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    ROHM Semiconductor 2SC4617TLQ

    TRANS NPN 50V 0.15A EMT3
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    2SC4617TLQ 5,285
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    ROHM Semiconductor 2SC4617TLR

    TRANS NPN 50V 0.15A EMT3
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    TME 2SC4617TLR 1
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    Ameya Holding Limited 2SC4617TLR 3,000 1
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    onsemi S2SC4617G

    TRANS NPN 50V 0.1A SC75 SOT416
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    DigiKey S2SC4617G Cut Tape 5,303 1
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    ROHM Semiconductor 2SC4672T100Q

    TRANS NPN 50V 2A MPT3
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    ROHM Semiconductor 2SC4617E3HZGTLQ

    TRANS NPN 50V 150MA EMT3
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    Mouser Electronics 2SC4617E3HZGTLQ 11,815
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    2SC46 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC46 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC46 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC46 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC46 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC46 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC46 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC46 Unknown Cross Reference Datasheet Scan PDF
    2SC46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC460 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SC460 Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 Scan PDF
    2SC460 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC460 Unknown Scan PDF
    2SC460 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC460 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC460 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2SC46 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original
    PDF 2SA1805 2SC4690 2-16F1A

    2SA1803

    Abstract: 2SC4688
    Text: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2


    Original
    PDF 2SA1803 2SC4688 2SA1803 2SC4688

    2SA1804

    Abstract: TO3PFM 2SC4689 Jmnic
    Text: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2


    Original
    PDF 2SA1804 2SC4689 -120V 2SA1804 TO3PFM 2SC4689 Jmnic

    2SA1804

    Abstract: 2SC4689
    Text: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN


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    PDF 2SC4689 2SA1804 2SA1804 2SC4689

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor 50V, 0.15A 2SA1774EB Applications General purpose small signal amplifier. Dimensions (Unit : mm) EMT3F Features 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 (1) 0.5 0.5 1.0 0.45 (3) 0.37 Structure


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    PDF 2SA1774EB 2SC4617EB. R0039A

    marking C5

    Abstract: No abstract text available
    Text: UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 MARKING 2 3 C5 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS


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    PDF 2SC4617 2SA1774 OT-523 QW-R221-010 marking C5

    2SA1774G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR „ 3 FEATURES 1 2 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 3 2 „ SOT-523 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


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    PDF 2SA1774 OT-23 2SC4617 OT-523 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R OT-23 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R OT-523 2SA1774G

    2SC4662

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SC4662 O-220F O-220F) 2SC4662

    2SC4667

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz typ. Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25


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    PDF 2SC4667 2SC4667

    npn smd 2a

    Abstract: 300V transistor npn 2a TRANSISTOR VCE 400V 500mA 2SC4616
    Text: Transistors SMD Type Silicon NPN Triple Diffused Type Transistor 2SC4616 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1


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    PDF 2SC4616 O-252 100mA 500mA npn smd 2a 300V transistor npn 2a TRANSISTOR VCE 400V 500mA 2SC4616

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.


    Original
    PDF 2SC4600 O-263 2SC4600-applied

    C4684

    Abstract: 2SC4684 IC-106 05A800
    Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


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    PDF 2SC4684 20070701-JA C4684 2SC4684 IC-106 05A800

    2SC4682

    Abstract: No abstract text available
    Text: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)


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    PDF 2SC4682 2SC4682

    2SC4666

    Abstract: No abstract text available
    Text: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)


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    PDF 2SC4666 2SC4666

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


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    PDF 2SC4688 ic 748 2SC4688

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING


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    PDF 2SA1805 2SC4690 --50m

    2SC4658

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A


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    PDF 2SC4658 2SA1794 Ta-25 2SC4658

    NPN VCEo 1000V

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4686/4686A TV D Y N A M I C F O C U S A P P L I C A T I O N S . U n i t in m m H IG H V O L T A G E S W I T C H I N G A P P L I C A T I O N S . 10±0.3 , H IG H V O L T A G E A M P L I F I E R A P P L I C A T I O N S .


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    PDF 2SC4686/4686A 2SC4686 2SC4686A NPN VCEo 1000V

    2SC3645

    Abstract: No abstract text available
    Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page


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    PDF 2SA1257 2SA1415 2SA1418 2SA1419 2SA1552 2SA1682 2SA1700 2SA1740 2SA1772 2SA1773 2SC3645

    2SC4645

    Abstract: 2SA1785
    Text: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)


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    PDF EN3511A 2SA1785/2SC4645 2SA1785 2SC4645

    2SC4679

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4679 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4679 HDTV CHROM A OUTPUT APPLICATIONS. U nit in mm VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY. ¿3.1 ±0.1 5.8 • High Transition Frequency : fp = 240MHz • Small Collector Output Capacitance


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    PDF 2SC4679 240MIIz

    3701A

    Abstract: 2SC4632
    Text: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.


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    PDF 2SC4632 3701A

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.


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    PDF 2SA1761 2SC4604. O-92MOD 100mA --75mA --10V,

    T44E

    Abstract: "RF Power Amplifiers" 2SC4624 N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEA TU R ES • High power gain : Goe S 4.7dB, Po S 45W


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    PDF 2SC4624 2SC4624 900MHz, 900MHz. 800-900MHz T-44E 900MHz T44E "RF Power Amplifiers" N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w