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California Eastern Laboratories (CEL) 2SC5011-A RF TRANS NPN 12V 6.5GHZ SOT343
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DigiKey	2SC5011-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC5015-A RF TRANS NPN 6V 12GHZ SOT343
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DigiKey	2SC5015-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC5012-A RF TRANS NPN 10V 9GHZ SOT343
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DigiKey	2SC5012-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC5010-A RF TRANS NPN 6V 12GHZ SOT523
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DigiKey	2SC5010-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) 2SC5013-A RF TRANS NPN 10V 10GHZ SOT343
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DigiKey	2SC5013-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SC501 Datasheets (93)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC501	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC501	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC501	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC501	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC501	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC501	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC501	Unknown	Cross Reference Datasheet	Scan	PDF
2SC5010	NEC	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	Original	PDF
2SC5010	NEC	Semiconductor Selection Guide	Original	PDF
2SC5010	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SC5010	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC5010-A	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-523	Original	PDF
2SC5010FB	NEC	NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold	Original	PDF
2SC5010FB-T1	NEC	NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold	Original	PDF

2SC5010-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD	Original	PDF
2SC5010-T1-A	CEL	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR NPN SOT-523	Original	PDF
2SC5010-T1/-T2	NEC	NPN epitaxial-type silicon transistor	Original	PDF
2SC5010-T1_-T2	NEC	NPN epitaxial-type silicon transistor	Original	PDF
2SC5011	NEC	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD	Original	PDF
2SC5011	NEC	Semiconductor Selection Guide 1995	Original	PDF

2SC501 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC5010 Abstract: 2SC5435 2SC5435-T1 marking tk Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package	Original	PDF	2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk
nec 2401 831 Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and	Original	PDF	2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor
2SC5019 Abstract: No abstract text available Text: Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 4.5±0.1 • Features 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3˚ 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 2.5±0.1 ue pl d in	Original	PDF	2SC5019 2SC5019
2SC5012-T1 Abstract: transistor marking R37 ghz 2SC5012 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package	Original	PDF	2SC5012 2SC5012-T1 2SC5012-T1 transistor marking R37 ghz 2SC5012
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor	Original	PDF	PA862TD R09DS0032EJ0200 2SC5010, 2SC5801) 2SC5010 2SC5801
2SC5018 Abstract: No abstract text available Text: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO (0.5)	Original	PDF	2SC5018 2SC5018
nec 2412 Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702 Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1	Original	PDF	2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Untitled Abstract: No abstract text available Text: Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 M Di ain sc te on na tin nc ue e/ d • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO	Original	PDF	2SC5018
2SC5018 Abstract: No abstract text available Text: Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.2 ● 1.45 1.0 1.0 ● 4.0	Original	PDF	2SC5018 2SC5018
2SC5018 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5018 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in	Original	PDF	2002/95/EC) 2SC5018 2SC5018
2SC5801 Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801)	Original	PDF	PA862TD R09DS0032EJ0200 2SC5010, 2SC5801) S21e2 2SC5010 2SC5801 2SC5801
nec 2532 Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain	Original	PDF	2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Untitled Abstract: No abstract text available Text: Transistor 2SC5018 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 6.9±0.1 4.0 2.5±0.1 0.8 • Features 0.65 max. 14.5±0.5 (1.0) • High collector to base voltage VCBO • High emitter to base voltage VEBO	Original	PDF	2SC5018
Untitled Abstract: No abstract text available Text: Transistor 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 • Absolute Maximum Ratings * 0.4±0.04 3° 2.6±0.1 ● 0.4 max. ● Low noise figure NF. High gain. High transition frequency fT.	Original	PDF	2SC5019

Untitled Abstract: No abstract text available Text: Transistors 2SC5019 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 1.6±0.2 4.0+0.25 –0.20 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow	Original	PDF	2SC5019
CD 1691 CB Abstract: NEC 7924 NEC D 986 IC - 7434 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •	OCR Scan	PDF	2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from	OCR Scan	PDF	2SC5010
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	PDF	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1
transistor NEC B 617 Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and	OCR Scan	PDF	2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •	OCR Scan	PDF	2SC5015 2SC5015-T1 2SC5015-T2
3563 1231 Abstract: transistor NEC B 617 nec d 1590 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain	OCR Scan	PDF	2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590
LA 7693 Abstract: ic CD 4047 7737 transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain	OCR Scan	PDF	2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor
transistor NEC D 882 p Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain	OCR Scan	PDF	2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
TRANSISTOR GB 558 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	PDF	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

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2SC501 Search Results

2SC501 Price and Stock

California Eastern Laboratories (CEL) 2SC5011-A

California Eastern Laboratories (CEL) 2SC5015-A

California Eastern Laboratories (CEL) 2SC5012-A

California Eastern Laboratories (CEL) 2SC5010-A

California Eastern Laboratories (CEL) 2SC5013-A

2SC501 Datasheets (93)

2SC501 Datasheets Context Search

2SC5010

nec 2401 831

2SC5019

2SC5012-T1

Untitled

2SC5018

nec 2412

Untitled

2SC5018

2SC5018

2SC5801

nec 2532

Untitled

Untitled

Untitled

CD 1691 CB

Untitled

2SC5012-T1

transistor NEC B 617

Untitled

3563 1231

LA 7693

transistor NEC D 882 p

TRANSISTOR GB 558