low Noise Amplifier
2SC5256F
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE R9 R f i F T Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain NF = 1.5dB f=2GHz ISoi J 2= 9.5dB (f = 2GHz) 1.2 ± 0.05 u .o = u.uo MAXIMUM RATINGS (Ta = 25°C)
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2SC5256FT
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transistor H1A
Abstract: 2SC5256
Text: TO SH IBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • Unit in mm 1.6 ± 0.2 : NF = 1.5dB f = 2GHz Low Noise Figure ,0.8 ±0.1, • High Gain : Gain = 8.5dB (f = 2GHz) in o O p tr>
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2SC5256
0024g
transistor H1A
2SC5256
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2SC5256FT
Abstract: No abstract text available
Text: TO SH IBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain 1.2 ±0 .0 5 : NF = 1.5dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) 0.8 ± 0.05
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2SC5256FT
0022g
2SC5256FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO
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2SC5256
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2SC5256FT
Abstract: VHF-UHF Band Low Noise Amplifier
Text: TOSHIBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2l e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5256FT
2SC5256FT
VHF-UHF Band Low Noise Amplifier
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transistor H1A
Abstract: 2SC5256 marking H1A h1a transistor
Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO
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2SC5256
transistor H1A
2SC5256
marking H1A
h1a transistor
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transistor H1A
Abstract: marking H1A 2SC5256 marking MK
Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO
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2SC5256
transistor H1A
marking H1A
2SC5256
marking MK
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO
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2SC5256
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transistor marking MK
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High. Gain : NF = 1.5dB f=2GHz : |S21el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5256F
S21el2=
20mAlease
transistor marking MK
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Untitled
Abstract: No abstract text available
Text: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L50AT
2SC5256
MT3S04AS
5256FT)
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN9C04FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C04FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES
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HN9C04FT
N9C04FT
2SC5256
2SC5091
CB--10V,
--20mA,
1000MHz
2000MHz
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Untitled
Abstract: No abstract text available
Text: HN9C15FT TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 R FT • ■ u m ■ MF ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6
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HN9C15FT
2SC5091
2SC5256
1000MHz
2000MHz
c2000MHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN9C02FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M Q f 17 F T • ■ ■ V V m m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins package : TU6
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HN9C02FT
2SC5256
2SC5086
2000MHz
1000M
500MHz
--20mA,
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2SC5256
Abstract: MT3S03AS MT3S03AT MT6L51AE
Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L51AE
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
2SC5256
MT3S03AS
MT3S03AT
MT6L51AE
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MT6L51AE
Abstract: 2SC5256 MT3S03AS MT3S03AT
Text: TO SH IBA MT6L51AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L 51 AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö in Oin ino 2V -O 11
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MT6L51AE
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
2SC5256
MT3S03AS
MT3S03AT
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Untitled
Abstract: No abstract text available
Text: MT6L51AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L51AT
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT6L50AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES
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MT6L50AE
2SC5256
MT3S04AS
5256FT)
MT3S04AT)
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN9C15FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C15FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES
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HN9C15FT
2SC5091
2SC5256
2000MHz
1000MHz
--20mA,
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SC5256
Abstract: MT3S03AS MT3S03AT MT6L51AT
Text: TO SH IBA MT6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L51AT
MT6L51
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
2SC5256
MT3S03AS
MT3S03AT
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2SC5256
Abstract: MT3S04AS MT3S04AT MT6L50AE
Text: TOSHIBA MT6L50AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö V -O 1 1 ir> IT) in O O o 2
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MT6L50AE
2SC5256
5256FT)
MT3S04AS
MT3S04AT)
2SC5256
MT3S04AS
MT3S04AT
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Untitled
Abstract: No abstract text available
Text: TO SH IBA M T6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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T6L51AT
MT6L51AT
2SC5256
MT3S03AS
5256FT)
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L51AE
MT6L51
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
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