2SC2884 Search Results

2SC2884 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC2884	Kexin	Audio Frequency Amplifier Applications	Original	PDF
2SC2884	Toshiba	NPN Transistor	Original	PDF
2SC2884	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SC2884	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SC2884	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC2884	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC2884	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC2884	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC2884	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC2884	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC2884	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC2884	Toshiba	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF
2SC2884	Toshiba	Silicon NPN transistor for audio frequency amplifier applications. Suitable for output stages of 1 Watts amplifiers	Scan	PDF
2SC2884	Toshiba	SOT-89 Transistors	Scan	PDF

2SC2884-O	Toshiba	2SC2884 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC2884O	Toshiba	Silicon NPN Transistor	Scan	PDF
2SC2884OTE12L	Toshiba	2SC2884 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
2SC2884OTE12R	Toshiba	2SC2884 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
2SC2884TE12L	Toshiba	2SC2884 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
2SC2884TE12R	Toshiba	2SC2884 - TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF

2SC2884 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1204 Abstract: 2SC2884 Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)	Original	PDF	2SC2884 2SA1204 2SA1204 2SC2884
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage	Original	PDF	2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier	Original	PDF	OT-89-3L OT-89-3L 2SC2884 2SA1204 100mA 700mA 500mA
Untitled Abstract: No abstract text available Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)	Original	PDF	2SC2884 2SA1204 SC-62
2SA1204 Abstract: 2SC2884 Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	PDF	2SC2884 2SA1204 2SA1204 2SC2884
2SA1204 Abstract: power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol	Original	PDF	2SA1204 2SC2884 -10mA -100mA -700mA -500mA -20mA 2SA1204 power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2884 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage	Original	PDF	OT-89 2SC2884 OT-89 100mA 700mA 500mA,
2SA1204 Abstract: 2SC2884 Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	PDF	2SC2884 2SA1204 2SA1204 2SC2884
2SC2884 Abstract: No abstract text available Text: 2SC2884 0.8A, 35V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package Complementary to 2SA1204 High DC Current Gain 4 1 2 3 A CLASSIFICATION OF hFE	Original	PDF	2SC2884 OT-89 2SA1204 2SC2884-Y 2SC2884-O 13-Dec-2013 2SC2884
2SC2884 Abstract: No abstract text available Text: 2SC2884 2SC2884 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 0.8 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃	Original	PDF	2SC2884 OT-89 100mA 700mA 500mA, 2SC2884
2SA1204 Abstract: 2SC2884 Text: 2SC2884 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2884 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプの出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。	Original	PDF	2SC2884 2SA1204 SC-62 20070701-JA 2SA1204 2SC2884
2SC2884 Abstract: 2SA1204 Text: 2SC2884 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC2884 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプの出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。	Original	PDF	2SC2884 2SA1204 SC-62 2SC2884 2SA1204
BC184BP Abstract: na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 25 30 BC849B PTC121 BC223B 2SC21200 2SC28840 2SC27030 2SC27030 2SC22360 BC184K BC184KB ED1402C TED1702N BC183KA MPS9633 MPS9634 2SC941Y KSC1393 ~~g~~~4 35 40 2SC380TM-Y KSC1675 2SC394GR 2SC733Y ZTX109 2SC941TM-Y	Original	PDF	NA31XI NA31Y1 2N6112 NA31XY NA31YY BCl15 SWT1042 JE9101 BC184BP na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a
2SA1204 Abstract: 2SC2884 Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)	Original	PDF	2SC2884 2SA1204 2SA1204 2SC2884

power transistor audio amplifier 500 watts Abstract: 2SA1204 2SC2884 Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SC2884 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SA1204 Absolute Maximum Ratings Ta = 25 Parameter Symbol	Original	PDF	2SC2884 2SA1204 100mA 700mA 500mA power transistor audio amplifier 500 watts 2SA1204 2SC2884
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2884 z Small Flat Package z Audio Frequency Amplifier Application z High DC Current Gain	Original	PDF	OT-89-3L OT-89-3L 2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA
NPN Silicon Epitaxial Planar Transistor 700 v Abstract: No abstract text available Text: ST 2SC2884U NPN Silicon Epitaxial Planar Transistor for audio frequency amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO	Original	PDF	2SC2884U OT-89 NPN Silicon Epitaxial Planar Transistor 700 v
marking POJ Abstract: 2SA1204 2SC2884 Text: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)	OCR Scan	PDF	2SC2884 2SA1204 250mm2 marking POJ 2SA1204 2SC2884
MARKING e1v Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE 2SC2884 Unit in AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6 MAX. 4.6 M A X . a4¿ao5., 1.7 M A X. FEATURES: . High DC Current Gain : hpE= 1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . Pc= l ~ 2 W Mounted on Ceramic Substrate	OCR Scan	PDF	2SC2884 2SA1204 CL4-CL05 100mA 700mA 500mA MARKING e1v
Untitled Abstract: No abstract text available Text: TO SH IBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS 1.6 M A X. 4.6 M A X. High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)	OCR Scan	PDF	2SC2884 2SA1204
2SA1204 Abstract: 2SC2884 Text: TO SH IBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6 M A X. 4.6 M A X. High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)	OCR Scan	PDF	2SC2884 2SA1204 250mm2 2SA1204 2SC2884
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6MAX. High DC Current Gain : hpg = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)	OCR Scan	PDF	2SC2884 2SA1204
2SA1204 Abstract: 2SC2884 Text: T O S H IB A 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6MAX. High DC Current Gain : hpjr; = 100~320 Suitable for Output Stage of 1 Watts Amplifier P(} = 1~2W (Mounted on Ceramic Substrate)	OCR Scan	PDF	2SC2884 2SA1204 250mm2X0 250mm2 2SA1204 2SC2884
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm 1.6 M A X 4 .G M A X . High DC Current Gain : hpg = 100—320 UM AX 0-4 ± 0.05 IE Suitable for Output Stage of 1 Watts Amplifier	OCR Scan	PDF	2SC2884 2SA1204 --100mA 700mA 500mA, --10mA

Privacy Settings

2SC2884 Search Results

2SC2884 Datasheets (26)

2SC2884 Datasheets Context Search

2SA1204

Untitled

Untitled

Untitled

2SA1204

2SA1204

Untitled

2SA1204

2SC2884

2SC2884

2SA1204

2SC2884

BC184BP

2SA1204

power transistor audio amplifier 500 watts

Untitled

NPN Silicon Epitaxial Planar Transistor 700 v

marking POJ

MARKING e1v

Untitled

2SA1204

Untitled

2SA1204

Untitled