sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc1695
Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125
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2SC1601
2SC1602
2SC1603
2SC1604
2SC1605
2SC1605A
2SC1606
2SC1607
2SC1608
2SC1609
2sc1695
2SC1694
2SC1693
2sc1696
2sc1700
2sa835
2sc1611
2SC1699
2SC1648
2SC1616
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2SD1615
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SD1615GM
Abstract: 2SB1115 2SC1615 2SD1615 2SD1615A
Text: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1615,
2SD1615A
2SB1115,
2SD1115A
2SD1615
2SD1615GM
2SB1115
2SC1615
2SD1615A
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2SB1115
Abstract: 2SC1615 2SD1615 2SD1615A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SB1115
Abstract: 2SC1615 2SD1615 2SD1615A
Text: DATA SHEET SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1615,
2SB1115,
2SB1115
2SC1615
2SD1615
2SD1615A
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5810A
Abstract: 2SD1615A 2SD1615 2SB1115 2SC1615 GP135
Text: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SD1615,
2SD1615A
2SB1115,
2SD1115A
2SD1615
5810A
2SD1615A
2SB1115
2SC1615
GP135
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c1615
Abstract: 2SC1615 ic 6802 2SC4036
Text: ROHM CO L T D MOE ' T A S A I T ! D Q Q 0 S b 3 fl h H R H M 2SC1615/2SC4036 h 7 > y ^ ^ / T ransistors “ T - 2 7 - Ö 7 H 2S C 1615 f i î È i è y L ^ - ^ N P N E I Î Œ ^ Œ iiÎ if f l/ H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors
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0Q05b3fl
2SC1615/2SC4036
27-Oy
2SC1615
2SC4036
T-27-07
c1615
2SC1615
ic 6802
2SC4036
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c1615
Abstract: No abstract text available
Text: /T ra n s is to rs 2SC 1615 2SC 4036 • 2SC1615/2SC4036 H S IÈ i[ 7 ° U -^ -^ N P N y V = l > b - 7 > y Z 2 Triple Diffused Planar N PN Silicon Transistors Ü6ÎJŒ ^i±ii,lliffl/H igh Voltage Amp. • ii-J f^ > i® /D iin e n s io n s Unit : mm « a
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2SC1615/2SC4036
2SC1615
2SC4036
c1615
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2SC1651
Abstract: 2SC1650 2SC1613 2SC1649 2SC1614 2SC1615 2SC164
Text: P h ysica l Dim ension • (Ta=25°C ) (Absolute M aximum R atings) il a ^¡Ls9 9 - ^ —X M !± Z IU 9 9 -J: = y 9 M I± H ^ "J 9 ’ /K ZH /9 9 M ÎÊ 2SC1615, 2SC1651 2SC1614, 2SC1650 2SC1613, 2SC1649 2SC1615, 2SC1651 2SC1614, 2SC1650 2SC1613, 2SC1649
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2SC1615,
2SC1651
2SC1614,
2SC1650
2SC1613,
2SC1649
2SC1650
2SC1613
2SC1649
2SC1614
2SC1615
2SC164
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2SC403S
Abstract: 2SC1615 2SC4036
Text: Taafl^ MQE D ROHM CO LTD Doosbaa b h r h m h 7 > y X ^ / T ransistors 2SC1615/2SC4036 T-17-öy H 2 S C 1 6 1 5 2 S C 4 3 f i ^ i è 7 0^ - ^ N P N y '; z i> h 7 > ^ X ^ ¡S îIJ Æ B S ii'fiÆ Ï/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors
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2SC1615/2SC4036
2SC1615
2SC403S
2SC4036
T-27-07
2SC403S
2SC1615
2SC4036
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Untitled
Abstract: No abstract text available
Text: / T ransistors 2SC1615 A O C Z 5 w 2SC1615/2SC4036 NPN v ' J 3 > i^ i i J E I± i iltiffl/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors 4 0 3 w • ÿj-fti^J'âHI/Dim ensions Unit : mm • < « 1)V cer=210V£® iiftEE7'< fc-50 2) =
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2SC1615/2SC4036
2SC1615
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2SC2673
Abstract: 2SD1661M IMD3 ROHM equivalent lcm3000 2SA937LN 2SA937MLN 2SB821 2SC2063 imb8 2SC3078M
Text: □ 1 ROHM CORP DE I V ñ E ñ ' m DDDllSt. 1 • FTR, ATR Types * New Producís A Maintenance part. |v • / • .Function "TV Tuner Mix Osc. Chroma FM RF Mix Osc. FM IF Local Osc. Conv. AM RF Local Osc. Conv. 19 19 50 2SC4045 11 50 *2SC3270M 300 100 ’
