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    2SC1623 MARKING Search Results

    2SC1623 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    2SC1623 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1623

    Abstract: 2SC1623-L4
    Text: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA


    Original     		PDF 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23 2SC1623

    MARKING L5

    Abstract: 2SC1623
    Text: MCC 2SC1623-L5 TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23 MARKING L5 2SC1623

    2SC1623

    Abstract: No abstract text available
    Text: MCC 2SC1623-L5 TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23 2SC1623

    MARKING l7

    Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
    Text: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range


    Original     		PDF 2SC1623 OT-23-3L 100mA, MARKING l7 l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SC1623-L5 TM Micro Commercial Components 2SC1623-L6   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23

    marking L6

    Abstract: npn sot23 l6 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 marking L6 npn sot23 l6 2SC1623

    2SC1623

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 2SC1623

    2SC1623L6

    Abstract: 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 2SC1623L6 2SC1623

    npn sot23 l6

    Abstract: 2SC1623 marking 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 npn sot23 l6 2SC1623 marking 2SC1623

    2SC1623-L6

    Abstract: marking L6 2SC1623L7 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 2SC1623-L6 marking L6 2SC1623L7 2SC1623

    2SC1623 marking

    Abstract: 2SC1623
    Text: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V


    Original     		PDF 2SC1623-L6 2SC1623-L7 OT-23 2SC1623 marking 2SC1623

    2SA812

    Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
    Text: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF 2SA812 2SC1623 OT-23 -100mA -10mA 062in Width300uS 2SA812 m6 marking transistor sot-23 2SA812M6 2SA812-M6

    m6 marking transistor sot-23

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23

    2SA812M6

    Abstract: 2SA812 2SC1623
    Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage


    Original     		PDF 2SA812 2SC1623 -100mA -10mA 062in 300uS 2SA812 2SA812M6 2SC1623

    L6 TRANSISTOR

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 L6 TRANSISTOR

    2SA812

    Abstract: 2SC1623 2SA812M6
    Text: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage


    Original     		PDF 2SA812 2SC1623 -100mA -10mA 062in 300uS 2SA812 2SC1623 2SA812M6

    2SC1623

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: hFE = 200 TYP. in millimeters VCE = 6.0 V, IC = 1.0 mA 2.8 ± 0.2 0.4 +0.1 –0.05


    Original     		PDF 2SC1623 2SC1623

    2SC1623

    Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 2SC1623 L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC1623 100mA

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA

    NEC C11531E

    Abstract: 2SA812 2SC1623 C11531E C1984
    Text: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1


    Original     		PDF 2SA812 2SC1623 C11531E) NEC C11531E 2SA812 2SC1623 C11531E C1984

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


    Original     		PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: h p E = 200 TYP. VCE = 6 .0 V, lc - 1.0 mA in millimeters • High Voltage: V ceo = 50 V


    OCR Scan     		PDF 2SC1623 SC1623