Untitled
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
|
C5242 TOSHIBA
Abstract: c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
C5242 TOSHIBA
c5242
TOSHIBA C5242
Toshiba transistor c5242
transistor c5242
toshiba audio power amplifier
2SA1962
2SC5242
NPN Transistor 2sc5242
|
C5242 TOSHIBA
Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
2-16C1A
C5242 TOSHIBA
C5242
transistor c5242
TOSHIBA C5242
Toshiba transistor c5242
2sc5242 transistor
|
Untitled
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
|
c5242
Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
2-16C1A
c5242
C5242 TOSHIBA
transistor c5242
TOSHIBA c5242
|
C5242
Abstract: transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
C5242
transistor c5242
C5242 TOSHIBA
TOSHIBA C5242
NPN Transistor 2sc5242
Toshiba transistor c5242
2SA1962
2SC5242
2SA1962 TOSHIBA
|
2SC5242
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
|
Original
|
PDF
|
2SC5242
2SA1962
2SC5242
|
Audio Output Transistor Amplifier
Abstract: 80w audio 2SA1962 2SC5242
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications
|
Original
|
PDF
|
2SA1962
-230V
2SC5242
-50mA
-230V
Audio Output Transistor Amplifier
80w audio
2SA1962
2SC5242
|
NPN Transistor 2sc5242
Abstract: transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION •High Collector Breakdown Voltage: V BR CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications
|
Original
|
PDF
|
2SC5242
2SA1962
NPN Transistor 2sc5242
transistor 2sc5242
Audio Output Transistor Amplifier
2SC5242
2SC5242* datasheet
2SA1962
|
audio output TRANSISTOR PNP
Abstract: 2SA1962 2SC5242
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications
|
Original
|
PDF
|
2SA1962
-230V
2SC5242
-230V
audio output TRANSISTOR PNP
2SA1962
2SC5242
|
2SC5242
Abstract: 2SA1962 230V npn 1A
Text: SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity
|
Original
|
PDF
|
2SC5242
2SA1962
2SC5242
2SA1962
230V npn 1A
|
2sa1962
Abstract: 2SC5242
Text: SavantIC Semiconductor Product Specification 2SA1962 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio
|
Original
|
PDF
|
2SA1962
2SC5242
-230V
-230V;
2sa1962
2SC5242
|
2SA1962
Abstract: 2SC5242 transistors audio pnp power
Text: JMnic Product Specification 2SA1962 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5242 ・High collector voltage: VCEO=-230V(Min) APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio
|
Original
|
PDF
|
2SA1962
2SC5242
-230V
-230V;
2SA1962
2SC5242
transistors audio pnp power
|
Toshiba transistor A1962
Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
|
Original
|
PDF
|
2SA1962
2SC5242
Toshiba transistor A1962
a1962
transistor a1962
TOSHIBA A1962
a1962 TOSHIBA
2SA1962 TOSHIBA
2SA1962
2SC5242
|
|
|
transistor a1962
Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
|
Original
|
PDF
|
2SA1962
2SC5242
2-16C1A
transistor a1962
Toshiba transistor A1962
A1962
2SA1962 TOSHIBA
2SA1962
transistor 2sc5242
a1962 TOSHIBA
|
transistor a1962
Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
|
Original
|
PDF
|
2SA1962
2SC5242
transistor a1962
a1962
a1962 TOSHIBA
Toshiba transistor A1962
2Sa1962
2SA1962 TOSHIBA
TOSHIBA A1962
2SC5242
|
Toshiba transistor A1962
Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
|
Original
|
PDF
|
2SA1962
2SC5242
2-16C1A
Toshiba transistor A1962
a1962 TOSHIBA
A1962
TOSHIBA A1962
transistor a1962
2SA1962 TOSHIBA
360MAX
|
j4313
Abstract: j4313-o c5242 2sc5200 amplifier circuit
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.
|
Original
|
PDF
|
2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
j4313
j4313-o
c5242
2sc5200 amplifier circuit
|
j4313-o
Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.
|
Original
|
PDF
|
2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
FJPF5200
j4313-o
NPN Transistor 2sc5242
J4313
c5242o
J4313R
J4313O
c5242
C5242-O
2sc5242 transistor
2SC5242RTU
|
2SC5242
Abstract: 2SA1962 Toshiba 2SC5242
Text: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier
|
OCR Scan
|
PDF
|
2SC5242
2SA1962
2SC5242
2SA1962
Toshiba 2SC5242
|
2SA1962 TOSHIBA
Abstract: 2SA1962 2SC5242 I25L Toshiba 2SC5242
Text: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier
|
OCR Scan
|
PDF
|
2SC5242
2SA1962
2SA1962 TOSHIBA
2SA1962
2SC5242
I25L
Toshiba 2SC5242
|
NPN Transistor 2sc5242
Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier
|
OCR Scan
|
PDF
|
2SC5242
2SA1962
NPN Transistor 2sc5242
transistor 2sc5242
2SA1962
2SC5242
80W TRANSISTOR AUDIO AMPLIFIER
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X. • High Collector Breakdown Voltage : VCEO = 230V Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier
|
OCR Scan
|
PDF
|
2SC5242
2SA1962
|
NPN Transistor 2sc5242
Abstract: 2SC5242
Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5 .9 M A X . • • • 0 3 .2 ± 0.2 High Collector Breakdown Voltage : VCEO = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier
|
OCR Scan
|
PDF
|
2SC5242
2SA1962
2-16C1A
NPN Transistor 2sc5242
2SC5242
|