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2SC3080
2SC3080M
2SC4045
2SC3270M
2SC3079M
2SC2063
2SC2063M
2SC3078M
2SA937LN
2SC2673
2SD1661M
IMD3 ROHM equivalent
lcm3000
2SA937MLN
2SB821
imb8
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Untitled
Abstract: No abstract text available
Text: Transistors FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application | VCEO V *V CES * * V CER m . Part No. 2SA937ALN Low Noise - lc Max. (A) Pc (mW)
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2SA937ALN
2SB821
2SC1613A
2SC2021LN
2SA785
2SA937A
2SC2021
2SC4775
2SA874
2SA881
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2sd1469
Abstract: No abstract text available
Text: Transistors _ • j. « 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -
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2SB1276
2SC1613A
2SC4034
2SC2021LN
2sd1469
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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Untitled
Abstract: No abstract text available
Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor
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2SA937ALN
2SB821
2SC1613A
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2SA785
Abstract: 2SC2673 2SB821 2SA1561 2sa881 2sa790
Text: Tr T ransistors • Pin Inserting Transistors • FTR, FTL Types ir U n d e r D e v e lo p m e n t Type FTR 2SA937LN F u n c tio n FTL — 2SB821 2SB1276 2SC1613A 2SC4034 2SC2021LN 2SA785 L o w N o is e V c f„ V *Vcs.s ' ' V . ; -4 0 100 -4 0 -3 0 0 80
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2SB821
2SD1469
2SA806
2SC1615
2SA790
2SC1545
2SD2145
2SD2312
2SA785
2SC2673
2SB821
2SA1561
2sa881
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2SC2021LN
2SB821
2SB1276
2SC2021MLN
O-92L
O-92LS
2SB737
V2SD786
2SA1137
2SC1740
2SC1740 transistor
A1757
B1130AM
2SD2061F
2SD1466
2SC5083
B1236A
mos-fet darlington
2sc4721
transistor 2sa1819
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DG01D
Abstract: 82360 2SD1225
Text: ROHM COR? “ " TöD D | Medium Power Amplifiers b Vcbo Package Type Min. • PNP Transistors BVce O BVebo 'ÇBO @ V0B Min. Min. Max. RN5819 TO-92 EBC TO-92 (EBC) TO-92 (EBC) MPS4354 TO-92 (EBC) 60V 60V 5V 50nA 50V MPS4355 TO-92 (EBC) 60V 60V 5V 50nA 50V
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DG01D7E
T-27-01
100MHz
120MHz
135MHz
RN5815
RN5817
RN5819
100nA
DG01D
82360
2SD1225
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2SD2159
Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Text: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise
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2SA825S
2SA830S
2SA854S
2SA933AS
2SA933ASLN
2SA1198S
2SA1199S
2SA1515S
2SA1585S
2SC1645S
2SD2159
2SD2421
2SB1485
2SB1333
2sd2061
2sc2021qrs
2SD2172
2sD2388
DARLINGTON RF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2 S D 1 6 1 5 , 1 6 1 5 A a r e d e s ig n e d f o r a u d io f r e q u e n c y p o w e r a m p lif ie r a n d s w it c h in g a p p lic a t io n , e s p e c ia lly
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2SD1615,
2SD1615A
2SD1615
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2SC1583
Abstract: 2SC1594 2SC1592 2sc1567 2SC1595 2SC1515K 2SC1516K 2SC1517AK 2SC1645 2SC1545
Text: - 106 - m £ JE JÉ VCBO HV SW IC DC (V) (V) 2SC1515K (Ta=25t3,*EP(áTc=25,C ) u (A) D i « ^ D * i v.-. 1V.DU (W) (W) (max) (/¿A) 200 150 0.05 0.2 Vc b (V) m (min) m (max) ft tt VcE (V) (Ta=25°C) OEPÍátypíÜ] (max) (V) I c/ I e (A) (V) le (A) 0.1 20
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01liTc
2SC1515K
2SC1516K
2SC1517AK
2SC1518
2SC1545
2SC1545M
2SC1560
30dBm
2SC1594
2SC1583
2SC1594
2SC1592
2sc1567
2SC1595
2SC1645
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