2SC1096A
Abstract: 2SC2497A 2SA1096 2SC2497
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C
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PDF
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2002/95/EC)
2SC2497,
2SC2497A
2SA1096,
2SC1096A
O-126B
2SC2497
2SC1096A
2SC2497A
2SA1096
2SC2497
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2SC2497
Abstract: 2SC1096A 2SC2497A 2SA1096
Text: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open
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Original
|
PDF
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2SC2497,
2SC2497A
2SA1096,
2SC1096A
2SC2497
O-126B
2SC2497
2SC1096A
2SC2497A
2SA1096
|
2SC2497A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
2SC2497,
2SC2497A
2SA1096,
2SC1096A
O-126B
2SC2497
2SC2497A
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
2SC2497,
2SC2497A
2SA1096,
2SC1096A
2SC2497
|